Measurement of thermal conductivity of silicon dioxide thin films using a 3ω method
Abstract
The thermal conductivity of SiO2 thin films prepared using various procedures has been studied using a 3ω method. The thermal conductivity of SiO2 thin films of above approximately 500 nm thickness decreases as the porosity of the specimen, which is determined by infrared absorption spectroscopy, increases. Below approximately 250 nm thickness, the observed thermal conductivity of the SiO2 thin films systematically decreases as a function of film thickness. The data have been analyzed based on a SiO2-thickness-independent thermal conductivity and interfacial resistance. The total estimated interfacial resistance between the metal strip and the film, and between the film and the substrate is about 2×10−8 m2 KW−1.
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For SiO2, fitting phase-lag versus modulation frequency data over the entire frequency range to a constant thermal conductivity yields 1.4 ± 0.2 W m−1 K−1, which agrees with bulk values and has a low mean square error of 0.04.
“For SiO 2 , this fit yields a thermal conductivity of 1.4 ± 0.2 W m À 1 K À 1 , which agrees with bulk values 24 and has a low mean square error (MSE ¼ 0.04).”
From Broadband phonon mean free path contributions to thermal conductivity measured using frequency domain thermoreflectance (2013) · cites this paper as [24]
The frequency-independent data for SiO2 is consistent with measurements of SiO2 thin films where no thermal conductivity reduction from bulk due to boundary scattering was observed.
“This frequencyindependent data is consistent with measurements of SiO 2 thin films where there was no observed thermal conductivity reduction from bulk due to boundary scattering 24,31 .”
From Broadband phonon mean free path contributions to thermal conductivity measured using frequency domain thermoreflectance (2013) · cites this paper as [24]
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Zhang, Y., He, Y., Zhu, Q., Guo, X., Qiu, C., Su, Y., & Soref, R. A. (2018) · Optics Letters · doi:10.1364/ol.43.004518 · Cited by 36 · see citing works
Thermal conductivity measurement of amorphous Si/SiGe multilayer films by 3 omega method
Shen, B., Zeng, Z., Lin, C., & Hu, Z. (2012) · International Journal of Thermal Sciences · doi:10.1016/j.ijthermalsci.2012.10.022 · Cited by 34 · see citing works
Tuning thermal conductance across sintered silicon interface by local nanostructures
Sakata, M., Hori, T., Oyake, T., Maire, J. K., Nomura, M., & Shiomi, J. (2015) · Nano Energy · doi:10.1016/j.nanoen.2015.03.038 · Cited by 34 · see citing works
A single-mask thermal displacement sensor in MEMS
Krijnen, B., Hogervorst, R. P., van Dijk, J. W., Engelen, J. B. C., Woldering, L. A., Brouwer, D. M., Abelmann, L., & Soemers, H. M. J. R. (2011) · Journal of Micromechanics and Microengineering · doi:10.1088/0960-1317/21/7/074007 · Cited by 33 · see citing works
Su, J., Liu, X., Charmchi, M., & Sun, H. (2016) · International Journal of Heat and Mass Transfer · doi:10.1016/j.ijheatmasstransfer.2016.02.023 · Cited by 33 · see citing works
Integrated Optical Modulator Based on Transition between Photonic Bands
Gövdeli, A., Sarihan, M. C., Karaca, U., & Kocaman, S. (2018) · Scientific Reports · doi:10.1038/s41598-018-20097-7 · Cited by 33 · see citing works
Huang, S., Ruan, X., Zou, J. T., Fu, X., & Yang, H. (2009) · Microsystem Technologies · doi:10.1007/s00542-009-0824-3 · Cited by 32 · see citing works
General bidirectional thermal characterization via the 3ω technique
Bauer, M. L., & Norris, P. M. (2014) · Review of Scientific Instruments · doi:10.1063/1.4884638 · Cited by 32 · see citing works
Thermal microscopy of electronic materials
Heiderhoff, R., Makris, A., & Riedl, T. (2015) · Materials Science in Semiconductor Processing · doi:10.1016/j.mssp.2015.12.014 · Cited by 32 · see citing works
Fan, A., Hu, Y., Ma, W., Wang, H., & Zhang, X. (2019) · Journal of Thermal Science · doi:10.1007/s11630-019-1084-x · Cited by 32 · see citing works
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Reduced self-heating by strained silicon substrate engineering
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Precise Thermal Characterization of Confined Nanocrystalline Silicon by a 3ω Method
Kihara, T., HARADA, T., & Koshida, N. (2005) · Japanese Journal of Applied Physics · doi:10.1143/jjap.44.4084 · Cited by 31 · see citing works
Optimisation of modulation period of TiO2/Al reactive multilayer films for laser-driven flyer plates
Guo, W., Wu, L., Ningxi, 孟. M., Chen, Y., Ma, Z., Zhou, X., Zhang, W., Shen, R., & Ye, Y. (2018) · Chemical Engineering Journal · doi:10.1016/j.cej.2018.10.175 · Cited by 31 · see citing works
Thermal conductivity and interfacial effect of parylene C thin film using the 3-omega method
Guermoudi, A. A., Cresson, P. Y., Ouldabbes, A., Boussatour, G., & Lasri, T. (2020) · Journal of Thermal Analysis and Calorimetry · doi:10.1007/s10973-020-09612-z · Cited by 31 · see citing works
Thermal phenomena in nanoscale transistors
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- Authors
- Yamane, T., Nagai, N., Katayama, S.-I., & Todoki, M.
- Affiliations
- Toray Research Center, Inc. (Japan) (JP)
- ORCID
- Nagai, Naoto
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2002-06-15
- Volume
- 91
- Issue
- 12
- Pages
- 9772-9776
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2052807145
- Cited by
- 367
- References
- 16
- Citations by year
- 2026: 10 · 2025: 15 · 2024: 10 · 2023: 18 · 2022: 17 · 2021: 14 · 2020: 30 · 2019: 26 · 2018: 24 · 2017: 22 · 2016: 15 · 2015: 23 · 2014: 25 · 2013: 19 · 2012: 19
- FWCI
- 3.04
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Journal of Applied Physics (publishedVersion)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Thermal properties of materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › 3D IC and TSV technologies
- Physical Sciences › Engineering › Mechanics of Materials › Thermography and Photoacoustic Techniques
- Keywords
- thermal conductivity, SiO2 thin films, 3ω method, porosity, film thickness dependence, interfacial thermal resistance, metal/film interface, film-substrate interface, infrared absorption spectroscopy
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