Thermal boundary conductance across metal-gallium nitride interfaces from 80 to 450 K
Abstract
Thermal boundary conductance is of critical importance to gallium nitride (GaN)-based device performance. While the GaN-substrate interface has been well studied, insufficient attention has been paid to the metal contacts in the device. In this work, we measure the thermal boundary conductance across interfaces of Au, Al, and Au-Ti contact layers and GaN. We show that in these basic systems, metal-GaN interfaces can impose a thermal resistance similar to that of GaN-substrate interfaces. We also show that these thermal resistances decrease with increasing operating temperature and can be greatly affected by inclusion of a thin adhesion layers.
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TDTR has been frequently used to measure the heat capacity of new materials and the thermal conductance of various solid/solid interfaces.
“The heat capacity of new materials 38, 39 and thermal conductance of various solid/solid interfaces 40-47 have also been frequently measured using TDTR.”
From Tutorial: Time-domain thermoreflectance (TDTR) for thermal property characterization of bulk and thin film materials (2018) · cites this paper as [42]
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- Authors
- Donovan, B. F., Szwejkowski, C. J., Duda, J. C., Cheaito, R., Gaskins, J. T., Peter Yang, C.-Y., Constantin, C., Jones, R. E., & Hopkins, P. E.
- Affiliations
- University of Virginia (US)
- Sandia National Laboratories 3 , Livermore, California 94550, USA
- James Madison University (US)
- Sandia National Laboratories California (US)
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2014-11-17
- Volume
- 105
- Issue
- 20
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1999128555
- Cited by
- 72
- References
- 38
- Citations by year
- 2026: 6 · 2025: 11 · 2024: 8 · 2023: 7 · 2022: 6 · 2021: 5 · 2020: 7 · 2019: 7 · 2018: 5 · 2017: 2 · 2016: 5 · 2015: 3
- FWCI
- 1.51
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Applied Physics Letters (publishedVersion)
- Funders
- Commonwealth Research Commercialization Fund of Virginia
- National Science Foundation
- Air Force Office of Scientific Research
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Thermal properties of materials
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Keywords
- thermal boundary conductance, gallium nitride, thermal resistance, gold contacts, adhesion layer, temperature dependence, GaN-based devices
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