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Cited by 388

The DOI matches its Crossref record; 27 of the 27 references it cites were found in a registry or an index.

III-V/Si hybrid photonic devices by direct fusion bonding

Open access
Tanabe, Katsuaki, Watanabe, Katsuyuki, Arakawa, Yasuhiko·2012·Scientific Reports

Abstract

Monolithic integration of III-V compound semiconductors on silicon is highly sought after for high-speed, low-power-consumption silicon photonics and low-cost, light-weight photovoltaics. Here we present a GaAs/Si direct fusion bonding technique to provide highly conductive and transparent heterojunctions by heterointerfacial band engineering in relation to doping concentrations. Metal- and oxide-free GaAs/Si ohmic heterojunctions have been formed at 300°C; sufficiently low to inhibit active material degradation. We have demonstrated 1.3 μm InAs/GaAs quantum dot lasers on Si substrates with the lowest threshold current density of any laser on Si to date, and AlGaAs/Si dual-junction solar cells, by p-GaAs/p-Si and p-GaAs/n-Si bonding, respectively. Our direct semiconductor bonding technique opens up a new pathway for realizing ultrahigh efficiency multijunction solar cells with ideal bandgap combinations that are free from lattice-match restrictions required in conventional heteroepitaxy, as well as enabling the creation of novel high performance and practical optoelectronic devices by III-V/Si hybrid integration.

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Metadata

Authors
Tanabe, K., Watanabe, K., & Arakawa, Y.
Venue
Scientific Reports
Published
2012-04-02
Volume
2
Issue
1
Pages
349-349
ISSN
2045-2322 (ISSN-L)
OpenAlex
W2052940294
Cited by
388
References
27
FWCI
19.74
Type
journal article
Language
en
Open access
gold

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CoChat. (2026). Citation check: III-V/Si hybrid photonic devices by direct fusion bonding. https://app.cochat.ai/papers/10.1038/srep00349
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Tanabe, K., Watanabe, K., & Arakawa, Y. (2012). III-V/Si hybrid photonic devices by direct fusion bonding. Scientific Reports. https://doi.org/10.1038/srep00349

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