The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
About the deformation of ferroelectric hystereses
Abstract
Studying ferroelectric hafnium oxide with focus on memory applications for the past years, discussions frequently involved the shape of measured polarization hystereses, its relation to the device performance, and how to optimize it. A perfect model-like hysteresis is of nearly rectangular shape and all deviations from this situation have to have a certain physical origin. Different phenomena and their impact on the shape of the polarization hystereses were reported in literature: Aging, imprint, fatigue, or dielectric interface layers to name a few examples. A collection of these phenomena is not easily found up to now. Thus, filling or at least reducing this gap is one of the goals of this work. Moreover, observing a pinched, slanted, or displaced hysteresis, it is quite tempting to try the reverse approach: a derivation of potential structural origins for this curve shape. First, the basics of the dynamic hysteresis measurement and the ferroelectric memories are briefly reviewed. The figures of interest are derived to ensure a proper assessment of imperfections in the hysteresis shape and their influence. It is discussed how a closer look on the polarization loop helps to draw conclusions on what might have caused such a shape or at least how to rule out some phenomena if the expected indications are not reflected in the present curve. Of course, further structural or electrical studies, as they are exemplarily pointed out, are indispensable to find the root cause(s) for the deviations from the ideal hysteresis. But sophisticated methods are not always accessible straightaway and, moreover, a pointer on where to start is always helpful. Especially, the transient currents recorded during a dynamic hysteresis measurement are stressed as a valuable instrument for this purpose. Despite their known potential, these currents are seldom shown in literature.
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Citations
Cites
Electric field cycling behavior of ferroelectric hafnium oxide
Schenk, T., Schroeder, U., Pešić, M., Popovici, M., Pershin, Y. V., & Mikolajick, T. (2014) · ACS Applied Materials & Interfaces · doi:10.1021/am504837r · Cited by 197
Self-citation
Cited by
Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
Pešić, M., Fengler, F. P. G., Larcher, L., Padovani, A., Schenk, T., Grimley, E. D., Sang, X., LeBeau, J. M., Slesazeck, S., Schroeder, U., et al. (2016) · Advanced Functional Materials · doi:10.1002/adfm.201600590 · Cited by 964
Self-citationReview and perspective on ferroelectric HfO2-based thin films for memory applications
Park, M. H., Lee, Y. H., Mikolajick, T., Schroeder, U., & Hwang, C. S. (2018) · MRS Communications · doi:10.1557/mrc.2018.175 · Cited by 579
Self-citationComplex Internal Bias Fields in Ferroelectric Hafnium Oxide
Schenk, T., Hoffmann, M., Ocker, J., Pešić, M., Mikolajick, T., & Schroeder, U. (2015) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.5b05773 · Cited by 280
Self-citationDoped Hf0.5Zr0.5O2 for high efficiency integrated supercapacitors
Lomenzo, P. D., Chung, C.-C., Zhou, C., Jones, J. L., & Nishida, T. (2017) · Applied Physics Letters · doi:10.1063/1.4985297 · Cited by 117
Metadata
- Authors
- Schenk, T., Yurchuk, E., Mueller, S., Schroeder, U., Starschich, S., Böttger, U., & Mikolajick, T.
- Venue
- Applied Physics Reviews
- Publisher
- AIP Publishing
- Published
- 2014-12
- Volume
- 1
- Issue
- 4
- Pages
- 041103
- ISSN
- 1931-9401 (ISSN-L)
- OpenAlex
- W1994461405
- Cited by
- 204
- References
- 1
- FWCI
- 6.54
- Type
- journal article
- Language
- en
- Open access
- closed
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