The DOI matches its Crossref record; 29 of the 29 references it cites were found in a registry or an index.
A hybrid nanomemristor/transistor logic circuit capable of self-programming
Open accessAbstract
Memristor crossbars were fabricated at 40 nm half-pitch, using nanoimprint lithography on the same substrate with Si metal-oxide-semiconductor field effect transistor (MOS FET) arrays to form fully integrated hybrid memory resistor (memristor)/transistor circuits. The digitally configured memristor crossbars were used to perform logic functions, to serve as a routing fabric for interconnecting the FETs and as the target for storing information. As an illustrative demonstration, the compound Boolean logic operation (A AND B) OR (C AND D) was performed with kilohertz frequency inputs, using resistor-based logic in a memristor crossbar with FET inverter/amplifier outputs. By routing the output signal of a logic operation back onto a target memristor inside the array, the crossbar was conditionally configured by setting the state of a nonvolatile switch. Such conditional programming illuminates the way for a variety of self-programmed logic arrays, and for electronic synaptic computing.
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“They can also be used to implement digital logic [9], synapses in neural applications [10,11], and hybrid circuits [6,12].”
From Sub-nanosecond switching of a tantalum oxide memristor (2011) · cites this paper as [12]
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Cites
Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,828
Self-citationMemristor—The Missing Circuit Element
Chua, L. (1971) · IEEE Transactions on Circuit Theory · doi:10.1109/tct.1971.1083337 · Cited by 10,268 · cited 4×
“Memristance is very interesting for a variety of digital and analog switching applications (1, 2), especially because a memristor does not lose its state when the electrical power is turned off (the memory is nonvolatile).”
BackgroundInfluentialConductance of a Molecular Junction
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Memristive switching mechanism for metal/oxide/metal nanodevices
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Self-citationMemristive devices and systems
Chua, L. O., & Kang, S. M. (1976) · Proceedings of the IEEE · doi:10.1109/proc.1976.10092 · Cited by 2,604
Imprint Lithography with 25-Nanometer Resolution
Chou, S. Y., Krauss, P. R., & Renstrom, P. J. (1996) · Science · doi:10.1126/science.272.5258.85 · Cited by 2,288
Logic Gates and Computation from Assembled Nanowire Building Blocks
Huang, Y., Duan, X., Cui, Y., Lauhon, L. J., Kim, K.-H., & Lieber, C. M. (2001) · Science · doi:10.1126/science.1066192 · Cited by 2,125
Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing
Rueckes, T., Kim, K., Joselevich, E., Tseng, G. Y., Cheung, C. L., & Lieber, C. M. (2000) · Science · doi:10.1126/science.289.5476.94 · Cited by 1,716
Electronically Configurable Molecular-Based Logic Gates
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Self-citationConductance Switching in Single Molecules Through Conformational Changes
Donhauser, Z. J., Mantooth, B. A., Kelly, K. F., Bumm, L. A., Monnell, J. D., Stapleton, J. J., Price, D. W. J., Rawlett, A. M., Allara, D. L., Tour, J. M., et al. (2001) · Science · doi:10.1126/science.1060294 · Cited by 1,246
Cited by
Sorted by citations
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
Jo, S. H., Chang, T., Ebong, I., Bhadviya, B. B., Mazumder, P., & Lu, W. (2010) · Nano Letters · doi:10.1021/nl904092h · Cited by 4,174
The future of electronics based on memristive systems
Zidan, M. A., Strachan, J. P., & Lu, W. D. (2018) · Nature Electronics · doi:10.1038/s41928-017-0006-8 · Cited by 2,138
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Borghetti, J., Snider, G. S., Kuekes, P. J., Yang, J. J., Stewart, D. R., & Williams, R. S. (2010) · Nature · doi:10.1038/nature08940 · Cited by 1,929
Self-citationExperimental demonstration of associative memory with memristive neural networks
Pershin, Y. V., & Di Ventra, M. (2010) · Neural Networks · doi:10.1016/j.neunet.2010.05.001 · Cited by 1,041
Kim, K.-H., Gaba, S., Wheeler, D., Cruz-Albrecht, J. M., Hussain, T., Srinivasa, N., & Lu, W. (2012) · Nano Letters · doi:10.1021/nl203687n · Cited by 924
Metadata
- Authors
- Borghetti, J., Li, Z., Straznicky, J., Li, X., Ohlberg, D. A. A., Wu, W., Stewart, D. R., & Williams, R. S.
- Affiliations
- Hewlett-Packard (United States) (US)
- Venue
- Proceedings of the National Academy of Sciences
- Publisher
- National Academy of Sciences
- Published
- 2009-02-10
- Volume
- 106
- Issue
- 6
- Pages
- 1699-1703
- ISSN
- 0027-8424 (ISSN-L)
- 1091-6490
- PMC
- PMC2631082
- OpenAlex
- W2064632620
- Cited by
- 270
- References
- 29
- Citations by year
- 2026: 3 · 2025: 3 · 2024: 8 · 2023: 6 · 2022: 5 · 2021: 11 · 2020: 13 · 2019: 16 · 2018: 18 · 2017: 21 · 2016: 11 · 2015: 23 · 2014: 18 · 2013: 26 · 2012: 21
- FWCI
- 22.98
- Type
- journal article
- Language
- en
- Open access
- green
- www.ncbi.nlm.nih.gov
- Locations
- Proceedings of the National Academy of Sciences (publishedVersion)
- PubMed Central (publishedVersion)
- PubMed (publishedVersion)
- Funders
- Defense Advanced Research Projects Agency
- Advanced Research Projects Agency
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
- Keywords
- memristor crossbar, Boolean circuits, nanoimprint lithography, nonvolatile switching
- MeSH terms
- Computers, Transistors, Electronic, Nanotechnology
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