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A hybrid nanomemristor/transistor logic circuit capable of self-programming
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Memristor crossbars were fabricated at 40 nm half-pitch, using nanoimprint lithography on the same substrate with Si metal-oxide-semiconductor field effect transistor (MOS FET) arrays to form fully integrated hybrid memory resistor (memristor)/transistor circuits. The digitally configured memristor crossbars were used to perform logic functions, to serve as a routing fabric for interconnecting the FETs and as the target for storing information. As an illustrative demonstration, the compound Boolean logic operation (A AND B) OR (C AND D) was performed with kilohertz frequency inputs, using resistor-based logic in a memristor crossbar with FET inverter/amplifier outputs. By routing the output signal of a logic operation back onto a target memristor inside the array, the crossbar was conditionally configured by setting the state of a nonvolatile switch. Such conditional programming illuminates the way for a variety of self-programmed logic arrays, and for electronic synaptic computing.
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“They can also be used to implement digital logic [9], synapses in neural applications [10,11], and hybrid circuits [6,12].”
From Sub-nanosecond switching of a tantalum oxide memristor (2011) · cites this paper as [12]
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Prodromakis, T., Michelakis, K., & Toumazou, C. (2010) · Electronics Letters · doi:10.1049/el.2010.2716 · Cited by 39
Compact Circuit Model and Hardware Emulation for Floating Memristor Devices
Shin, S., Zheng, L., Weickhardt, G., Cho, S.-I., & Kang, S.-M. S. (2013) · IEEE Circuits and Systems Magazine · doi:10.1109/mcas.2013.2256259 · Cited by 38
Electric currents in networks of interconnected memristors
Oskoee, E. N., & Sahimi, M. (2011) · Physical Review E · doi:10.1103/physreve.83.031105 · Cited by 38
Flexible Three‐Dimensional Organic Field‐Effect Transistors Fabricated by an Imprinting Technique
Nakahara, R., Uno, M. O., Uemura, T., Takimiya, K., & Takeya, J. (2012) · Advanced Materials · doi:10.1002/adma.201201234 · Cited by 39
Khan, M. U., Hassan, G., Raza, M. A., Bae, J., & Kobayashi, N. P. (2019) · Journal of Materials Science Materials in Electronics · doi:10.1007/s10854-019-00753-y · Cited by 38
Wang, C., Ling, Z., & Wu, R. (2017) · Journal of Circuits Systems and Computers · doi:10.1142/s021812661850038x · Cited by 36
Instar and outstar learning with memristive nanodevices
Snider, G. S. (2010) · Nanotechnology · doi:10.1088/0957-4484/22/1/015201 · Cited by 35
Programmable Resistive-Switch Nanowire Transistor Logic Circuits
Shim, W., Yao, J., & Lieber, C. M. (2014) · Nano Letters · doi:10.1021/nl502654f · Cited by 34
Mem-fractive properties of mushrooms
Beasley, A. E., Abdelouahab, M.-S., Lozi, R., Tsompanas, M., Powell, A. L., & Adamatzky, A. (2021) · Bioinspiration & Biomimetics · doi:10.1088/1748-3190/ac2e0c · Cited by 36
Metadata
- Authors
- Borghetti, J., Li, Z., Straznicky, J., Li, X., Ohlberg, D. A. A., Wu, W., Stewart, D. R., & Williams, R. S.
- Affiliations
- Hewlett-Packard (United States) (US)
- Venue
- Proceedings of the National Academy of Sciences
- Publisher
- National Academy of Sciences
- Published
- 2009-02-10
- Volume
- 106
- Issue
- 6
- Pages
- 1699-1703
- ISSN
- 0027-8424 (ISSN-L)
- 1091-6490
- PMC
- PMC2631082
- OpenAlex
- W2064632620
- Cited by
- 270
- References
- 29
- Citations by year
- 2026: 3 · 2025: 3 · 2024: 8 · 2023: 6 · 2022: 5 · 2021: 11 · 2020: 13 · 2019: 16 · 2018: 18 · 2017: 21 · 2016: 11 · 2015: 23 · 2014: 18 · 2013: 26 · 2012: 21
- FWCI
- 22.98
- Type
- journal article
- Language
- en
- Open access
- green
- www.ncbi.nlm.nih.gov
- Locations
- Proceedings of the National Academy of Sciences (publishedVersion)
- PubMed Central (publishedVersion)
- PubMed (publishedVersion)
- Funders
- Defense Advanced Research Projects Agency
- Advanced Research Projects Agency
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
- Keywords
- memristor crossbar, Boolean circuits, nanoimprint lithography, nonvolatile switching
- MeSH terms
- Computers, Transistors, Electronic, Nanotechnology
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Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
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