The DOI matches its Crossref record; 6 of the 6 references it cites were found in a registry or an index.
The evolution of electronic structure in few-layer graphene revealed by optical spectroscopy
Open accessAbstract
The massless Dirac spectrum of electrons in single-layer graphene has been thoroughly studied both theoretically and experimentally. Although a subject of considerable theoretical interest, experimental investigations of the richer electronic structure of few-layer graphene (FLG) have been limited. Here we examine FLG graphene crystals with Bernal stacking of layer thicknesses N = 1,2,3,…8 prepared using the mechanical exfoliation technique. For each layer thickness N , infrared conductivity measurements over the spectral range of 0.2–1.0 eV have been performed and reveal a distinctive band structure, with different conductivity peaks present below 0.5 eV and a relatively flat spectrum at higher photon energies. The principal transitions exhibit a systematic energy-scaling behavior with N . These observations are explained within a unified zone-folding scheme that generates the electronic states for all FLG materials from that of the bulk 3D graphite crystal through imposition of appropriate boundary conditions. Using the Kubo formula, we find that the complete infrared conductivity spectra for the different FLG crystals can be reproduced reasonably well within the framework a tight-binding model.
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Cites
The electronic properties of graphene
Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S., & Geim, A. K. (2009) · Reviews of Modern Physics · doi:10.1103/revmodphys.81.109 · Cited by 24,803
Graphene: Status and Prospects
Geim, A. K. (2009) · Science · doi:10.1126/science.1158877 · Cited by 13,942
Fine Structure Constant Defines Visual Transparency of Graphene
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Landau-Level Degeneracy and Quantum Hall Effect in a Graphite Bilayer
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Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
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Asymmetry gap in the electronic band structure of bilayer graphene
McCann, E. (2006) · Physical Review B · doi:10.1103/physrevb.74.161403 · Cited by 1,275
Cited by
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
Mak, K. F., Lee, C., Hone, J., Shan, J., & Heinz, T. F. (2010) · Physical Review Letters · doi:10.1103/physrevlett.105.136805 · Cited by 15,586
Self-citationTopological valley transport at bilayer graphene domain walls
Ju, L., Shi, Z., Nair, N., Lv, Y., Jin, C., Velasco, J., Ojeda-Aristizabal, C., Bechtel, H. A., Martin, M. C., Zettl, A., et al. (2015) · Nature · doi:10.1038/nature14364 · Cited by 680
Optical absorption in twisted bilayer graphene
Moon, P., & Koshino, M. (2013) · Physical Review B · doi:10.1103/physrevb.87.205404 · Cited by 493
Dual-gated bilayer graphene hot-electron bolometer
Yan, J., Kim, M.-H., Elle, J. A., Sushkov, A. B., Jenkins, G. S., Milchberg, H. M., Fuhrer, M. S., & Drew, H. D. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.88 · Cited by 488
Tight-binding model and direct-gap/indirect-gap transition in single-layer and multilayer MoS2
Cappelluti, E., Roldán, R., Silva-Guillén, J. A., Ordejón, P., & Guinea, F. (2013) · Physical Review B · doi:10.1103/physrevb.88.075409 · Cited by 431
Metadata
- Authors
- Mak, K. F., Sfeir, M. Y., Misewich, J. A., & Heinz, T. F.
- Venue
- Proceedings of the National Academy of Sciences
- Published
- 2010-08-09
- Volume
- 107
- Issue
- 34
- Pages
- 14999-15004
- ISSN
- 0027-8424 (ISSN-L)
- 1091-6490
- OpenAlex
- W1994637197
- Cited by
- 235
- References
- 6
- FWCI
- 8.96
- Type
- journal article
- Language
- en
- Open access
- green
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