The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Valley Chern numbers and boundary modes in gapped bilayer graphene
Open accessAbstract
Electronic states at domain walls in bilayer graphene are studied by analyzing their four- and two-band continuum models, by performing numerical calculations on the lattice, and by using quantum geometric arguments. The continuum theories explain the distinct electronic properties of boundary modes localized near domain walls formed by interlayer electric field reversal, by interlayer stacking reversal, and by simultaneous reversal of both quantities. Boundary mode properties are related to topological transitions and gap closures, which occur in the bulk Hamiltonian parameter space. The important role played by intervalley coupling effects not directly captured by the continuum model is addressed using lattice calculations for specific domain wall structures.
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Cites
Landau-Level Degeneracy and Quantum Hall Effect in a Graphite Bilayer
McCann, E., & Fal’ko, V. I. (2006) · Physical Review Letters · doi:10.1103/physrevlett.96.086805 · Cited by 2,060
Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
Castro, E. V., Novoselov, K. S., Morozov, S. V., Peres, N. M. R., dos Santos, J. M. B. L., Nilsson, J., Guinea, F., Geim, A. K., & Neto, A. H. C. (2007) · Physical Review Letters · doi:10.1103/physrevlett.99.216802 · Cited by 2,033 · cited 1×
“∓ ffiffiffiffiffiffiffiffi 1∓ξ q eið1−μÞνφ 1 CCCCCCCA ; [5] + V”
Cited by
Observation of topological valley transport of sound in sonic crystals
Lu, J., Qiu, C., Ye, L., Fan, X., Ke, M., Zhang, F., & Liu, Z. (2017) · Nature Physics · doi:10.1038/nphys3999 · Cited by 985
Self-citationTopological valley transport at bilayer graphene domain walls
Ju, L., Shi, Z., Nair, N., Lv, Y., Jin, C., Velasco, J., Ojeda-Aristizabal, C., Bechtel, H. A., Martin, M. C., Zettl, A., et al. (2015) · Nature · doi:10.1038/nature14364 · Cited by 680
Topologically protected refraction of robust kink states in valley photonic crystals
Gao, F., Xue, H., Yang, Z., Lai, K., Yu, Y., Lin, X., Chong, Y., Shvets, G., & Zhang, B. (2018) · Nature Physics · doi:10.1038/nphys4304 · Cited by 576
Direct observation of valley-polarized topological edge states in designer surface plasmon crystals
Wu, X., Meng, Y., Tian, J., Huang, Y., Xiang, H., Han, D., & Wen, W. (2017) · Nature Communications · doi:10.1038/s41467-017-01515-2 · Cited by 449
On-chip valley topological materials for elastic wave manipulation
Yan, M., Lu, J., Li, F., Deng, W., Huang, X., Ma, J., & Liu, Z. (2018) · Nature Materials · doi:10.1038/s41563-018-0191-5 · Cited by 443
Metadata
- Authors
- Zhang, F., MacDonald, A. H., & Mele, E. J.
- Venue
- Proceedings of the National Academy of Sciences
- Published
- 2013-06-10
- Volume
- 110
- Issue
- 26
- Pages
- 10546-10551
- ISSN
- 0027-8424 (ISSN-L)
- 1091-6490
- OpenAlex
- W2118368638
- Cited by
- 412
- References
- 2
- FWCI
- 8.22
- Type
- journal article
- Language
- en
- Open access
- green
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