The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
Basic principles of STT-MRAM cell operation in memory arrays
Abstract
For reliable operation, individual cells of an STT-MRAM memory array must meet specific requirements on their performance. In this work we review some of these requirements and discuss the fundamental physical principles of STT-MRAM operation, covering the range from device level to chip array performance, and methodology for its development.
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Citations
Cites
Thermal Fluctuations of a Single-Domain Particle
Brown, W. F. (1963) · Physical Review · doi:10.1103/physrev.130.1677 · Cited by 3,374
Yoda, H., Kishi, T., Nagase, T., Yoshikawa, M., Nishiyama, K., Kitagawa, E., Daibou, T., Amano, M., Shimomura, N., Takahashi, S., et al. (2010) · Current Applied Physics · doi:10.1016/j.cap.2009.12.021 · Cited by 179
Spin-transfer switching in MgO-based magnetic tunnel junctions (invited)
Diao, Z., Pakala, M., Panchula, A., Ding, Y., Apalkov, D., Wang, L.-C., Chen, E., & Huai, Y. (2006) · Journal of Applied Physics · doi:10.1063/1.2165169 · Cited by 51
Self-citation
Cited by
Memory devices and applications for in-memory computing
Sebastian, A., Le Gallo, M., Khaddam-Aljameh, R., & Eleftheriou, E. (2020) · Nature Nanotechnology · doi:10.1038/s41565-020-0655-z · Cited by 2,289
A review of emerging non-volatile memory (NVM) technologies and applications
Chen, A. (2016) · Solid-State Electronics · doi:10.1016/j.sse.2016.07.006 · Cited by 668
Locatelli, N., Cros, V., & Grollier, J. (2014) · Nature Materials · doi:10.1038/nmat3823 · Cited by 649
SpinDrop: Dropout-Based Bayesian Binary Neural Networks With Spintronic Implementation
Ahmed, S. T., Danouchi, K., Münch, C., Prenat, G., Anghel, L., & Tahoori, M. B. (2023) · IEEE Journal on Emerging and Selected Topics in Circuits and Systems · doi:10.1109/jetcas.2023.3242146 · Cited by 25
Metadata
- Authors
- Khvalkovskiy, A. V., Apalkov, D., Watts, S., Chepulskii, R., Beach, R. S., Ong, A., Tang, X., Driskill-Smith, A., Butler, W. H., Visscher, P. B., Lottis, D., Chen, E., Nikitin, V, & Krounbi, M.
- Venue
- Journal of Physics D: Applied Physics
- Publisher
- IOP Publishing
- Published
- 2013-02-01
- Volume
- 46
- Issue
- 7
- Pages
- 074001
- ISSN
- 0022-3727 (ISSN-L)
- 1361-6463
- OpenAlex
- W2112388836
- Cited by
- 556
- References
- 3
- FWCI
- 19.70
- Type
- journal article
- Language
- en
- Open access
- closed
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- Khvalkovskiy, A. V., Apalkov, D., Watts, S., Chepulskii, R., Beach, R. S., Ong, A., Tang, X., Driskill-Smith, A., Butler, W. H., Visscher, P. B., Lottis, D., Chen, E., Nikitin, V, & Krounbi, M. (2013). Basic principles of STT-MRAM cell operation in memory arrays. Journal of Physics D: Applied Physics. https://doi.org/10.1088/0022-3727/46/7/074001
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