Industrially microfabricated ion trap with 1 eV trap depth
Open accessAbstract
Scaling trapped-ion quantum computing will require robust trapping of at least hundreds of ions over long periods, while increasing the complexity and functionality of the trap itself. Symmetric three-dimensional (3D) structures enable high trap depth, but microfabrication techniques are generally better suited to planar structures that produce less ideal conditions for trapping. We present an ion trap fabricated on stacked eight-inch wafers in a large-scale micro-electro-mechanical system microfabrication process that provides reproducible traps at a large volume. Electrodes are patterned on the surfaces of two opposing wafers bonded to a spacer, forming a 3D structure with 2.5 μ m standard deviation in alignment across the stack. We implement a design achieving a trap depth of 1 eV for a 40 Ca+ ion held at 200 μ m from either electrode plane. We characterize traps, achieving measurement agreement with simulations to within ±5% for mode frequencies spanning 0.6–3.8 MHz, and evaluate stray electric field across multiple trapping sites. We measure motional heating rates over an extensive range of trap frequencies, and temperatures, observing 40 phonons/s at 1 MHz and 185 K. This fabrication method provides a highly scalable approach for producing a new generation of 3D ion traps.
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The use of advanced standard fabrication methods such as CMOS is facilitated, compared with rf traps, by the lack of high-voltage rf signals.
“The use of advanced standard fabrication methods such as CMOS56,57 is facilitated, compared with rf traps, by the lack of high-voltage rf signals.”
From Penning micro-trap for quantum computing (2024) · cites this paper as [57]
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Self-citationToward scalable ion traps for quantum information processing
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A high-fidelity quantum matter-link between ion-trap microchip modules
Akhtar, M., Bonus, F., Lebrun-Gallagher, F. R., Johnson, N. I., Siegele-Brown, M., Hong, S., Hile, S. J., Kulmiya, S. A., Weidt, S., & Hensinger, W. K. (2023) · Nature Communications · doi:10.1038/s41467-022-35285-3 · Cited by 59 · see citing works
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Penning micro-trap for quantum computing
Jain, S., Sägesser, T., Hrmo, P., Torkzaban, C., Stadler, M., Oswald, R., Axline, C., Bautista-Salvador, A., Ospelkaus, C., Kienzler, D., et al. (2024) · Nature · doi:10.1038/s41586-024-07111-x · Cited by 33 · see citing works
“We note that the coherence”
Self-citation
- Authors
- Auchter, S., Axline, C., Decaroli, C., Valentini, M., Purwin, L., Oswald, R., Matt, R., Aschauer, E., Colombe, Y., Holz, P., Monz, T., Blatt, R., Schindler, P., Rössler, C., & Home, J.
- Affiliations
- Universität Innsbruck (AT)
- ETH Zurich (CH)
- Infineon Technologies (Austria) (AT)
- Alpine Quantum Technologies (Austria) (AT)
- Austrian Academy of Sciences (AT)
- Corresponding author
- Auchter, S
- Axline, C
- ORCID
- Venue
- Quantum Science and Technology
- Publisher
- IOP Publishing
- Published
- 2022-05-31
- Volume
- 7
- Issue
- 3
- Pages
- 035015
- ISSN
- 2058-9565 (ISSN-L)
- OpenAlex
- W4221151752
- Cited by
- 23
- References
- 11
- Citations by year
- 2026: 4 · 2025: 5 · 2024: 6 · 2023: 7 · 2022: 1
- FWCI
- 1.56
- Type
- journal article
- Language
- en
- Open access
- hybrid
- doi.org
- Licence
- Locations
- Quantum Science and Technology (publishedVersion, cc-by)
- arXiv (Cornell University) (submittedVersion)
- Repository for Publications and Research Data (ETH Zurich) (submittedVersion, cc-by)
- arXiv (Cornell University)
- ETH Zürich Research Collection
- Funders
- H2020 Future and Emerging Technologies (801285)
- Topics
- Physical Sciences › Computer Science › Artificial Intelligence › Quantum Information and Cryptography
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Cold Atom Physics and Bose-Einstein Condensates
- Physical Sciences › Computer Science › Artificial Intelligence › Quantum Computing Algorithms and Architecture
- Keywords
- ion trap, trapped-ion quantum computing, microfabrication, MEMS, three-dimensional electrodes, trap depth, 40Ca+ ions, motional heating, stray electric fields, mode frequencies, wafer bonding, scalability
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