Large electronic-density increase on cooling a layered metal: DopedBi2Te3
Abstract
We have carried out optical and transport measurements of the free carriers and optical measurements of states above the semiconducting energy gap in the layered crystal ${\mathrm{Bi}}_{2}$${\mathrm{Te}}_{3}$. We find that cooling causes a substantial amount of spectral weight to condense from the above-gap states into the metallic states.
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The system is likely significantly delayed in achieving equilibrium by local lattice or charge density fluctuations such as may arise from site defects, which are prominent in such materials.
“The system is likely to be significantly delayed in achieving equilibrium by local lattice or charge density fluctuations such as may arise from site defects, which are prominent in such materials [8,26].”
From Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi2Te3 and Sb2Te3 (2009) · cites this paper as [26]
The size of the indirect band gap of Bi2Te3 is greater than 150 meV, as measured using tunneling and optical techniques.
“This is consistent with the size of the indirect band gap ( > 150 meV ) measured using tunneling [26] and optical techniques [27].”
From Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi2Te3 and Sb2Te3 (2009) · cites this paper as [26]
The time dependence of the Bi2Te3 surface Dirac node binding energy is attributed to downward band bending near the surface caused by breaking of interquintuple layer van der Waals Te(1)-Te(1) bonds, creating a net electric field upon crystal termination.
“Such behavior has been attributed to a downward band bending near the surface [Fig. 3(b)] that is caused by the breaking of interquintuple layer van der Waals Te ð 1 Þ -Te ð 1 Þ bonds [Fig. 3(a)], which creates a net electric field near the surface upon crystal termination [25,26].”
From Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi2Te3 and Sb2Te3 (2009) · cites this paper as [26]
Cites
Herman, F., Skillman, S., & ARENTS, J. (1964) · Journal of The Electrochemical Society · doi:10.1149/1.2426131 · Cited by 3,997 · see citing works
Charge-density waves and superlattices in the metallic layered transition metal dichalcogenides
Wilson, J. A., Salvo, F. J. D., & Mahajan, S. (1975) · Advances In Physics · doi:10.1080/00018737500101391 · Cited by 2,242 · see citing works
Electronic Processes in Noncrystalline Materials
Street, R. A. (1973) · Physics Bulletin · doi:10.1088/0031-9112/24/5/033 · Cited by 1,563 · see citing works
Richter, W., & Becker, C. R. (1977) · physica status solidi (b) · doi:10.1002/pssb.2220840226 · Cited by 597 · see citing works
The crystal structure of Bi2Te3−xSex
Nakajima, S. (1963) · Journal of Physics and Chemistry of Solids · doi:10.1016/0022-3697(63)90207-5 · Cited by 540 · see citing works
Electrical and Thermal Properties of Bi 2 Te 3
Satterthwaite, C. B., & Ure, R. W. (1957) · Physical Review · doi:10.1103/physrev.108.1164 · Cited by 465 · see citing works
Electron-Phonon Effects in the Infrared Properties of Metals
Allen, P. B. (1971) · Physical review. B, Solid state · doi:10.1103/physrevb.3.305 · Cited by 448 · see citing works
Comprehensive analysis of Si-doped AlxGa1−xAs ( x=0 to 1 ): Theory and experiments
Chand, N., Henderson, T., Klem, J. F., Masselink, W. T., Fischer, R., Chang, Y., & Morkoç, H. (1984) · Physical review. B, Condensed matter · doi:10.1103/physrevb.30.4481 · Cited by 410 · see citing works
Ba2YCu3O7−δ : Electrodynamics of Crystals with High Reflectivity
Thomas, G. A., Orenstein, J., Rapkine, D. H., Capizzi, M., Millis, A. J., Bhatt, R. N., Schneemeyer, L. F., & Waszczak, J. V. (1988) · Physical Review Letters · doi:10.1103/physrevlett.61.1313 · Cited by 394 · see citing works
Self-citationFrequency- and temperature-dependent conductivity in YBa2 Cu3 O6+x crystals
Orenstein, J., Thomas, G. A., Millis, A. J., Cooper, S. L., Rapkine, D. H., Timusk, T., Schneemeyer, L. F., & Waszczak, J. V. (1990) · Physical review. B, Condensed matter · doi:10.1103/physrevb.42.6342 · Cited by 394 · see citing works
Self-citationIn a clean high- Tc superconductor you do not see the gap
Kamarás, K., Herr, S. L., Porter, C. D., Tache, N., Tanner, D. B., Etemad, S., Venkatesan, T., Chase, E. W., Inam, A., Wu, X. D., et al. (1990) · Physical Review Letters · doi:10.1103/physrevlett.64.84 · Cited by 364 · see citing works
Linear augmented-plane-wave calculation of the structural properties of bulk Cr, Mo, and W
Mattheiss, L. F., & Hamann, D. R. (1986) · Physical review. B, Condensed matter · doi:10.1103/physrevb.33.823 · Cited by 299 · see citing works
Self-citationBand structure of bismuth telluride, bismuth selenide and their respective alloys
GREENAWAY, D. L., & Harbeke, G. (1965) · Journal of Physics and Chemistry of Solids · doi:10.1016/0022-3697(65)90092-2 · Cited by 277 · see citing works
The Electrical Conductivity and Thermoelectric Power of Bismuth Telluride
Goldsmid, H. J. (1958) · Proceedings of the Physical Society · doi:10.1088/0370-1328/71/4/312 · Cited by 190 · see citing works
Non‐Parabolicity of the Highest Valence Band of Bi2Te3 from Shubnikov‐de Haas Effect
Köhler, H. (1976) · physica status solidi (b) · doi:10.1002/pssb.2220740218 · Cited by 118 · see citing works
Galvanomagnetic Effects in p-Type Bismuth Telluride
Drabble, J. R. (1958) · Proceedings of the Physical Society · doi:10.1088/0370-1328/72/3/308 · Cited by 78 · see citing works
de Haas-van Alphen Effect in n -Type Bi2 Te3
Mallinson, R. B., Rayne, J. A., & Ure, R. W. (1968) · Physical Review · doi:10.1103/physrev.175.1049 · Cited by 71 · see citing works
Wagner, V., Dolling, G., Powell, B. M., & Landweher, G. (1978) · physica status solidi (b) · doi:10.1002/pssb.2220850134 · Cited by 58 · see citing works
THE HALL AND SEEBECK EFFECTS IN NONSTOICHIOMETRIC BISMUTH TELLURIDE
Champness, C. H., & Kipling, A. L. (1966) · Canadian Journal of Physics · doi:10.1139/p66-066 · Cited by 47 · see citing works
The Electrical Properties of Bismuth Telluride
Mansfield, R., & Williams, W. (1958) · Proceedings of the Physical Society · doi:10.1088/0370-1328/72/5/307 · Cited by 46 · see citing works
The electronic band structure of bismuth telluride
Borghese, F., & Donato, E. (1968) · Il Nuovo Cimento B · doi:10.1007/bf02710238 · Cited by 40 · see citing works
The Band Structure of Bismuth Telluride
Katsuki, S. (1969) · Journal of the Physical Society of Japan · doi:10.1143/jpsj.26.58 · Cited by 40 · see citing works
Optical determination of the conduction band structure of GaSb
Cardona, M. (1961) · Journal of Physics and Chemistry of Solids · doi:10.1016/0022-3697(61)90201-3 · Cited by 35 · see citing works
Unkelbach, K. H., Becker, C. R., KÖhler, H., & von Middendorff, A. (1973) · physica status solidi (b) · doi:10.1002/pssb.2220600163 · Cited by 27 · see citing works
The Electronic Band Structure of Bismuth Telluride
Lee, P. M., & Pincherle, L. (1963) · Proceedings of the Physical Society · doi:10.1088/0370-1328/81/3/310 · Cited by 19 · see citing works
Optical Properties of Layer Compounds
Evans, B. L. (1976) · Springer eBooks · doi:10.1007/978-94-010-1478-6_1 · Cited by 17 · see citing works
Czochralski growth of doped single crystals of Bi2Te3
Laudise, R. A., Sunder, W. A., Barns, R. L., Cava, R. J., & Kometani, T. Y. (1989) · Journal of Crystal Growth · doi:10.1016/0022-0248(89)90602-7 · Cited by 12 · see citing works
Self-citationThe g‐Factor of the Holes in the Highest Valence Band of Bi2Te3
Köhler, H. (1976) · physica status solidi (b) · doi:10.1002/pssb.2220750206 · Cited by 11 · see citing works
Allen, L., & Rossouw, C. J. (1989) · Physical review. B, Condensed matter · doi:10.1103/physrevb.40.8041 · Cited by 1 · see citing works
Flagged first, then by citations
Cited by
Sorted by citations
A tunable topological insulator in the spin helical Dirac transport regime
Hsieh, D., Xia, Y., Qian, D., Wray, L., Dil, J. H., Meier, F., Osterwalder, J., Patthey, L., Checkelsky, J. G., Ong, N. P., et al. (2009) · Nature · doi:10.1038/nature08234 · Cited by 1,979 · see citing works
The Thermoelectric Properties of Bismuth Telluride
Witting, I. T., Chasapis, T. C., Ricci, F., Peters, M. C., Heinz, N. A., Hautier, G., & Snyder, G. J. (2019) · Advanced Electronic Materials · doi:10.1002/aelm.201800904 · Cited by 842 · see citing works
Electronic structure and thermoelectric properties of bismuth telluride and bismuth selenide
Mishra, S. K., Satpathy, S., & Jepsen, O. (1997) · Journal of Physics: Condensed Matter · doi:10.1088/0953-8984/9/2/014 · Cited by 540 · see citing works
Complex Band Structures and Lattice Dynamics of Bi 2 Te 3 ‐Based Compounds and Solid Solutions
Fang, T., Li, X., Hu, C., Zhang, Q., Yang, J., Zhang, W., Zhao, X., Singh, D. J., & Zhu, T. (2019) · Advanced Functional Materials · doi:10.1002/adfm.201900677 · Cited by 229 · see citing works
Topological Insulator Thin Films of Bi2Te3 with Controlled Electronic Structure
Wang, G., Zhu, X., Sun, Y., Li, Y., Zhang, T., Wen, J., Chen, X., He, K., Wang, L., Ma, X., et al. (2011) · Advanced Materials · doi:10.1002/adma.201100678 · Cited by 225 · see citing works
Lin, Y., Lin, S.-F., Chi, Y., Wu, C., Cheng, C., Tseng, W., He, J., Wu, C., Lee, C.-K., & Lin, G. (2015) · ACS Photonics · doi:10.1021/acsphotonics.5b00031 · Cited by 213 · see citing works
Larson, P., Greanya, V. A., Tonjes, W. C., Liu, R., Mahanti, S. D., & Olson, C. G. (2002) · Physical Review B · doi:10.1103/physrevb.65.085108 · Cited by 196 · see citing works
Thermoelectric properties of Sb 2 Te 3 under pressure and uniaxial stress
Thonhauser, T., Scheidemantel, T. J., Sofo, J. O., Badding, J. V., & Mahan, G. D. (2003) · Physical review. B, Condensed matter · doi:10.1103/physrevb.68.085201 · Cited by 186 · see citing works
Electronic structure and transport of Bi2Te3 and BaBiTe3
Larson, P., Mahanti, S. D., & Kanatzidis, M. G. (2000) · Physical review. B, Condensed matter · doi:10.1103/physrevb.61.8162 · Cited by 154 · see citing works
Antimonides with the half-Heusler structure: New thermoelectric materials
Mastronardi, K., Young, D. P., Wang, C.-C., Khalifah, P. G., Cava, R. J., & Ramirez, A. P. (1999) · Applied Physics Letters · doi:10.1063/1.123596 · Cited by 152 · see citing works
Electronic structure and transport anisotropy of Bi 2 Te 3 and Sb 2 Te 3
Yavorsky, B. Y., Hinsche, N. F., Mertig, I., & Zahn, P. K. (2011) · Physical Review B · doi:10.1103/physrevb.84.165208 · Cited by 147 · see citing works
The Thermoelectric Properties of n-Type Bismuth Telluride: Bismuth Selenide Alloys Bi2Te3−xSex
Witting, I. T., Ricci, F., Chasapis, T. C., Hautier, G., & Snyder, G. J. (2020) · Research · doi:10.34133/2020/4361703 · Cited by 149 · see citing works
First-principles electronic structure and its relation to thermoelectric properties of Bi2Te3
Youn, S. J., & Freeman, A. J. (2001) · Physical review. B, Condensed matter · doi:10.1103/physrevb.63.085112 · Cited by 123 · see citing works
Urazhdin, S., Bilc, D., Mahanti, S. D., Tessmer, S. H., Kyratsi, T., & Kanatzidis, M. G. (2004) · Physical Review B · doi:10.1103/physrevb.69.085313 · Cited by 122 · see citing works
Noh, H.-J., Koh, H., Oh, S.-J., Park, J.-H., Kim, H.-D., Rameau, J. D., Valla, T., Kidd, T. E., Johnson, P. D., Hu, Y., et al. (2008) · EPL (Europhysics Letters) · doi:10.1209/0295-5075/81/57006 · Cited by 115 · see citing works
Optical conductivity of bismuth-based topological insulators
Pietro, P. D., Vitucci, F., Nicoletti, D., Baldassarre, L., Calvani, P., Cava, R. J., Hor, Y. S., Schade, U., & Lupi, S. (2012) · Physical Review B · doi:10.1103/physrevb.86.045439 · Cited by 104 · see citing works
Aguilera, I., Friedrich, C., Bihlmayer, G., & Blügel, S. (2013) · Physical Review B · doi:10.1103/physrevb.88.045206 · Cited by 102 · see citing works
XPS and EELS study of the bismuth selenide
Nascimento, V. B., de Carvalho, V. E., Paniago, R. M., Soares, E. A., Ladeira, L. O., & Pfannes, H. ‐. (1999) · Journal of Electron Spectroscopy and Related Phenomena · doi:10.1016/s0368-2048(99)00012-2 · Cited by 99 · see citing works
Cheng, L., Liu, H., Zhang, J., Wei, J., Liang, J., Shi, J., & Tang, X. (2014) · Physical Review B · doi:10.1103/physrevb.90.085118 · Cited by 83 · see citing works
Computational Simulations of Thermoelectric Transport Properties
Ryu, B., & Oh, M. (2016) · Journal of the Korean Ceramic Society · doi:10.4191/kcers.2016.53.3.273 · Cited by 82 · see citing works
Jiang, J., Chen, L., Yao, Q., Bai, S., & Wang, Q. (2005) · Materials Chemistry and Physics · doi:10.1016/j.matchemphys.2004.12.028 · Cited by 79 · see citing works
Michiardi, M., Aguilera, I., Bianchi, M., de Carvalho, V. E., Ladeira, L. O., Teixeira, N. G., Soares, E. A., Friedrich, C., Blügel, S., & Hofmann, P. (2014) · Physical Review B · doi:10.1103/physrevb.90.075105 · Cited by 72 · see citing works
Quasiparticle electronic structure of bismuth telluride in the GW approximation
Kioupakis, E., Tiago, M. L., & Louie, S. G. (2010) · Physical Review B · doi:10.1103/physrevb.82.245203 · Cited by 67 · see citing works
Research Progress of Interfacial Design between Thermoelectric Materials and Electrode Materials
Le, W., Yang, W., Sheng, W., & Shuai, J. (2023) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.2c21035 · Cited by 65 · see citing works
QS G W : Quasiparticle self-consistent G W with ladder diagrams in W
Cunningham, B., Grüning, M., Pashov, D. L., & van Schilfgaarde, M. (2023) · Physical review. B./Physical review. B · doi:10.1103/physrevb.108.165104 · Cited by 64 · see citing works
Larson, P., & Lambrecht, W. R. L. (2008) · Physical Review B · doi:10.1103/physrevb.78.195207 · Cited by 64 · see citing works
Larson, P. (2006) · Physical Review B · doi:10.1103/physrevb.74.205113 · Cited by 62 · see citing works
Jiang, X., Gross, S., Zhang, H., Guo, Z., Withford, M. J., & Fuerbach, A. (2016) · Annalen der Physik · doi:10.1002/andp.201600014 · Cited by 59 · see citing works
Self-organized charge puddles in a three-dimensional topological material
Borgwardt, N., Lux, J., Vergara, I., Wang, Z., Taskin, A. A., Segawa, K., van Loosdrecht, P. H. M., Ando, Y., Rosch, A., & Grüninger, M. (2016) · Physical review. B./Physical review. B · doi:10.1103/physrevb.93.245149 · Cited by 55 · see citing works
Spin-orbit coupling in quasiparticle studies of topological insulators
Aguilera, I., Friedrich, C., & Blügel, S. (2013) · Physical Review B · doi:10.1103/physrevb.88.165136 · Cited by 57 · see citing works
Xu, J., Sun, Y., He, J., Wang, Y., Zhu, Z., You, Z., Li, J., Chou, M. M. C., Lee, C.-K., & Tu, C. (2015) · Scientific Reports · doi:10.1038/srep14856 · Cited by 57 · see citing works
Spin-polarized spatially indirect excitons in a topological insulator
Mori, R., Ciocys, S., Takasan, K., Ai, P., Currier, K., Morimoto, T., Moore, J. E., & Lanzara, A. (2023) · Nature · doi:10.1038/s41586-022-05567-3 · Cited by 54 · see citing works
Broadband photovoltaic effect of n-type topological insulator Bi2Te3 films on p-type Si substrates
Wang, Z., Li, M., Yang, L., Zhi-dong, Z., & Gao, X. (2016) · Nano Research · doi:10.1007/s12274-016-1369-2 · Cited by 53 · see citing works
Effect of p1/2 corrections in the electronic structure of Bi2Te3 compounds
Larson, P. (2003) · Physical review. B, Condensed matter · doi:10.1103/physrevb.68.155121 · Cited by 52 · see citing works
Takashiri, M., Asai, Y., & Yamauchi, K. (2016) · Nanotechnology · doi:10.1088/0957-4484/27/33/335703 · Cited by 50 · see citing works
Electronic structure and thermoelectric properties of Bi2Te3 crystals and graphene-doped Bi2Te3
Li, A. H., Shahbazi, M., Zhou, S., Wang, G., Zhang, C., Jood, P., Peleckis, G., Du, Y., Cheng, Z., Wang, X. L., et al. (2010) · Thin Solid Films · doi:10.1016/j.tsf.2010.03.124 · Cited by 49 · see citing works
Inamoto, T., & Takashiri, M. (2016) · Journal of Applied Physics · doi:10.1063/1.4963875 · Cited by 46 · see citing works
Quasiparticle band gap in the topological insulator Bi 2 Te 3
Nechaev, I. A., & Chulkov, E. V. (2013) · Physical Review B · doi:10.1103/physrevb.88.165135 · Cited by 45 · see citing works
Development of thermoelectric generating stacked modules aiming for 15% of conversion efficiency
Kaibe, H. T., Aoyama, I., Mukoujima, M., Kanda, T., Fujimoto, S., Kurosawa, T., Ishimabushi, H., Ishida, K., Rauscher, L., Hata, Y., et al. (2005) · International Conference on Thermoelectrics (ICT) · doi:10.1109/ict.2005.1519929 · Cited by 35 · see citing works
Fan, Z., Zheng, J., Wang, H., & Zheng, J. (2012) · Nanoscale Research Letters · doi:10.1186/1556-276x-7-570 · Cited by 35 · see citing works
Van Hove Singularity and Superconductivity in a Disordered Hubbard Model
Grzegorz Litak, A. (2002) · physica status solidi (b) · doi:10.1002/1521-3951(200202)229:3 · Cited by 7 · see citing works
Interband absorption edge in the topological insulators Bi2(Te1−xSex)3
Dubroka, A., Caha, O., Hronček, M., Friš, P., Orlita, M., Holý, V., Steiner, H., Bauer, G., Springholz, G., & Humlíček, J. (2017) · Physical review. B./Physical review. B · doi:10.1103/physrevb.96.235202 · Cited by 30 · see citing works
Bandgap modulation in photoexcited topological insulator Bi2Te3 via atomic displacements
Hada, M., Norimatsu, K., Tanaka, S., Keskin, S., Tsuruta, T., Igarashi, K., Ishikawa, T., Kayanuma, Y., Miller, R. J. D., Onda, K., et al. (2016) · The Journal of Chemical Physics · doi:10.1063/1.4955188 · Cited by 27 · see citing works
Bi2Te3 nanostructures prepared by microwave heating
Jiang, Y., & Zhu, Y. (2007) · Journal of Crystal Growth · doi:10.1016/j.jcrysgro.2007.05.012 · Cited by 29 · see citing works
Yu, Z., Wang, X. L., Du, Y., Yamini, S. A., Zhang, C., Chuang, K., & Li, S. (2012) · Journal of Crystal Growth · doi:10.1016/j.jcrysgro.2012.05.045 · Cited by 27 · see citing works
Nanoindentation pop-in effects of Bi2Te3 thermoelectric thin films
Jian, S., Tasi, C.-H., Huang, S., & Luo, C. (2014) · Journal of Alloys and Compounds · doi:10.1016/j.jallcom.2014.10.133 · Cited by 26 · see citing works
Mohyedin, M. Z., Taib, M. F. M., Radzwan, A., Shaari, A., Mustaffa, M., Haq, B. U., & Yahya, M. Z. A. (2020) · Computational and Theoretical Chemistry · doi:10.1016/j.comptc.2020.112851 · Cited by 26 · see citing works
The nonlinear absorption effects and optical limiting properties of Bi2Te3/rGO thin films
Liu, D., He, C., Chen, L., Li, W., & Zu, Y. (2020) · Optical Materials · doi:10.1016/j.optmat.2020.110634 · Cited by 26 · see citing works
Ren, X., Zheng, W., Qiao, H., Ren, L., Liu, S., Huang, Z., Qi, X., Wang, Z., Zhong, J., & Zhang, H. (2020) · Materials Today Energy · doi:10.1016/j.mtener.2020.100401 · Cited by 26 · see citing works
Phillips, J. C. (1994) · Physical Review Letters · doi:10.1103/physrevlett.72.3863 · Cited by 24 · see citing works
Kaddouri, H., Bénet, S., Charar, S., Makowska-Janusik, M., Tédenac, J. C., & Kityk, I. V. (2000) · Physical review. B, Condensed matter · doi:10.1103/physrevb.62.17108 · Cited by 23 · see citing works
Infrared study of the multiband low-energy excitations of the topological antiferromagnet MnBi2Te4
Xu, B., Zhang, Y., Alizade, E. H., Jahangirli, Z. A., Lyzwa, F., Sheveleva, E., Maršík, P., Li, Y. K., Yao, Y., Wang, Z., et al. (2021) · Physical review. B./Physical review. B · doi:10.1103/physrevb.103.l121103 · Cited by 23 · see citing works
Kulbachinskii, V. A., Ozaki, H., Miyahara, Y., & Funagai, K. (2003) · Journal of Experimental and Theoretical Physics · doi:10.1134/1.1641903 · Cited by 21 · see citing works
Fabrication of a p–n Heterojunction Using Topological Insulator Bi2Te3–Si and Its Annealing Response
Ahmad, F., Singh, R., Misra, P. K., Kumar, N., Kumar, R., & Kumar, P. (2018) · Journal of Electronic Materials · doi:10.1007/s11664-018-6609-7 · Cited by 20 · see citing works
Landau level spectroscopy of Bi2Te3
Mohelský, I., Dubroka, A., Wyzula, J., Slobodeniuk, A. O., Martinez, G., Krupko, Y., Piot, B. A., Caha, O., Humlíček, J., Bauer, G., et al. (2020) · Physical review. B./Physical review. B · doi:10.1103/physrevb.102.085201 · Cited by 20 · see citing works
Electronic structure of Bi2Te3 studied by angle-resolved photoemission
Greanya, V. A., Tonjes, W. C., Liu, R., Olson, C. G., Chung, D. Y., & Kanatzidis, M. G. (2000) · Physical review. B, Condensed matter · doi:10.1103/physrevb.62.16425 · Cited by 19 · see citing works
Internal electric fields and resonant Fermi-level pinning in anionic metals
Phillips, J. C. (1993) · Physical review. B, Condensed matter · doi:10.1103/physrevb.47.11615 · Cited by 18 · see citing works
Atomic ordering in cubic bismuth telluride alloy phases at high pressure
Loa, I., Bos, J. G., Downie, R. A., & Syassen, K. (2016) · Physical review. B./Physical review. B · doi:10.1103/physrevb.93.224109 · Cited by 17 · see citing works
Veis, A. N., Lukyanova, L. N., & Kutasov, V. A. (2012) · Physics of the Solid State · doi:10.1134/s1063783412110315 · Cited by 15 · see citing works
Rusinov, I. P., Nechaev, I. A., & Chulkov, E. V. (2013) · Journal of Experimental and Theoretical Physics · doi:10.1134/s1063776113060216 · Cited by 13 · see citing works
Cornucopia of Structures in the Pseudobinary System (SnSe)xBi2Se3: A Crystal-Chemical Copycat
Heinke, F., Urban, P., Werwein, A., Fraunhofer, C., Rosenthal, T., Schwarzmüller, S., Souchay, D., Fahrnbauer, F., Dyadkin, V. A., Wagner, G., et al. (2018) · Inorganic Chemistry · doi:10.1021/acs.inorgchem.8b00105 · Cited by 13 · see citing works
Many-body effects on the width of the band gap in Bi2Te2X (X = Te, Se, S) topological insulators
Rusinov, I. P., Nechaev, I. A., & Chulkov, E. V. (2013) · Journal of Experimental and Theoretical Physics Letters · doi:10.1134/s0021364013200125 · Cited by 13 · see citing works
Ln 3 Au 3 Sb 4 : Thermoelectrics with low thermal conductivity
Young, D. P., Mastronardi, K., Khalifah, P. G., Wang, C.-C., Cava, R. J., & Ramirez, A. P. (1999) · Applied Physics Letters · doi:10.1063/1.123240 · Cited by 13 · see citing works
Lattice-matched heterojunctions between topological and normal insulators: A first-principles study
Lee, H., & Yazyev, O. V. (2017) · Physical review. B./Physical review. B · doi:10.1103/physrevb.95.085304 · Cited by 12 · see citing works
Investigation of photoconductive effect on Bi2Te3 epitaxial film
Pirralho, M. J. P., Peres, M. L., Fornari, C. I., Holgado, D. P. A., Pena, F. S., Nakamatsu, S., Rappl, P. H. O., Abramof, E., & Soares, D. A. W. (2019) · Applied Physics Letters · doi:10.1063/1.5084722 · Cited by 11 · see citing works
Ahmad, F., Kandpal, K., Kumar, N., Kumar, R., & Kumar, P. (2020) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2020.3029126 · Cited by 11 · see citing works
Assessment of the thermoelectric performance of layered semiconductor SrFCuTe with wide band-gap
Jiang, Y., Zhang, Y., Xing, J., Hu, Y., Yang, X., Zhang, J., Guo, K., & Luo, J. (2021) · Journal of Solid State Chemistry · doi:10.1016/j.jssc.2021.122169 · Cited by 11 · see citing works
Ogawa, K., Azuma, J., Takahashi, K., Kamada, M., Sasaki, M., Ohnishi, A., Kitaura, M., & Kim, H. (2012) · Physical Review B · doi:10.1103/physrevb.85.165431 · Cited by 10 · see citing works
Electronic Structure of Complex Bismuth Chalcogenides and Other Narrow-Gap Thermoelectric Materials
Mahanti, S. D., Larson, P., Chung, D. Y., Sportouch, S., & Kanatzidis, M. G. (1998) · MRS Proceedings · doi:10.1557/proc-545-23 · Cited by 10 · see citing works
Local heating, resonant pinning and anisotropic interactions in anionic layered conductors
Phillips, J. C. (1994) · Physica C Superconductivity · doi:10.1016/0921-4534(94)90240-2 · Cited by 9 · see citing works
Electronic and Transport Properties of Sn-Doped Sb2Te3: A Hybrid Functional Study
Han, X., Amrane, N., Zhang, Z., & Benkraouda, M. (2020) · Journal of Electronic Materials · doi:10.1007/s11664-020-08184-w · Cited by 8 · see citing works
Improvement of power factor of n-type Bi2Te3 by dispersed nanosized Ga2Te3 precipitates
Hazama, H., Masuoka, Y., Yamamoto, H., Suto, H., Kinoshita, Y., Ishikiriyama, M., & Asahi, R. (2017) · Journal of Alloys and Compounds · doi:10.1016/j.jallcom.2017.07.272 · Cited by 8 · see citing works
Electronic Structure of Complex Bismuth Chalcogenide Systems
Mahanti, S. D., Larson, P., Bilc, D., & Li, H. (2003) · Fundamental materials research · doi:10.1007/978-1-4419-9278-9_14 · Cited by 8 · see citing works
Synthesis of strongly confined Bi2Te3 quantum dots by pulsed laser ablation in liquids
Subedi, R., Ruiz‐Zepeda, F., Zhou, Q., Lü, X., & Guisbiers, G. (2024) · Materials Today Quantum · doi:10.1016/j.mtquan.2024.100011 · Cited by 7 · see citing works
STM and STS Investigations of Bi2Te3Surface
Winiarz, S., Czajka, R., Suto, S., Lošt̆ák, P., SZUBA, S., & Kasuya, A. (2003) · Acta Physica Polonica A · doi:10.12693/aphyspola.104.389 · Cited by 7 · see citing works
Resonant pinning, supercell structure, and superconductivity (Tc > 140 K) in HgBaCaCuO systems
Phillips, J. C. (1993) · Materials Letters · doi:10.1016/0167-577x(93)90106-8 · Cited by 7 · see citing works
Busselez, R., Levchuk, A., Ruello, P., Juvé, V., & Arnaud, B. (2023) · Physical review. B./Physical review. B · doi:10.1103/physrevb.107.174305 · Cited by 6 · see citing works
Infrared spectroscopy of Cr- and V-doped Sb2Te3 : Dilute magnetic semiconductors
Manson, J., Madubuonu, A., Crandles, D. A., Uher, C., & Lošťák, P. (2014) · Physical Review B · doi:10.1103/physrevb.90.205205 · Cited by 6 · see citing works
Tao, X., Dutson, J., Zeng, C., Asker, C., Luong, S., Reza, A., Hao, B., Zhang, Z., Ellingford, J., Bonilla, R. S., et al. (2024) · Advanced Materials Technologies · doi:10.1002/admt.202301958 · Cited by 5 · see citing works
Vacancy and antisite-induced ferromagnetism in liquid-phase exfoliated Bi 2 Te 3
Gómez, V., Saenz, M. J., Canaval, J., Cuadrado, L., Espejo, C., López‐Pérez, W., & Hernández, Y. (2025) · 2D Materials · doi:10.1088/2053-1583/adac6d · Cited by 5 · see citing works
Park, S., Ryu, B., & Park, S.-D. (2021) · Applied Sciences · doi:10.3390/app112311341 · Cited by 5 · see citing works
Wada, K., Morikawa, S., & Takashiri, M. (2018) · Transactions of the Materials Research Society of Japan · doi:10.14723/tmrsj.43.311 · Cited by 4 · see citing works
Transition Metal Substitutions Induce Ferromagnetism in Bi2Te3
Ju, L., Xu, T., Hu, D., Cui, H. T., Zhang, Y., & Shi, C. (2015) · Chinese Journal of Chemical Physics · doi:10.1063/1674-0068/28/cjcp1412205 · Cited by 4 · see citing works
Synthesis of Bi2Te3 Urchin-like Nanorods by a Microwave–Solvothermal Method
Jiang, Y., Zeng, W., & Fang, Y. W. (2013) · Chemistry Letters · doi:10.1246/cl.130833 · Cited by 4 · see citing works
Charge transfer and superconductor-metal-insulator transitions in high- Tc superconductors
Phillips, J. C. (1995) · Physical review. B, Condensed matter · doi:10.1103/physrevb.51.15402 · Cited by 4 · see citing works
Rana, N., Singha, P., Mukherjee, S., Goswami, S., Das, S., Bandyopadhyay, S., & Banerjee, A. (2026) · Journal of Physics Condensed Matter · doi:10.1088/1361-648x/ae36d9 · Cited by 3 · see citing works
Wang, B. (2020) · Journal of Russian Laser Research · doi:10.1007/s10946-020-09886-6 · Cited by 3 · see citing works
Arévalo-López, E. P., Pilo, J., Rosas-Huerta, J. L., Antonio, J. E., Muñoz, H., Benítez-Rico, A., Escamilla, R. I., & Romero, M. (2024) · Physica Scripta · doi:10.1088/1402-4896/ad1c24 · Cited by 2 · see citing works
Anomalous composition dependence of Tc near Tcmax and microstructure of YBa2Cu3O7−δ
Phillips, J. C. (1993) · Materials Letters · doi:10.1016/0167-577x(93)90105-7 · Cited by 2 · see citing works
High-Temperature Superconductivity in the Layered Cuprates
Phillips, J. C. (1995) · Elsevier eBooks · doi:10.1016/b978-008042151-3/50002-7 · Cited by 1 · see citing works
Ogawa, K., Azuma, J., Takahashi, K., Kamada, M., Sasaki, M., Ohnishi, A., Kitaura, M., & Kim, H. (2012) · e-Journal of Surface Science and Nanotechnology · doi:10.1380/ejssnt.2012.117 · Cited by 1 · see citing works
Electronic structure of Sb/sub 2/Te/sub 3/ under pressure
Bartkowiak, M., & Mahan, G. D. (2003) · International Conference on Thermoelectrics (ICT) · doi:10.1109/ict.1999.843485 · Cited by 1 · see citing works
Many‐Body Effects in the Electronic Structure of Topological Insulators
Aguilera, I., Nechaev, I. A., Friedrich, C., Blügel, S., & Chulkov, E. V. (2015) · doi:10.1002/9783527681594.ch7
STS INVESTIGATIONS OF METALLIC NANOSTRUCTURES DEPOSITED ON Bi 2 Te 3
Winiarz, S., Biskupski, P., SZUBA, S., Mielcarek, S., & Czajka, R. (2007) · Surface Review and Letters · doi:10.1142/s0218625x07009657
Physics of the gap formation in half-Heusler compounds and bismuth chalcogenide systems
Mahanti, S. D., Larson, P., & Kanatzidis, M. G. (2003) · International Conference on Thermoelectrics (ICT) · doi:10.1109/ict.1999.843332
COMPANY "KOMATSU" AND ITS ACTIVITY
Aoyama, I., & Sano, S. (2009)
Structural and Galvanomagnetic properties in Mn-Bi2Te3thin films
Bidinakis, K., & Speliotis, T. (2017) · Journal of Physics Conference Series · doi:10.1088/1742-6596/939/1/012012
Biswas, S., Maity, S., & Chatterjee, K. (2019) · International Conference on Computer, Electrical & Communication Engineering (ICCECE) · doi:10.1109/iccece44727.2019.9001902
Anomalous temperature dependence of the effective mass in p -type Bi2Te3
Zelezny, V., Goian, V., Navrátil, J., Drašar, Č., Orlita, M., Piot, B. A., Prokleška, J., Míšek, M., Kaštil, J., & Kamba, S. (2021) · Physical review. B./Physical review. B · doi:10.1103/physrevb.104.165203
- Authors
- Thomas, G. A., Rapkine, D. H., Van Dover, R. B., Mattheiss, L. F., Sunder, W. A., Schneemeyer, L. F., & Waszczak, J. V.
- Affiliations
- AT&T (United States) (US)
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 1992-07-15
- Volume
- 46
- Issue
- 3
- Pages
- 1553-1556
- ISSN
- 0163-1829 (ISSN-L)
- 1095-3795
- OpenAlex
- W2003768371
- Cited by
- 100
- References
- 29
- Citations by year
- 2026: 1 · 2025: 1 · 2024: 3 · 2023: 4 · 2021: 4 · 2020: 8 · 2019: 4 · 2018: 3 · 2017: 4 · 2016: 8 · 2015: 4 · 2014: 4 · 2013: 6 · 2012: 6
- FWCI
- 2.47
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Physical review. B, Condensed matter (publishedVersion)
- PubMed (publishedVersion)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Advanced Thermoelectric Materials and Devices
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Topological Materials and Phenomena
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Physics of Superconductivity and Magnetism
- Keywords
- Bi2Te3, layered metals, electron density, cooling effect, free carrier concentration, optical conductivity, spectral weight, transport properties, topological insulators
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