Spin-orbit interaction effect in the electronic structure of Bi 2 Te 3 observed by angle-resolved photoemission spectroscopy
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Spin-orbit interaction effect in the electronic structure of Bi2Te3 observed by angle-resolved photoemission spectroscopy, Noh, H.-J., Koh, H., Oh, S.-J., Park, J.-H., Kim, H.-D., Rameau, J. D., Valla, T., Kidd, T. E., Johnson, P. D., Hu, Y., Li, Q.
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Zhang et al. also provided a simple tightbinding model to capture the single-Dirac-cone observed in Bi2Te3 and made new predictions about Bi2Se3 and Sb2Te3.
“Zhang et.al., also provided a simple tightbinding model to capture the single-Dirac-cone observed in Bi 2 Te 3 (28) and made new predictions about Bi 2 Se 3 and Sb 2 Te 3 .”
From Three-Dimensional Topological Insulators (2011) · cites this paper as [28]
The binding energy of the Bi2Te3 surface Dirac node exhibits a pronounced time dependence, increasing from EB~100 meV 8 minutes after cleavage to EB~130 meV at 40 minutes.
“Our results show that the binding energy of the Bi2 Te 3 surface Dirac node exhibits a pronounced time dependence, increasing from EB 100 meV 8 minutes after cleavage to EB 130 meV at 40 minutes [Figs. 3(c)-3(e)], in agreement with a previous report [20].”
From Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi2Te3 and Sb2Te3 (2009) · cites this paper as [20]
The slow dynamics of the band bending process suggests that charge accumulation at the surface is coupled to a much slower surface lattice relaxation.
“The slow dynamics of the band bending process suggests that charge accumulation at the surface is coupled to a much slower surface lattice relaxation [20].”
From Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi2Te3 and Sb2Te3 (2009) · cites this paper as [20]
The slow upward shift of the surface Fermi level is due to a surface band bending effect commonly observed in most semiconductors.
“Such a slow upward shift of the surface Fermi level has been observed also in Bi 2 Te 3 [17] and is due to a surface band bending effect commonly observed in most semiconductors (SI).”
From A tunable topological insulator in the spin helical Dirac transport regime (2009) · cites this paper as [17]
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<i>Colloquium</i> : Topological insulators
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- Authors
- Noh, H.-J., Koh, H., Oh, S.-J., Park, J.-H., Kim, H.-D., Rameau, J. D., Valla, T., Kidd, T. E., Johnson, P. D., Hu, Y., & Li, Q.
- Affiliations
- Chonnam National University (KR)
- Seoul National University (KR)
- Pohang University of Science and Technology (KR)
- Brookhaven National Laboratory (US)
- Venue
- EPL (Europhysics Letters)
- Publisher
- IOP Publishing
- Published
- 2008-02-12
- Volume
- 81
- Issue
- 5
- Pages
- 57006
- ISSN
- 0295-5075 (ISSN-L)
- 1286-4854
- OpenAlex
- W1997840692
- Cited by
- 115
- References
- 26
- Citations by year
- 2026: 3 · 2025: 3 · 2024: 3 · 2023: 1 · 2022: 5 · 2020: 5 · 2019: 6 · 2018: 10 · 2017: 6 · 2016: 8 · 2015: 13 · 2014: 9 · 2013: 7 · 2012: 13
- FWCI
- 4.44
- Type
- journal article
- Language
- en
- Open access
- green
- arxiv.org
- Locations
- Europhysics Letters (EPL) (publishedVersion)
- arXiv (Cornell University) (submittedVersion)
- Open Access System for Information Sharing (Pohang University of Science and Technology) (submittedVersion, cc-by-nc-nd)
- Topics
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Topological Materials and Phenomena
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Advanced Condensed Matter Physics
- Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
- Keywords
- Bi2Te3, spin-orbit coupling, electronic structure, topological insulators, angle-resolved photoemission
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