Surface effects in layered semiconductorsBi2Se3andBi2Te3
Abstract
Scanning tunneling spectroscopy of ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ and ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$ layered narrow gap semiconductors reveals finite in-gap density of states and suppressed conduction in the energy range of high valence-band states. Electronic structure calculations suggest that the surface effects are responsible for these properties. Conversely, the interlayer coupling has a strong effect on the bulk near-gap electronic structure. These properties may prove to be important for the thermoelectric performance of these and other related chalcogenides.
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The bulk VBM in Bi2Te3 lies at the b point in the ZL plane of the three-dimensional bulk BZ, giving rise to a VBM in each of the six such mirror planes.
“The bulk valence band maximum (VBM) in Bi2 Te 3 lies at the b point in the ZL plane of the three-dimensional bulk BZ [Fig. 2(b)], giving rise to a VBM in each of the six such mirror planes in agreement with previous proposals [24,25].”
From Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi2Te3 and Sb2Te3 (2009) · cites this paper as [25]
The time dependence of the Bi2Te3 surface Dirac node binding energy is attributed to downward band bending near the surface caused by breaking of interquintuple layer van der Waals Te(1)-Te(1) bonds, creating a net electric field upon crystal termination.
“Such behavior has been attributed to a downward band bending near the surface [Fig. 3(b)] that is caused by the breaking of interquintuple layer van der Waals Te ð 1 Þ -Te ð 1 Þ bonds [Fig. 3(a)], which creates a net electric field near the surface upon crystal termination [25,26].”
From Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi2Te3 and Sb2Te3 (2009) · cites this paper as [25]
For δ=0.0025, EF is in the bulk band gap.
“This is consistent with E F being in the bulk band gap because the indirect energy gap between the CBM and the VBM is known from both tunneling [24] and optical [25] data and theory [22] to be nearly 0.35 eV.”
From A tunable topological insulator in the spin helical Dirac transport regime (2009) · cites this paper as [24]
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- Authors
- Urazhdin, S., Bilc, D., Mahanti, S. D., Tessmer, S. H., Kyratsi, T., & Kanatzidis, M. G.
- Affiliations
- Michigan State University (US)
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2004-02-19
- Volume
- 69
- Issue
- 8
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W182198123
- Cited by
- 122
- References
- 24
- Citations by year
- 2026: 2 · 2025: 4 · 2024: 8 · 2023: 3 · 2022: 5 · 2021: 3 · 2020: 4 · 2019: 5 · 2018: 3 · 2017: 8 · 2016: 7 · 2015: 15 · 2014: 6 · 2013: 8 · 2012: 8
- FWCI
- 0.41
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Physical Review B (publishedVersion)
- Funders
- National Science Foundation
- Alfred P. Sloan Foundation
- Office of Naval Research
- Topics
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Topological Materials and Phenomena
- Physical Sciences › Materials Science › Materials Chemistry › Advanced Thermoelectric Materials and Devices
- Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
- Keywords
- Bi2Se3, Bi2Te3, layered semiconductors, surface effects, valence band states, interlayer coupling, thermoelectric performance, chalcogenides, narrow-gap semiconductors
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