The DOI matches its Crossref record; 16 of the 16 references it cites were found in a registry or an index.
Abinitio study of oxygen point defects in GaAs, GaN, and AlN
Open accessAbstract
We have studied oxygen point defects with the plane-wave pseudopotential method in GaAs, GaN, and AlN. The calculations demonstrate a qualitatively different behavior of oxygen impurities in these materials. ${\mathrm{O}}_{\mathrm{As}}$ in GaAs acts as a deep center with an off-center displacement and negative-U behavior, in agreement with the experimental data. ${\mathrm{O}}_{\mathrm{N}}$ in GaN is found to be a shallow donor with a low formation energy, and is suggested to act as a partial source for the unintentional n-type conductivity commonly observed in GaN. O in AlN is also found to easily substitute for N, which is consistent with the experimentally observed large oxygen concentrations in AlN. However, ${\mathrm{O}}_{\mathrm{N}}$ in AlN is shown to be a deep center due to the wide band gap, in contrast with ${\mathrm{O}}_{\mathrm{N}}$ in GaN. Our calculations thus predict that isolated oxygen acts as a DX-type center in ${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$N alloys. Results for other oxygen point defect configurations and for the dominant native defects are also presented. \textcopyright{} 1996 The American Physical Society.
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Cites
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Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
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First-principles calculations for point defects in solids
Freysoldt, C., Grabowski, B., Hickel, T., Neugebauer, J., Kresse, G., Janotti, A., & Van de Walle, C. G. (2014) · Reviews of Modern Physics · doi:10.1103/revmodphys.86.253 · Cited by 3,037
Some effects of oxygen impurities on AlN and GaN
Slack, G. A., Schowalter, L. J., Morelli, D., & Freitas, J. A. (2002) · Journal of Crystal Growth · doi:10.1016/s0022-0248(02)01753-0 · Cited by 415
High‐Speed and Low‐Energy Nitride Memristors
Choi, B. J., Torrezan, A. C., Strachan, J. P., Kotula, P. G., Lohn, A. J., Marinella, M. J., Li, Z., Williams, R. S., & Yang, J. J. (2016) · Advanced Functional Materials · doi:10.1002/adfm.201600680 · Cited by 356
Song, E., Jiang, X., Zhou, Y., Lin, Z., Ye, S., Xia, Z., & Zhang, Q. (2019) · Advanced Optical Materials · doi:10.1002/adom.201901105 · Cited by 268
Recent Advances in GaN‐Based Power HEMT Devices
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Metadata
- Authors
- Mattila, T., & Nieminen, R. M.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 1996-12-15
- Volume
- 54
- Issue
- 23
- Pages
- 16676-16682
- ISSN
- 0163-1829 (ISSN-L)
- 1095-3795
- OpenAlex
- W2067637314
- Cited by
- 296
- References
- 16
- FWCI
- 3.64
- Type
- journal article
- Language
- en
- Open access
- green
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