The DOI matches its Crossref record; 17 of the 17 references it cites were found in a registry or an index.
Point-defect complexes and broadband luminescence in GaN and AlN
Open accessAbstract
We have employed the plane-wave pseudopotential method to study point defect complexes in GaN and AlN. The results reveal that defect complexes consisting of dominant donors bound to cation vacancies are likely to be formed in both materials. The position of the electronic levels in the band gap due to these defect complexes is shown to correlate well with the experimentally commonly observed broadband luminescence both in GaN and in AlN. The origin of the large bandwidth of the luminescence spectrum is discussed.
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Cites
Special points for Brillouin-zone integrations
Monkhorst, H. J., & Pack, J. D. (1976) · Physical Review B · doi:10.1103/physrevb.13.5188 · Cited by 71,721
Soft self-consistent pseudopotentials in a generalized eigenvalue formalism
Vanderbilt, D. (1990) · Physical Review B · doi:10.1103/physrevb.41.7892 · Cited by 23,185
Pseudopotentials that work: From H to Pu
Bachelet, G. B., Hamann, D. R., & Schlüter, M. (1982) · Physical Review B · doi:10.1103/physrevb.26.4199 · Cited by 3,385
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
Morkoç, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., & Burns, M. (1994) · Journal of Applied Physics · doi:10.1063/1.358463 · Cited by 2,733
Nonlinear ionic pseudopotentials in spin-density-functional calculations
Louie, S. G., Froyen, S., & Cohen, M. L. (1982) · Physical Review B · doi:10.1103/physrevb.26.1738 · Cited by 2,247
Chemical potential dependence of defect formation energies in GaAs: Application to Ga self-diffusion
Zhang, S., & Northrup, J. (1991) · Physical Review Letters · doi:10.1103/physrevlett.67.2339 · Cited by 1,791
Car-Parrinello molecular dynamics with Vanderbilt ultrasoft pseudopotentials
Laasonen, K., Pasquarello, A., Car, R., Lee, C., & Vanderbilt, D. (1993) · Physical Review B · doi:10.1103/physrevb.47.10142 · Cited by 1,439
Gallium vacancies and the yellow luminescence in GaN
Neugebauer, J., & Van de Walle, C. G. (1996) · Applied Physics Letters · doi:10.1063/1.117767 · Cited by 1,140
Mechanism of Yellow Luminescence in GaN
Ogino, T., & Aoki, M. (1980) · Japanese Journal of Applied Physics · doi:10.1143/jjap.19.2395 · Cited by 686
Analysis of separable potentials
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Cited by
First-principles calculations for defects and impurities: Applications to III-nitrides
Van de Walle, C. G., & Neugebauer, J. (2004) · Journal of Applied Physics · doi:10.1063/1.1682673 · Cited by 3,257
Computationally predicted energies and properties of defects in GaN
Lyons, J. L., & Van de Walle, C. G. (2017) · npj Computational Materials · doi:10.1038/s41524-017-0014-2 · Cited by 312
Theoretical investigation of native defects, impurities, and complexes in aluminum nitride
Stampfl, C., & Van de Walle, C. G. (2002) · Physical Review B · doi:10.1103/physrevb.65.155212 · Cited by 276
Metadata
- Authors
- Mattila, T., & Nieminen, R. M.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 1997-04-15
- Volume
- 55
- Issue
- 15
- Pages
- 9571-9576
- ISSN
- 0163-1829 (ISSN-L)
- 1095-3795
- OpenAlex
- W2047471022
- Cited by
- 454
- References
- 17
- FWCI
- 14.18
- Type
- journal article
- Language
- en
- Open access
- bronze
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
