Cited by 67Thermal properties of materialsAdvanced Thermoelectric Materials and DevicesSemiconductor materials and interfaces

Thermal conductivity of epitaxial layers of dilute SiGe alloys

Cahill, David G., Watanabe, Fumiya, Rockett, Angus, Vining, Cronin B.·2005·Physical Review B

Abstract

The thermal conductivities of micron-thick epitaxial layers of dilute ${\mathrm{Si}}_{1\ensuremath{-}x}{\mathrm{Ge}}_{x}$ alloys, $2\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}4}<x<0.01$, are measured in the temperature range $297<T<550\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ using time-domain thermoreflectance. These new data are used to test competing models for the strength of phonon scattering by heavy impurity atoms. Even though the mass difference between Ge and Si is much larger than the Si atomic mass, we find that the thermal conductivity of dilute SiGe alloys is adequately described by the scattering strength for point defects derived by perturbation theory by Klemens in 1955.

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Crossref · 10.1103/physrevb.71.235202

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Authors
Cahill, D. G., Watanabe, F., Rockett, A., & Vining, C. B.
Affiliations
University of Illinois Urbana-Champaign (US)
Venue
Physical Review B
Published
2005-06-08
Volume
71
Issue
23
ISSN
  • 1098-0121 (ISSN-L)
  • 1550-235X
OpenAlex
W2042230937
Cited by
67
References
23
Citations by year
2025: 1 · 2023: 1 · 2022: 3 · 2018: 10 · 2017: 5 · 2016: 8 · 2015: 4 · 2014: 3 · 2013: 7 · 2012: 4
FWCI
2.04
Type
journal article
Language
en
Open access
closed
Locations
Physical Review B (publishedVersion)
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › Thermal properties of materials
  • Physical Sciences › Materials Science › Materials Chemistry › Advanced Thermoelectric Materials and Devices
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Semiconductor materials and interfaces
Keywords
thermal conductivity, epitaxial layers, phonon scattering, point defects, time-domain thermoreflectance

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