The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
Mechanism for bipolar switching in aPt/TiO2/Ptresistive switching cell
Abstract
We suggest a possible mechanism for bipolar switching in a $\text{Pt}/{\text{TiO}}_{2}/\text{Pt}$ resistive switching cell in terms of electrochemical reactions involving oxygen ions/vacancies. The electrochemical reactions are considered to take place at an interface between Pt and ${\text{TiO}}_{2}$ solid electrolyte, and they modulate the Schottky barrier height at the interface. Calculation results using this proposed mechanism can explain a bipolar switching behavior and semiquantitatively describe experimental data.
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Cited by
Memory effects in complex materials and nanoscale systems
Pershin, Y. V., & Di Ventra, M. (2011) · Advances In Physics · doi:10.1080/00018732.2010.544961 · Cited by 823
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Memristor‐Based Neuromorphic Chips
Duan, X., Cao, Z., Gao, K., Yan, W., Sun, S., Zhou, G., Wu, Z., Ren, F., & Sun, B. (2024) · Advanced Materials · doi:10.1002/adma.202310704 · Cited by 432
Direct Identification of the Conducting Channels in a Functioning Memristive Device
Strachan, J. P., Pickett, M. D., Yang, J. J., Aloni, S., David Kilcoyne, A. L., Medeiros‐Ribeiro, G., & Stanley Williams, R. (2010) · Advanced Materials · doi:10.1002/adma.201000186 · Cited by 329
Spectromicroscopy of tantalum oxide memristors
Strachan, J. P., Medeiros-Ribeiro, G., Yang, J. J., Zhang, M.-X., Miao, F., Goldfarb, I., Holt, M., Rose, V., & Williams, R. S. (2011) · Applied Physics Letters · doi:10.1063/1.3599589 · Cited by 90
Metadata
- Authors
- Jeong, D. S., Schroeder, H., & Waser, R.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2009-05-18
- Volume
- 79
- Issue
- 19
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W2069079040
- Cited by
- 182
- References
- 3
- FWCI
- 14.52
- Type
- journal article
- Language
- en
- Open access
- closed
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- Jeong, D. S., Schroeder, H., & Waser, R. (2009). Mechanism for bipolar switching in aPt/TiO2/Ptresistive switching cell. Physical Review B. https://doi.org/10.1103/physrevb.79.195317
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