Spectromicroscopy of tantalum oxide memristors
Abstract
We report experiments to measure material changes in tantalum oxide-based memristive devices. The high endurance and low power demonstrated in this material system suggests a unique mechanism for the switching, which we investigated using x-ray based spectromicroscopy and nanospectroscopy. Our study nondestructively identified a localized (<150nm diameter) Ta-rich phase surrounded by nano- or polycrystalline Ta2O5.
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The unpatterned tantalum oxide film was sputter-deposited from a tantala target and consisted of amorphous tantalum pentoxide (a-Ta2O5) with a high concentration of oxygen vacancies.
“The unpatterned tantalum oxide film was sputter-deposited from a tantala target and consisted of amorphous tantalum pentoxide (a-Ta 2 O 5 ) with a high concentration of oxygen vacancies [25].”
From Sub-nanosecond switching of a tantalum oxide memristor (2011) · cites this paper as [25]
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Sub-nanosecond switching of a tantalum oxide memristor
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- Authors
- Strachan, J. P., Medeiros-Ribeiro, G., Yang, J. J., Zhang, M.-X., Miao, F., Goldfarb, I., Holt, M., Rose, V., & Williams, R. S.
- Affiliations
- Hewlett-Packard (United States) (US)
- HP Labs 1 nanoElectronics Research Group, , 1501 Page Mill Road, Palo Alto, California 94304, USA
- Argonne National Laboratory (US)
- ORCID
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2011-06-13
- Volume
- 98
- Issue
- 24
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2015960619
- Cited by
- 90
- References
- 25
- Citations by year
- 2026: 1 · 2023: 2 · 2022: 2 · 2021: 5 · 2020: 3 · 2019: 8 · 2018: 4 · 2017: 4 · 2016: 14 · 2015: 11 · 2014: 9 · 2013: 14 · 2012: 10
- FWCI
- 8.05
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Applied Physics Letters (publishedVersion)
- Funders
- Basic Energy Sciences, Office of Science, U.S. Department of Energy (DE-AC02-06CH11357)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
- Keywords
- tantalum oxide, memristors, resistive switching, tantalum pentoxide, switching mechanism, X-ray spectromicroscopy, nanospectroscopy, non-destructive characterization, low power consumption
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