The DOI matches its Crossref record; 14 of the 14 references it cites were found in a registry or an index; none of the 8 sources its claims cite is checked for support yet.
Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
Open accessAbstract
We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magnetotransport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight-binding model, we extract the value of the gap as a function of the electronic density. We show that the gap can be changed from zero to midinfrared energies by using fields of less, approximately < 1 V/nm, below the electric breakdown of SiO2. The opening of a gap is clearly seen in the quantum Hall regime.
Overview
AI snapshot
Written from the paper’s full text.
TL;DR
The paper reports that bilayer graphene can be converted into a semiconductor whose band gap is externally tunable by gate bias, with the gap ranging from zero to mid-infrared energies. Magnetotransport measurements and tight-binding modeling show clear gap signatures, including a zero Hall conductivity plateau and an asymmetric cyclotron mass.
Key findings
- In biased bilayer graphene, a plateau at zero Hall conductivity appears at the neutrality point, unlike the pristine case; the longitudinal resistivity at neutrality exceeded 150 kΩ at 4 K for the biased device, compared with 6 kΩ for the unbiased device under the same conditions.
- The cyclotron mass depends asymmetrically on carrier density, and comparison with tight-binding theory yields an interlayer hopping parameter of 0.22 eV and indicates gaps larger than 0.2 eV.
- A small-bias linear fit to the screened theory gives a gap of about 1.2 meV per volt relative to a gate voltage of 25 V, while the theory predicts gap saturation at the interlayer hopping scale.
- The model agrees well with angle-resolved photoemission data, except in the gap saturation regime around densities of about 50 × 10¹² cm⁻².
Methods
- Bilayer graphene devices were prepared by micromechanical cleavage on 300 nm SiO₂ and patterned into Hall bars; carrier density was controlled by a Si backgate and by NH₃ chemical doping, with transport measured by lock-in techniques in fields up to 12 T and temperatures from 4 to 300 K.
- Shubnikov–de Haas oscillations were measured versus temperature and fitted to extract the cyclotron mass as a function of carrier density.
- The data were interpreted with a Bernal-stacked bilayer tight-binding model using in-plane hopping of 3.1 eV and interlayer hopping of 0.22 eV, including a self-consistent Hartree treatment of screening; Hall conductivity was modeled for a zigzag-edged ribbon in a magnetic field.
Limitations
- The paper states that the Hartree approach is reliable only when the gap is small compared with the interlayer hopping; for hole doping it underestimates the cyclotron mass while the unscreened model overestimates it, so the true gap lies between these limits and a better screening treatment is needed when the electrostatic energy becomes comparable to the interlayer hopping.
- The paper notes that the comparison with angle-resolved photoemission data works well except in the gap saturation regime at high density.
- Evident from the text: for the transport devices, the gap values are inferred by fitting a tight-binding/Hartree model to magnetotransport rather than measured directly by a spectroscopic probe.
Model-written summary. Check it against the paper before relying on it.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
0 of 8 cited sources checked · 0 supported · 0 flagged
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“The opening of a gap is clearly seen in the quantum Hall regime.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Load-bearingStrength:boosted· not yet calibratedTests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesA result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“which is absent in the unbiased case”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Load-bearingStrength:plain· not yet calibratedTests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesA result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“by comparing the observed behavior with our tightbinding results, we show that the gap can be tuned to values larger than 0.2 eV”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesA result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“in the biased device, xx at n 0 exceeded 150 kOhm at 4 K, as compared to 6 kOhm for the unbiased case under the same conditions”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesA result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“in a magnetic field, a pronounced plateau at zero Hall conductivity xy 0 is found for the biased bilayer”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Load-bearingStrength:plain· not yet calibratedTests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesA result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“the cyclotron mass, m c , in the bilayer biased by chemical doping is an asymmetric function of carrier density, n”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesA result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“The linear increase of m c with jnj and the pronounced asymmetry between hole-and electron-doping of the biased bilayer are clearly seen here.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesA result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“We show that the gap can be changed from zero to midinfrared energies by using fields of & 1 V=nm, below the electric breakdown of SiO 2 .”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passes- Rests on an assumption: The breakdown field for SiO2 is 1 V/nm (i.e., 300 V for the used oxide thickness).
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“The linear increase of m c with jnj and the pronounced asymmetry between hole-and electron-doping of the biased bilayer are clearly seen here.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesA result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“The energy gap is revealed by the appearance of the N 0 plateau at xy 0 [see the curve labeled ''doped'' in Fig. 1(a)].”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passes
- It may state two separate claims as one. 10
- The quote only partly states this claim. 2
- Probably not a substantial claim. 1
In the paper
“The N 0 plateau is strikingly absent, so that a double step of 8e 2 =h in height occurs at n 0, indicating a metallic state at the neutrality point [3].”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
What the sources say
- Not matchedcites [3] 3. K. S. Novoselov et al., Nature Phys. 2, 177 (2006).
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesIt may state two separate claims as one.
- Not matched
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“In this case two flat bands with energies ÿeV=2 and eV=2 appear, similar to the case of zero magnetic field.The other two zero energy bands become dispersive inside the gap, showing the band-crossing phenomenon.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesIt may state two separate claims as one.
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“In the hole doping region in Fig. 1(b), the Hartree approach underestimates the value of m c whereas the simple unscreened result overestimates it.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Strength:plain· not yet calibratedCausal:correlational· not yet calibratedTests✓ Asserted: passes✓ Checkable: passes? Load-bearing: unclear✓ Based: passesIt may state two separate claims as one.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“The emerged plateau was accompanied by a huge peak in longitudinal resistivity xx , indicating an insulating state”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesIt may state two separate claims as one.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“which provides a clear signature of a gap and allows its estimate”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesIt may state two separate claims as one.
In the paper
“we have cross-checked our theory against angle-resolved photoemission spectroscopy (ARPES) data [8] and found excellent agreement.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
What the sources say
- Not matchedcites [8] 8. Theory of the gap opening within the continuum model was previously given by E. McCann, Phys. Rev. B 74, 161403 (2006).
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
Strength:plain· not yet calibratedCausal:correlational· not yet calibratedTests✓ Asserted: passes✓ Checkable: passes? Load-bearing: unclear✓ Based: passesIt may state two separate claims as one.
- Not matched
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Zero potential difference and zero gap are expected at n 2n 0 in both unscreened and screened cases, as seen from Eqs. (1) and ( 2) and the fact that nn; 0 0.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Load-bearingStrength:plain· not yet calibratedTests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesIt may state two separate claims as one.
- The authors state this as an assumption: The charge in layers 1 and 2 of the bilayer is equal to -ne/2.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Note that at the zero Hall plateau the current carried around the ribbon loop is zero, I 0, which implies, from the theory view point, a diverging longitudinal resistivity at low T”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesIt may state two separate claims as one.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“This opens a gap of eV in size.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesThe quote only partly states this claim.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“At this particular density the gap closes and the theoretical value becomes independent of the screening assumptions.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesIt may state two separate claims as one. The quote only partly states this claim.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“a more accurate treatment of screening is needed when eV becomes of the order of t ? .”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Strength:plain· not yet calibratedTests✓ Asserted: passes✓ Checkable: passes✗ Load-bearing: fails✓ Based: passesProbably not a substantial claim. The paper’s conclusions may not depend on it.
In the paper
“The coefficient 7:2 10 10 cm ÿ2 =V is determined by the geometry of the resulting capacitor and is in agreement with the values of n 1 found experimentally [1][2][3].”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
What the sources say
- Not matchedcites [1][2][3]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
Strength:plain· not yet calibratedCausal:direct· not yet calibratedTests✓ Asserted: passes✓ Checkable: passes? Load-bearing: unclear✓ Based: passesIt may state two separate claims as one.
- Not matched
The authors state this as an assumption.
The charge in layers 1 and 2 of the bilayer is equal to -ne/2.
“Assuming equal charge ÿne=2 in layers 1 and 2 of the bilayer”
The paper relies on this without support.
The breakdown field for SiO2 is 1 V/nm (i.e., 300 V for the used oxide thickness).
“Note that the breakdown field for SiO 2 is 1 V=nm (i.e., 300 V for the used oxide thickness)”
The authors state this as an assumption.
The electric field induced between the two layers can be considered as a result of the effect of charged surfaces placed above and below bilayer graphene.
“The electric field induced between the two layers can be considered as a result of the effect of charged surfaces placed above and below bilayer graphene .”
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
Each contradiction between two passages listed here was confirmed by an independent check.
Laughlin is cited under the wrong reference number
MinorThe text attributes an argument to Laughlin [14], while the reference list assigns 14 to a note and lists Laughlin at 15.
“As pointed out by Laughlin [14], changing the magnetic flux through the ribbon loop by a flux quantum causes the states to move rigidly towards one edge.”
“14. The unbiased case, in the continuum approximation, was studied in Ref. [5]. 15. R. B. Laughlin, Phys. Rev. B 23, 5632 (1981).”
Citations
Cites
Electric Field Effect in Atomically Thin Carbon Films
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004) · Science · doi:10.1126/science.1102896 · Cited by 66,834
Self-citationGeim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
Self-citationTwo-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Self-citationExperimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
Detection of individual gas molecules adsorbed on graphene
Schedin, F., Geim, A. K., Morozov, S. V., Hill, E. W., Blake, P., Katsnelson, M. I., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1967 · Cited by 8,028
Self-citationControlling the Electronic Structure of Bilayer Graphene
Ohta, T., Bostwick, A., Seyller, T. K., Horn, K., & Rotenberg, E. (2006) · Science · doi:10.1126/science.1130681 · Cited by 3,346
Halperin, B. I. (1982) · Physical Review B · doi:10.1103/physrevb.25.2185 · Cited by 2,547
Quantized Hall conductivity in two dimensions
Laughlin, R. B. (1981) · Physical Review B · doi:10.1103/physrevb.23.5632 · Cited by 2,162
Landau-Level Degeneracy and Quantum Hall Effect in a Graphite Bilayer
McCann, E., & Fal’ko, V. I. (2006) · Physical Review Letters · doi:10.1103/physrevlett.96.086805 · Cited by 2,060
Unconventional quantum Hall effect and Berry’s phase of 2π in bilayer graphene
Novoselov, K. S., McCann, E., Morozov, S. V., Fal’ko, V. I., Katsnelson, M. I., Zeitler, U., Jiang, D., Schedin, F., & Geim, A. K. (2006) · Nature Physics · doi:10.1038/nphys245 · Cited by 1,967
Self-citation
Flagged first, then by citations
Cited by
Sorted by citations
Items 1,801–1,900 of 2,039
INTRODUCTION. NOBEL PRIZE LAUREATES AND AWARD JUSTIFICATION
(2024) · Elsevier eBooks · doi:10.1016/b978-1-77467-036-1.50004-3
Electric field influenced coordinate jump of the guiding centre and magnetotransport
Feng, J., Gao, Y., & Niu, Q. (2022) · Philosophical Magazine Letters · doi:10.1080/09500839.2022.2152505
“(2) During the scattering, there is a sudden shift of guiding centre coordinates (X, Y, R, w) (X′, Y ′, R′, w′).”
BackgroundWang, S., Li, M., Chen, Z., et al. (2022) · MRS Communications · doi:10.1557/s43579-022-00308-z
Edges, nanoribbons, and quantum dots
Katsnelson, M. I. (2020) · Cambridge University Press eBooks · doi:10.1017/9781108617567.007
Klein tunneling and ballistic transport in graphene and related materials
Torres, L. E. F. F., Roche, S., & Charlier, J. (2014) · Cambridge University Press eBooks · doi:10.1017/cbo9781139344364.005
A computational study on transport properties of square graphene nanoconstriction
Husain, S. S., & Johari, Z. (2015) · IEEE Regional Symposium on Micro and Nanoelectronics · doi:10.1109/rsm.2015.7355028
“As such, graphene is tailored by many ways with an intention to induce separation of conduction and valence band [3, 4, 5].”
Background2d Suspended Fet Technology: Overcoming Scattering Effect For Ultrasensitive Reliable Biosensor
Masurkar, N. (2019) · Human Biology
Evanescent mode assisted Klein tunneling in dual-gated bilayer graphene
Huang, Y., & Zeng, W. (2026) · Physical review. B./Physical review. B · doi:10.1103/wk4v-k4f2
“Both terms are independently controlled by the top-and bottom-gate voltages [27, 37].”
Lifting Spin Degeneracy in Rhombohedral Trilayer Graphene for High Magnetoresistance Applications
Zhang, L., Zhou, J., Yang, J., et al. (2025) · The Journal of Physical Chemistry Letters · doi:10.1021/acs.jpclett.5c02712
Research Progress of MoS2 Nanosheets
王, 轩. (2014) · Advances in Material Chemistry · doi:10.12677/amc.2014.24008
INTRODUCTION. NOBEL PRIZE LAUREATES AND AWARD JUSTIFICATION
Wypych, G. (2019) · Elsevier eBooks · doi:10.1016/b978-1-927885-51-2.50003-1
Sensitivities of Bilayer Graphene FET Performance to Bipolar Characteristics
Li, J., Wensheng, W., & Dai, Y. (2012) · International Conference on Digital Manufacturing & Automation · doi:10.1109/icdma.2012.180
Torres, L. E. F. F., Roche, S., & Charlier, J. (2020) · Cambridge University Press eBooks · doi:10.1017/9781108664462.017
Valley Polarization in Transition-Metal Dichalcogenides by Optical Pumping
Dai, J., & Cui, X. (2013) · Lecture notes in nanoscale science and technology · doi:10.1007/978-3-319-02850-7_10
Quantum Transport: General Concepts
Torres, L. E. F. F., Roche, S., & Charlier, J. (2020) · Cambridge University Press eBooks · doi:10.1017/9781108664462.006
Structural Response of the Water Dimer to an Electric Field
Carneiro, B. C. C., Carneiro, F. L., Barbosa, L. S., et al. (2026) · ACS Omega · doi:10.1021/acsomega.6c00894
Torres, L. E. F. F., Roche, S., & Charlier, J. (2020) · Cambridge University Press eBooks · doi:10.1017/9781108664462.010
Magnetic quantization in multilayer graphenesPreprint
Lin, C., Wu, J.-Y., Ou, Y. C., et al. (2015) · arXiv (Cornell University) · doi:10.48550/arxiv.1506.06219
Huang, Z.-H., Lai, J.-Y., & Wu, Y.-S. G. (2026) · Materials · doi:10.3390/ma19020380
Salimian, S., & Araghi, M. E. A. (2016) · Diamond and Related Materials · doi:10.1016/j.diamond.2016.05.012
Lee, W., Lu, E. C.-H., Li, L., et al. (2021) · Research Square · doi:10.21203/rs.3.rs-138298/v1
“The operation of a dual-gated device not only capacitively varies the density of the system but also changes the D values that acts on the BLG [19, 20].”
BackgroundGreen’s Functions and Ab Initio Quantum Transport in the Landauer–Büttiker Formalism
Torres, L. E. F. F., Roche, S., & Charlier, J. (2020) · doi:10.1017/9781108664462.015
Roll-to-Roll Transfer Printing of Reduced Graphene Oxide Thin Film
Jang, H.-W. (2015) · Summit (Simon Fraser University)
董, 记. (2021) · Advances in Condensed Matter Physics · doi:10.12677/cmp.2021.103009
Electronic and Optical Properties of Twisted Bilayer Graphene
Huang, S. (2018) · UA Campus Repository (The University of Arizona)
Monte Carlo simulation study of spin transport in multilayer graphene with Bernal stacking
Misra, S., Ghosh, B., Nandal, V., et al. (2012) · Journal of Applied Physics · doi:10.1063/1.4739730
Phase boundary of spin-polarized-current state of electrons in bilayer graphene
Yan, X.-Z., Ma, Y., & Ting, C. S. (2016) · Physical review. B./Physical review. B · doi:10.1103/physrevb.93.245158
Anonymous, Xiong, Y., Liang, Y., & Ma, T. (2026) · Physical review. B./Physical review. B · doi:10.1103/glxl-l925
Quantum transport in disordered graphene-based materials
Torres, L. E. F. F., Roche, S., & Charlier, J. (2014) · Cambridge University Press eBooks · doi:10.1017/cbo9781139344364.006
Hydrogen-Like Impurity States in Doped Bilayer Graphene: Results for Different Trial Functions
Avetisyan, A. A., Moulopoulos, K., & Djotyan, A. P. (2024) · Journal of Contemporary Physics (Armenian Academy of Sciences) · doi:10.1134/s1068337224700385
Moussavou, G. M., Kamsap, M. R., Mboumba, M. D., et al. (2026) · Brazilian Journal of Physics · doi:10.1007/s13538-026-02084-w
Applications of carbon nanomaterials in quantum technologies
McDonnell, L., Spencer, J., Signe, J. L., & Vovrosh, J. (2026) · Elsevier eBooks · doi:10.1016/b978-0-443-33473-3.00016-4
Review of Rhombohedral Graphite
Ozdemir, S. (2021) · Springer theses · doi:10.1007/978-3-030-88307-2_1
Katsnelson, M. I. (2020) · Cambridge University Press eBooks · doi:10.1017/9781108617567.001
Quantum transport via evanescent waves
Katsnelson, M. I. (2020) · Cambridge University Press eBooks · doi:10.1017/9781108617567.005
Effects of morphology and charge transport of PDIF-CN2 /graphene TFT
Mathew, J., & Cassese, D. (2021) · Journal of Molecular Structure · doi:10.1016/j.molstruc.2021.130604
Quantum transport of Dirac fermions in graphene nanostructures
Dollfus, P., Nguyễn, V. H., Do, V. N., et al. (2010) · International Workshop on Computational Electronics · doi:10.1109/iwce.2010.5677935
“A similar bandgap may be also induced in bilayer graphene by applying a vertical electric field [9,10].”
BackgroundBilayers of Polycyclic Aromatic Hydrocarbons as Graphene Bilayer: A DFT Study
Yadav, A., & Singh, A. (2024) · National Academy Science Letters · doi:10.1007/s40009-024-01575-1
Jang, B. G., & Kim, S. (2026) · Physical Chemistry Chemical Physics · doi:10.1039/d6cp00647g
Kumar, S. B., & Ajay (2014) · Physica E Low-dimensional Systems and Nanostructures · doi:10.1016/j.physe.2014.08.010
Absorption spectra of graphene nanoribbons in a composite magnetic field
Li, T. S., Wu, M. F., & Hsieh, C. T. (2015) · Solid State Communications · doi:10.1016/j.ssc.2015.07.010
2D magnets with broken inversion symmetry
Zhang, H., Chen, X., Shao, Y., Birgeneau, R. J., & Ramesh, R. (2026) · Applied Physics Reviews · doi:10.1063/5.0288390
Bach, K. K., Lam, P. N.-T., Le, M. T., et al. (2026) · ACS Applied Nano Materials · doi:10.1021/acsanm.6c01789
Optical Properties and Optoelectronic Applications of Black Phosphorus
Castellanos-Gómez, A., & Li, M. (2017) · Cambridge University Press eBooks · doi:10.1017/9781316681619.024
Gobelko, I. E., Rozhkov, A. V., & Dresvyankin, D. N. (2023) · Письма в Журнал экспериментальной и теоретической физики · doi:10.31857/s1234567823210103
Electronic structure calculations: the density functional theory (DFT)
Torres, L. E. F. F., Roche, S., & Charlier, J. (2014) · doi:10.1017/cbo9781139344364.010
Quantum Field Approaches to Chemical Systems
Karimpour, M. R., Gori, M., & Tkatchenko, A. (2026) · Journal of the American Chemical Society · doi:10.1021/jacs.6c02077 · Cited by 1
Pseudospintronics in bilayer graphene
San-José, P., Prada, E., McCann, E., et al. (2009)
Effects of Interfacial Distance and Electric Field on Graphene-Silicene Hybrid StructuresPreprint
Abeywickrama, K. M., Pitigala, P. K. D. D. P., & Silva, W. W. P. D. (2021) · arXiv (Cornell University) · doi:10.48550/arxiv.2109.00813
“There are many possibilities to regulate the band structure/gap; applying a transverse external electric field[5], changing interfacial distances[6], doping and hydroganization [7] are few of them.”
BackgroundArafin, M. T., & Islam, S. (2012) · International Conference on Electrical and Computer Engineering (ICECE) · doi:10.1109/icece.2012.6471565
Basic electronic properties of graphenes
Koshino, M. (2010) · Carbon · doi:10.1016/j.carbon.2010.06.069
Shafraniuk, S. (2017) · Elsevier eBooks · doi:10.1016/b978-0-323-44397-5.00013-5
Physics of quantum fluids in two-dimensional topological systems
Bleu, O. (2018) · theses.fr (ABES) · doi:10.70675/0da268edz4fe9z4b0eza2e3zf82ba4f81d70
“Several theoretical works have proposed to use bilayer graphene systems, where a tunable gap can be opened by applying a bias voltage [221, 242] to organize these interface states [237, 243, 235].”
Electrical conductivity of double-layer systems at finite temperature
Vyas, H. T., Patel, D. K., Ambavale, S. K., et al. (2026) · Journal of Computational Electronics · doi:10.1007/s10825-026-02514-7
“…symmetry can be broken to induce a nonzero bandgap, and various techniques have been proposed to achieve this, including the application of an external electric field [8], strain engineering, doping with foreign atoms [9, 10], and bilayer graphene heterostructure creation with different materials.”
InfluentialIntroduction to carbon-based nanostructures
Torres, L. E. F. F., Roche, S., & Charlier, J. (2014) · Cambridge University Press eBooks · doi:10.1017/cbo9781139344364.002
Electronic structure and its tuning of large-angle twisted monolayer–bilayer graphene
Tong, L.-H., Guo, W.-L., Zhang, Y., et al. (2026) · Applied Physics Letters · doi:10.1063/5.0334210
The Klein paradox and chiral tunneling
Katsnelson, M. I. (2020) · Cambridge University Press eBooks · doi:10.1017/9781108617567.006
Exploring bilayer graphene lateral quantum structures for valley filtering
Lin, Y.-J., Chen, F.-W., Huang, B.-C., et al. (2020) · Journal of Applied Physics · doi:10.1063/5.0010961
Electronic and Phonon Instabilities in Bilayer Graphene under Applied External BiasPreprint
da Silva, E. L., Santos, M. C., Skelton, J. M., et al. (2018) · arXiv (Cornell University) · doi:10.48550/arxiv.1809.06555
Influence of laser-induced white emission on the resistivity of graphene foam
Wiewiórski, P., Tomala, R., Stefanski, M., et al. (2026) · Chemical Physics Letters · doi:10.1016/j.cplett.2026.142848
Quartic energy band engineering in artificial semiconductor honeycomb latticesPreprint
Okcu, E., Mesudiyeli, E., Sevinçli, H., et al. (2026) · SSRN Electronic Journal · doi:10.2139/ssrn.6300282
Zhou, B., Zhang, S., Jin, C., et al. (2025) · Nanoscale · doi:10.1039/d5nr03848k
Quantum Hall Effects in Graphene
Torres, L. E. F. F., Roche, S., & Charlier, J. (2020) · Cambridge University Press eBooks · doi:10.1017/9781108664462.009
Morales, A. G. R., & Daniel, J. V. (2016)
Monolayer and bilayer graphene
McCann, E. (2022) · Elsevier eBooks · doi:10.1016/b978-0-323-90800-9.00019-6 · Cited by 1
Sliding-reversible bandgap modulation in irreversible asymmetric multilayers
Ke, C., Yang, Y., Qian, Z., et al. (2024) · Applied Physics Letters · doi:10.1063/5.0232473
Two-Dimensional Electronics - Prospects and Challenges
Schwierz, F. (2016) · MDPI eBooks · doi:10.3390/books978-3-03842-250-1
Jungthawan, S., & Limpijumnong, S. (2016) · CRC Press eBooks · doi:10.1201/b19461-5
Research Progress of MoS2 Nanosheets
Wang, X., Song, L., Chen, L., et al. (2015)
Quantum Transport in Disordered Graphene-Based Materials
Torres, L. E. F. F., Roche, S., & Charlier, J. (2020) · Cambridge University Press eBooks · doi:10.1017/9781108664462.008
Observation of Van Hove singularities in twisted graphene layers
Li, G., Luican, A., dos Santos, J. M. B. L., et al. (2009) · doi:10.48550/arxiv.0912.2102
Self-citationPaulla, K. K. (2013) · OhioLink ETD Center (Ohio Library and Information Network)
Liu, J., Wang, J., Yao, S., et al. (2026) · Lubricants · doi:10.3390/lubricants14030117
Driven spin transitions in fluorinated single- and bilayer-graphene quantum dots
Żebrowski, D., Peeters, F. M., & Szafran, B. (2017) · Semiconductor Science and Technology · doi:10.1088/1361-6641/aa6df4
Electronic Structure Calculations: The Many-Body Perturbation Theory (MBPT)
Torres, L. E. F. F., Roche, S., & Charlier, J. (2020) · doi:10.1017/9781108664462.014
Cao, W., Wang, X., & Li, W. (2025) · physica status solidi (b) · doi:10.1002/pssb.202500368
Katsnelson, M. I. (2020) · Cambridge University Press eBooks · doi:10.1017/9781108617567.008
Qi, J., Li, Y., Wang, K., et al. (2023) · SSRN Electronic Journal · doi:10.2139/ssrn.4486671
MacIsaac, M., Bavdekar, S., Hennig, R. G., et al. (2026) · Acta Materialia · doi:10.1016/j.actamat.2026.122609
Characteristic Variations of Graphene Field-Effect Transistors Induced by CF4Gas
Park, J., Park, K.-S., Jeong, Y.-S., et al. (2012) · Japanese Journal of Applied Physics · doi:10.7567/jjap.51.081301
Wu, D.-Y., Xu, L.-Y., Wang, Y.-X., et al. (2026) · Surfaces and Interfaces · doi:10.1016/j.surfin.2026.109877
Xu, Y., Li, X., & Ke, S.-H. (2011) · Physical Review B · doi:10.1103/physrevb.84.245433
Electric and Terahertz Characterisation of FET based on BLG/h-BN
Gumenjuk-Sichevska, J. V., Huber, R., Nazarov, A. N., et al. (2019) · IEEE International Conference Nanomaterials: Applications & Properties (NAP) · doi:10.1109/nap47236.2019.216986
Graphene Band Engineering for Spintronics Applications
Thakur, A., & Sarkar, N. (2026) · Journal of Electronic Materials · doi:10.1007/s11664-026-12750-z
Screening of the band gap in electrically biased bilayer graphene: From Hartree to Hartree-Fock
Engdahl, J. N., Krix, Z. E., & Sushkov, O. P. (2025) · Physical review. B./Physical review. B · doi:10.1103/2pdw-n1tt
Colombo, L., Wallace, R. M., & Ruoff, R. S. (2013)
Tunable band gap in functionalized epitaxial graphene
Sapkota, I. P. (2013) · Atlanta University Center Robert W. Woodruff Library (Atlanta University Center Robert W. Woodruff Library)
Li, W., Shi, J., Chang, J., et al. (2026) · RSC Advances · doi:10.1039/d6ra00272b
Ozdemir, S. (2021) · Springer theses · doi:10.1007/978-3-030-88307-2_3
Katsnelson, M. I. (2020) · Cambridge University Press eBooks · doi:10.1017/9781108617567.009
Possible gapless helical edge states in hydrogenated graphene
Jiang, Y.-C., Kariyado, T., & Hu, X. (2023) · Institutional Repositories DataBase (IRDB) · doi:10.48550/arxiv.2312.04195
Metadata
- Authors
- Castro, E. V., Novoselov, K. S., Morozov, S. V., Peres, N. M. R., dos Santos, J. M. B. L., Nilsson, J., Guinea, F., Geim, A. K., & Neto, A. H. C.
- Affiliations
- Universidade do Porto (PT)
- University of Manchester (GB)
- University of Minho (PT)
- Boston University (US)
- Consejo Superior de Investigaciones Científicas (ES)
- ORCID
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2007-11-20
- Volume
- 99
- Issue
- 21
- Pages
- 216802-216802
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2113467957
- Cited by
- 2,033
- References
- 14
- Citations by year
- 2026: 54 · 2025: 60 · 2024: 62 · 2023: 68 · 2022: 85 · 2021: 101 · 2020: 134 · 2019: 102 · 2018: 95 · 2017: 121 · 2016: 134 · 2015: 130 · 2014: 142 · 2013: 146 · 2012: 145
- FWCI
- 55.56
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Locations
- Physical Review Letters (publishedVersion)
- PubMed (publishedVersion)
- Research Explorer (The University of Manchester) (publishedVersion)
- arXiv (Cornell University) (submittedVersion)
- DIGITAL.CSIC (Spanish National Research Council (CSIC)) (submittedVersion, other-oa)
- arXiv (Cornell University)
- Bulletin of the American Physical Society
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Graphene research and applications
- Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Quantum and electron transport phenomena
- Keywords
- bilayer graphene, electric field effects, band gap tuning, gate bias, Shubnikov-de Haas effect, cyclotron mass, tight-binding model, quantum Hall effect, electron density
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
A language model drew the claims from the paper on 2026-10-11, under version 3 of the claim definition (model deepseek-v4.1-flash, prompt extract-v3).
A second model labelled each claim on 2026-10-11 (model jev-1.13-20260917, definition revision gold-guideline-v0.2).
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
