The DOI matches its Crossref record; 1,635 of the 1,635 references it cites were found in a registry or an index.
Electronic properties of two-dimensional systems
Abstract
The electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed. Energy levels, transport properties, and optical properties are considered in some detail, especially for electrons at the (100) silicon-silicon dioxide interface. Other systems are discussed more briefly.
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“However, despite extensive transport experiments on bulk Bi 2 Se 3 since the 1970's [19], there has been no report of a conducting surface layer, and the predicted topological features have not been addressed.”
From Aharonov–Bohm interference in topological insulator nanoribbons (2010) · cites this paper as [19]
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Metadata
- Authors
- Ando, T., Fowler, A. B., & Stern, F.
- Affiliations
- University of Tsukuba (JP)
- Venue
- Reviews of Modern Physics
- Publisher
- American Physical Society (APS)
- Published
- 1982-04-01
- Volume
- 54
- Issue
- 2
- Pages
- 437-672
- ISSN
- 0034-6861 (ISSN-L)
- OpenAlex
- W2043365391
- Cited by
- 7,455
- References
- 1,635
- Citations by year
- 2026: 110 · 2025: 100 · 2024: 119 · 2023: 112 · 2022: 114 · 2021: 127 · 2020: 164 · 2019: 152 · 2018: 141 · 2017: 158 · 2016: 152 · 2015: 174 · 2014: 178 · 2013: 206 · 2012: 184
- FWCI
- 108.29
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Reviews of Modern Physics (publishedVersion)
- Topics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Quantum and electron transport phenomena
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Surface and Thin Film Phenomena
- Keywords
- two-dimensional electron systems, inversion layer, accumulation layer, semiconductor-insulator interface, Si/SiO2 interface, semiconductor heterojunctions, semiconductor superlattices, energy levels, electron transport, optical properties
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