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Electronic properties of two-dimensional systems
Abstract
The electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed. Energy levels, transport properties, and optical properties are considered in some detail, especially for electrons at the (100) silicon-silicon dioxide interface. Other systems are discussed more briefly.
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“However, despite extensive transport experiments on bulk Bi 2 Se 3 since the 1970's [19], there has been no report of a conducting surface layer, and the predicted topological features have not been addressed.”
From Aharonov–Bohm interference in topological insulator nanoribbons (2010) · cites this paper as [19]
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Selective Transmission of High-Frequency Phonons by a Superlattice: The "Dielectric" Phonon Filter
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Quantized Hall resistance and the measurement of the fine-structure constant
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The Excitonic State at the Semiconductor-Semimetal Transition
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Theory of Bound States in a Random Potential
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Ordering in strongly fluctuating condensed matter systems
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Simplified Theory of Electron Correlations in Metals
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Collective modes of spatially separated, two-component, two-dimensional plasma in solids
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Electronic Processes in Zinc Oxide
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Impurity and phonon scattering in layered structures
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Luminescence studies of optically pumped quantum wells in GaAs- AlxGa1−xAs multilayer structures
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On the absorption of infrared radiation by electrons in semiconductor inversion layers
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Many-body corrections to the polarizability of the two-dimensional electron gas
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Theory of Hall Effect in a Two-Dimensional Electron System
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Self-citationThe TFT A New Thin-Film Transistor
Weimer, P. (1962) · Proceedings of the IRE · doi:10.1109/jrproc.1962.288190 · Cited by 298
Nonmetallic Conduction in Electron Inversion Layers at Low Temperatures
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Electron correlations in inversion layers
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InAs-GaSb superlattice energy structure and its semiconductor-semimetal transition
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Zero-Point Energy of an Electron Lattice
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Mobility Anisotropy of Electrons in Inversion Layers on Oxidized Silicon Surfaces
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Study of zone-folding effects on phonons in alternating monolayers of GaAs-AlAs
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Electronic Properties of Flat-Band Semiconductor Heterostructures
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Calculated Temperature Dependence of Mobility in Silicon Inversion Layers
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Self-citationCyclotron Resonance Experiments in Silicon and Germanium
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Modulation of Conductance of Thin Films of Semi-Conductors by Surface Charges
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Density-functional calculation of sub-band structure in accumulation and inversion layers
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Thouless, D. J., & Kirkpatrick, S. (1981) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/14/3/007 · Cited by 267
On the dynamics of electrons in an impure metal
Schmid, A. (1974) · The European Physical Journal A · doi:10.1007/bf01677931 · Cited by 267
On the Number of Bound States in a Central Field of Force
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Quantum Theory of Galvanomagnetic Effect at Extremely Strong Magnetic Fields
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Scattering of Conduction Electrons by Lattice Vibrations in Silicon
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An Auger analysis of the SiO2-Si interface
Johannessen, J. S., Spicer, W. E., & Strausser, Y. E. (1976) · Journal of Applied Physics · doi:10.1063/1.323047 · Cited by 261
Monte Carlo simulation of the classical two-dimensional one-component plasma
Gann, R. C., Chakravarty, S., & Chester, G. V. (1979) · Physical review. B, Condensed matter · doi:10.1103/physrevb.20.326 · Cited by 259
Molecular processes on solid surfaces
Sands, D. E. (1970) · Microchemical Journal · doi:10.1016/0026-265x(70)90054-8 · Cited by 259
Theory of Cyclotron Resonance Lineshape in a Two-Dimensional Electron System
Ando, T. (1975) · Journal of the Physical Society of Japan · doi:10.1143/jpsj.38.989 · Cited by 258
Self-citationCondensation of excitons in germanium and silicon
Combescot, M., & Nozières, P. (1972) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/5/17/014 · Cited by 258
Hopping conduction in a "superlattice"
Tsu, R., & Dohler, G. (1975) · Physical review. B, Solid state · doi:10.1103/physrevb.12.680 · Cited by 258
Topological Excitations in Two-Dimensional Superconductors
Doniach, S., & Huberman, B. A. (1979) · Physical Review Letters · doi:10.1103/physrevlett.42.1169 · Cited by 252
Superconductivity in Many-Valley Semiconductors and in Semimetals
Cohen, M. L. (1964) · Physical Review · doi:10.1103/physrev.134.a511 · Cited by 249
Phonon-Ripplon Coupling and the Two-Dimensional Electron Solid on a Liquid-Helium Surface
Fisher, D. S., Halperin, B. I., & Platzman, P. M. (1979) · Physical Review Letters · doi:10.1103/physrevlett.42.798 · Cited by 244
Dielectric Screening Model for Lattice Vibrations of Diamond-Structure Crystals
Martin, R. M. (1969) · Physical Review · doi:10.1103/physrev.186.871 · Cited by 243
Electronic surface states of liquid helium
Cole, M. W. (1974) · Reviews of Modern Physics · doi:10.1103/revmodphys.46.451 · Cited by 243
Temperature Dependence of the Shear Modulus and Melting of the Two-Dimensional Electron Solid
Morf, R. (1979) · Physical Review Letters · doi:10.1103/physrevlett.43.931 · Cited by 240
Dielectric Screening in a Layered Electron Gas
Visscher, P. B., & Falicov, L. M. (1971) · Physical review. B, Solid state · doi:10.1103/physrevb.3.2541 · Cited by 238
Plasma oscillations of a two-dimensional electron gas in a strong magnetic field
Chiu, K. W., & Quinn, J. J. (1974) · Physical review. B, Solid state · doi:10.1103/physrevb.9.4724 · Cited by 236
Two-dimensional electron gas in a strong magnetic field
Fukuyama, H., Platzman, P. M., & Anderson, P. W. (1979) · Physical review. B, Condensed matter · doi:10.1103/physrevb.19.5211 · Cited by 236
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200 of 413 shown
Cited by
Sorted by citations
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
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Detection of individual gas molecules adsorbed on graphene
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Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
Bychkov, Y. A., & Rashba, E. I. (1984) · Journal of Physics C: Solid State Physics · doi:10.1088/0022-3719/17/33/015 · Cited by 2,972
Aharonov–Bohm interference in topological insulator nanoribbons
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The fractional quantum Hall effect
Stormer, H. L., Tsui, D. C., & Gossard, A. C. (1999) · Reviews of Modern Physics · doi:10.1103/revmodphys.71.s298 · Cited by 483
Metadata
- Authors
- Ando, T., Fowler, A. B., & Stern, F.
- Affiliations
- University of Tsukuba (JP)
- Venue
- Reviews of Modern Physics
- Publisher
- American Physical Society (APS)
- Published
- 1982-04-01
- Volume
- 54
- Issue
- 2
- Pages
- 437-672
- ISSN
- 0034-6861 (ISSN-L)
- OpenAlex
- W2043365391
- Cited by
- 7,455
- References
- 1,635
- Citations by year
- 2026: 110 · 2025: 100 · 2024: 119 · 2023: 112 · 2022: 114 · 2021: 127 · 2020: 164 · 2019: 152 · 2018: 141 · 2017: 158 · 2016: 152 · 2015: 174 · 2014: 178 · 2013: 206 · 2012: 184
- FWCI
- 108.29
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Reviews of Modern Physics (publishedVersion)
- Topics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Quantum and electron transport phenomena
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Surface and Thin Film Phenomena
- Keywords
- two-dimensional electron systems, inversion layer, accumulation layer, semiconductor-insulator interface, Si/SiO2 interface, semiconductor heterojunctions, semiconductor superlattices, energy levels, electron transport, optical properties
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