Cited by 7,455Quantum and electron transport phenomenaSemiconductor materials and devicesSurface and Thin Film Phenomena

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Electronic properties of two-dimensional systems

Ando, Tsuneya, Fowler, Alan B., Stern, Frank·1982·Reviews of Modern Physics

Abstract

The electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed. Energy levels, transport properties, and optical properties are considered in some detail, especially for electrons at the (100) silicon-silicon dioxide interface. Other systems are discussed more briefly.

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Metadata

Authors
Ando, T., Fowler, A. B., & Stern, F.
Affiliations
University of Tsukuba (JP)
Venue
Reviews of Modern Physics
Published
1982-04-01
Volume
54
Issue
2
Pages
437-672
ISSN
0034-6861 (ISSN-L)
OpenAlex
W2043365391
Cited by
7,455
References
1,635
Citations by year
2026: 110 · 2025: 100 · 2024: 119 · 2023: 112 · 2022: 114 · 2021: 127 · 2020: 164 · 2019: 152 · 2018: 141 · 2017: 158 · 2016: 152 · 2015: 174 · 2014: 178 · 2013: 206 · 2012: 184
FWCI
108.29
Type
journal article
Language
en
Open access
closed
Locations
Reviews of Modern Physics (publishedVersion)
Topics
  • Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Quantum and electron transport phenomena
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
  • Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Surface and Thin Film Phenomena
Keywords
two-dimensional electron systems, inversion layer, accumulation layer, semiconductor-insulator interface, Si/SiO2 interface, semiconductor heterojunctions, semiconductor superlattices, energy levels, electron transport, optical properties

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