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A study of phase noise in CMOS oscillators

Razavi, B.·1996·IEEE Journal of Solid-State Circuits

Abstract

This paper presents a study of phase noise in two inductorless CMOS oscillators. First-order analysis of a linear oscillatory system leads to a noise shaping function and a new definition of Q. A linear model of CMOS ring oscillators is used to calculate their phase noise, and three phase noise phenomena, namely, additive noise, high-frequency multiplicative noise, and low-frequency multiplicative noise, are identified and formulated. Based on the same concepts, a CMOS relaxation oscillator is also analyzed. Issues and techniques related to simulation of noise in the time domain are described, and two prototypes fabricated in a 0.5-/spl mu/m CMOS technology are used to investigate the accuracy of the theoretical predictions. Compared with the measured results, the calculated phase noise values of a 2-GHz ring oscillator and a 900-MHz relaxation oscillator at 5 MHz offset have an error of approximately 4 dB.

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Metadata

Authors
Razavi, B.
Venue
IEEE Journal of Solid-State Circuits
Published
1996-03
Volume
31
Issue
3
Pages
331-343
ISSN
0018-9200 (ISSN-L)
OpenAlex
W2062327827
Cited by
1,021
References
1
FWCI
19.90
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: A study of phase noise in CMOS oscillators. https://app.cochat.ai/papers/10.1109/4.494195
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Razavi, B. (1996). A study of phase noise in CMOS oscillators. IEEE Journal of Solid-State Circuits. https://doi.org/10.1109/4.494195

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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