The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
Abstract
The deposition of silicon carbide thin films and the associated technologies of impurity incorporation, etching, surface chemistry, and electrical contacts for fabrication of solid-state devices capable of operation at temperatures to 925 K are addressed. The results of several research programs in the United States, Japan and the Soviet Union, and the remaining challenges related to the development of silicon carbide for microelectronics are presented and discussed. It is concluded that the combination of alpha -SiC on alpha -SiC appears especially viable for device fabrication. In addition, considerable progress in the understanding of the surface science, ohmic and Schottky contacts, and dry etching have recently been made. The combination of these advances has allowed continual improvement in Schottky diode p-n junction, MESFET, MOSFET, HBT, and LED devices.>
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Citations
Cites
Thermal conductivity and electrical properties of 6 H silicon carbide
Burgemeister, E. A., von Muench, W., & Pettenpaul, E. (1979) · Journal of Applied Physics · doi:10.1063/1.326720 · Cited by 168
Cited by
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
Morkoç, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., & Burns, M. (1994) · Journal of Applied Physics · doi:10.1063/1.358463 · Cited by 2,733
Material Science and Device Physics in SiC Technology for High-Voltage Power Devices
Kimoto, T. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.040103 · Cited by 1,176
High-temperature electronics - a role for wide bandgap semiconductors?
Neudeck, P. G., Okojie, R. S., & Chen, L.-Y. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021571 · Cited by 1,050
SiC devices: physics and numerical simulation
Ruff, M., Mitlehner, H., & Helbig, R. (1994) · IEEE Transactions on Electron Devices · doi:10.1109/16.293319 · Cited by 508
Performance limiting micropipe defects in silicon carbide wafers
Neudeck, P. G., & Powell, J. A. (1994) · IEEE Electron Device Letters · doi:10.1109/55.285372 · Cited by 309
Metadata
- Authors
- Davis, R. F., Kelner, G., Shur, M., Palmour, J. W., & Edmond, J. A.
- Venue
- Proceedings of the IEEE
- Published
- 1991-05
- Volume
- 79
- Issue
- 5
- Pages
- 677-701
- ISSN
- 0018-9219 (ISSN-L)
- OpenAlex
- W2134158954
- Cited by
- 407
- References
- 1
- FWCI
- 26.74
- Type
- journal article
- Language
- en
- Open access
- closed
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- Davis, R. F., Kelner, G., Shur, M., Palmour, J. W., & Edmond, J. A. (1991). Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide. Proceedings of the IEEE. https://doi.org/10.1109/5.90132
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
