SiC Device Junction Temperature Online Monitoring
Abstract
This paper presents a SiC device junction temperature monitoring method. The device internal gate resistance has a consistent temperature dependence. With different junction temperature conditions, the equivalent gate loop impedance will be different and change the gate driver currents. Through proper signal processing, this gate loop current peak value can be captured and utilized as the junction temperature indicator. The concept and feasibility was verified through both simulation and experimental results.
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Internal gate resistance-based temperature measurements are proposed in [71], [87]-[89].
“In [71], [87][89], the internal gate resistance-based temperature measurements are proposed.”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [71]
Internal gate resistance is highly sensitive to noise and has relatively low linearity.
“This parameter is highly sensitive to noise and has relatively low linearity.”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [71]
Cites
Condition Monitoring for Device Reliability in Power Electronic Converters: A Review
Yang, S., Xiang, D., Bryant, A., Mawby, P., Ran, L., & Tavner, P. (2010) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2010.2049377 · Cited by 1,278 · see citing works
Improved Reliability of Power Modules: A Review of Online Junction Temperature Measurement Methods
Baker, N., Liserre, M., Dupont, L., & Avenas, Y. (2014) · IEEE Industrial Electronics Magazine · doi:10.1109/mie.2014.2312427 · Cited by 232 · see citing works
Real-Time Compact Thermal Models for Health Management of Power Electronics
Musallam, M., & Johnson, C. M. (2010) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2010.2040634 · Cited by 197 · see citing works
Real-Time Temperature Estimation for Power MOSFETs Considering Thermal Aging Effects
Chen, H., Ji, B., Pickert, V., & Cao, W. (2014) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2013.2292547 · Cited by 192 · see citing works
IGBT Junction Temperature Measurement via Peak Gate Current
Baker, N., Munk‐Nielsen, S., Iannuzzo, F., & Liserre, M. (2015) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2015.2464714 · Cited by 166 · see citing works
Temperature-dependent characteristics of polysilicon and diffused resistors
Chuang, H.-M., Thei, K.-B., Tsai, S., et al. (2003) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2003.813472 · Cited by 70 · see citing works
Reliability odometer of power semiconductor device used for high performance high power amplifiers
Xu, F., Sabate, J. A., Xi, L., Wang, R., Frigo, L., Wiza, M., Syedsaad, A., & Freeman, M. (2016) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2016.7855389 · Cited by 4 · see citing works
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Evaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets
Yang, F., Ugur, E., & Akin, B. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2950311 · Cited by 121 · see citing works
AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters
Farhadi, M., Vankayalapati, B. T., Sajadi, R., & Akin, B. (2023) · IEEE Transactions on Vehicular Technology · doi:10.1109/tvt.2023.3271251 · Cited by 24 · see citing works
“In [71], [87], [88], [89], the internal gate resistance-based temperature measurements are proposed.”
Background
- Authors
- Wang, R., Sabate, J., Mainali, K., Sadilek, T., Losee, P., & Singh, Y.
- Affiliations
- General Electric (United States) (US)
- Venue
- 2018 IEEE Energy Conversion Congress and Exposition (ECCE)
- Publisher
- IEEE
- Published
- 2018-09
- Pages
- 387-392
- OpenAlex
- W2903783614
- Cited by
- 19
- References
- 7
- Citations by year
- 2025: 1 · 2024: 5 · 2023: 3 · 2021: 2 · 2020: 7 · 2019: 1
- FWCI
- 3.99
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- IEEE Energy Conversion Congress and Exposition (ECCE) (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Radiation Effects in Electronics
- Keywords
- silicon carbide devices, junction temperature monitoring, power semiconductor devices
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