The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.
Resistive Random Access Memory (ReRAM) Based on Metal Oxides
Abstract
In this paper, we review the recent progress in the resistive random access memory (ReRAM) technology, one of the most promising emerging nonvolatile memories, in which both electronic and electrochemical effects play important roles in the nonvolatile functionalities. First, we provide a brief historical overview of the research in this field. We also provide a technological overview and the epoch-making achievements, followed by an account of the current understanding of both bipolar and unipolar ReRAM operations. Finally, we summarize the challenges facing the ReRAM technology as it moves toward the beyond-2X-nm generation of nonvolatile memories and the so-called beyond complementary metal-oxide-semiconductor (CMOS) device.
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Cites
Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,828
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Memristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Electrical phenomena in amorphous oxide films
Dearnaley, G., Stoneham, A. M., & Morgan, D. V. (1970) · Reports on Progress in Physics · doi:10.1088/0034-4885/33/3/306 · Cited by 731
High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application
Yoshida, C., Tsunoda, K., Noshiro, H., & Sugiyama, Y. (2007) · Applied Physics Letters · doi:10.1063/1.2818691 · Cited by 271
Observation of electric-field induced Ni filament channels in polycrystalline NiOx film
Park, G.-S., Li, X.-S., Kim, D.-C., Jung, R.-J., Lee, M.-J., & Seo, S. (2007) · Applied Physics Letters · doi:10.1063/1.2813617 · Cited by 238
Cited by
Memristive devices for computing
Yang, J. J., Strukov, D. B., & Stewart, D. R. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.240 · Cited by 3,885
Wong, H.-S. P., Lee, H.-Y., Yu, S., Chen, Y.-S., Wu, Y., Chen, P.-S., Lee, B., Chen, F. T., & Tsai, M.-J. (2012) · Proceedings of the IEEE · doi:10.1109/jproc.2012.2190369 · Cited by 2,757
A Review on Conduction Mechanisms in Dielectric Films
Chiu, F.-C. (2014) · Advances in Materials Science and Engineering · doi:10.1155/2014/578168 · Cited by 1,574
Synaptic electronics: materials, devices and applications
Kuzum, D., Yu, S., & Philip Wong, H.-S. (2013) · Nanotechnology · doi:10.1088/0957-4484/24/38/382001 · Cited by 1,258
Resistive switching materials for information processing
Wang, Z., Wu, H., Burr, G. W., Hwang, C. S., Wang, K. L., Xia, Q., & Yang, J. J. (2020) · Nature Reviews Materials · doi:10.1038/s41578-019-0159-3 · Cited by 1,214
Metadata
- Authors
- Akinaga, H., & Shima, H.
- Venue
- Proceedings of the IEEE
- Published
- 2010-12
- Volume
- 98
- Issue
- 12
- Pages
- 2237-2251
- ISSN
- 0018-9219 (ISSN-L)
- 1558-2256
- OpenAlex
- W2033811947
- Cited by
- 1,037
- References
- 7
- FWCI
- 34.89
- Type
- journal article
- Language
- en
- Open access
- closed
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
