The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films
Abstract
Thin-film HfO2is a promising gate dielectric material that will influence thermal conduction in modern transistors. This letter reports the temperature dependence of the intrinsic thermal conductivity and interface resistances of 56-200-Aring-thick HfO2films. A picosecond pump-probe thermoreflectance technique yields room-temperature intrinsic thermal conductivity values between 0.49 and 0.95 W/(mmiddotK). The intrinsic thermal conductivity and interface resistance depend strongly on the film-thickness-dependent microstructure.
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Citations
Cites
Analysis of heat flow in layered structures for time-domain thermoreflectance
Cahill, D. G. (2004) · Review of Scientific Instruments · doi:10.1063/1.1819431 · Cited by 1,543
Thermal conductance of epitaxial interfaces
Costescu, R. M., Wall, M. A., & Cahill, D. G. (2003) · Physical Review B · doi:10.1103/physrevb.67.054302 · Cited by 486
Thermal conductivity of amorphous solids
Freeman, J. J., & Anderson, A. C. (1986) · Physical Review B · doi:10.1103/physrevb.34.5684 · Cited by 296
An optical pump-probe technique for measuring the thermal conductivity of liquids
Schmidt, A., Chiesa, M., Chen, X., & Chen, G. (2008) · Review of Scientific Instruments · doi:10.1063/1.2937458 · Cited by 184
Cited by
Nanoscale thermal transport. II. 2003–2012
Cahill, D. G., Braun, P. V., Chen, G., Clarke, D. R., Fan, S., Goodson, K. E., Keblinski, P., King, W. P., Mahan, G. D., Majumdar, A., et al. (2014) · Applied Physics Reviews · doi:10.1063/1.4832615 · Cited by 1,763
Self-citationNanoscale heat transfer – from computation to experiment
Luo, T., & Chen, G. (2013) · Physical Chemistry Chemical Physics · doi:10.1039/c2cp43771f · Cited by 273
Palumbo, F., Wen, C., Lombardo, S., Pazos, S., Aguirre, F., Eizenberg, M., Hui, F., & Lanza, M. (2020) · Advanced Functional Materials · doi:10.1002/adfm.201900657 · Cited by 268
Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching
Padovani, A., Larcher, L., Pirrotta, O., Vandelli, L., & Bersuker, G. (2015) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2015.2418114 · Cited by 219
Scott, E. A., Gaskins, J. T., King, S. W., & Hopkins, P. E. (2018) · APL Materials · doi:10.1063/1.5021044 · Cited by 139
Metadata
- Authors
- Panzer, M. A., Shandalov, M., Rowlette, J. A., Oshima, Y., Chen, Y. W., McIntyre, P. C., & Goodson, K. E.
- Venue
- IEEE Electron Device Letters
- Published
- 2009-12
- Volume
- 30
- Issue
- 12
- Pages
- 1269-1271
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W2138421559
- Cited by
- 184
- References
- 4
- FWCI
- 3.03
- Type
- journal article
- Language
- en
- Open access
- closed
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- Panzer, M. A., Shandalov, M., Rowlette, J. A., Oshima, Y., Chen, Y. W., McIntyre, P. C., & Goodson, K. E. (2009). Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films. IEEE Electron Device Letters. https://doi.org/10.1109/led.2009.2032937
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