Thermal conductivity and thermal boundary resistance of atomic layer deposited high- k dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films on silicon

Scott, Ethan A.; Gaskins, John T.; King, Sean W.; Hopkins, Patrick E.

doi:10.1063/1.5021044

Thermal conductivity and thermal boundary resistance of atomic layer deposited high- k dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films on silicon

The need for increased control of layer thickness and uniformity as device dimensions shrink has spurred increased use of atomic layer deposition (ALD) for thin film growth. The ability to deposit high dielectric constant (high-k) films via ALD has allowed for their widespread use in a swath of o…