The DOI matches its Crossref record; 8 of the 8 references it cites were found in a registry or an index.
CMOS Scaling Trends and Beyond
Abstract
Scaling transistors and following Moore's law have served the industry well for more than 50 years in providing integrated circuits that are denser, cheaper, higher performance, and lower power. And despite occasional reports of its demise, Moore's law is alive and well. But progress in scaling CMOS has not come easily. We've had to continually invent and introduce new materials and new device structures to deliver the performance, power, and cost improvements expected of each new technology generation. This article describes trends in CMOS scaling over the past decade and discusses some of the new device options and technology directions being explored to continue scaling into the future.
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Citations
Cites
Cramming More Components onto Integrated Circuits (1965)
Moore, G. (2021) · Ideas That Created the Future · doi:10.7551/mitpress/12274.003.0027 · Cited by 6,241
Cramming More Components Onto Integrated Circuits
Moore, G. E. (1998) · Proceedings of the IEEE · doi:10.1109/jproc.1998.658762 · Cited by 5,926
Design of ion-implanted MOSFET's with very small physical dimensions
Dennard, R. H., Gaensslen, F. H., Yu, H.-N., Rideout, V. L., Bassous, E., & LeBlanc, A. R. (1974) · IEEE Journal of Solid-State Circuits · doi:10.1109/jssc.1974.1050511 · Cited by 3,548
Progress in Digital Integrated Electronics
Moore, G. E. (1975) · Technical digest - International Electron Devices Meeting/Technical digest · Cited by 910
Mistry, K., Chau, R., Choi, C.-H., Ding, G., Fischer, K., Ghani, T., Grover, R., Han, W., Hanken, D., Hattendorf, M., et al. (2007) · 2007 IEEE International Electron Devices Meeting · doi:10.1109/iedm.2007.4418914 · Cited by 854
Auth, C., Allen, C., Blattner, A., Bergstrom, D., Brazier, M., Bost, M., Buehler, M., Chikarmane, V., Ghani, T., Glassman, T., et al. (2012) · 2012 Symposium on VLSI Technology (VLSIT) · doi:10.1109/vlsit.2012.6242496 · Cited by 782
Natarajan, S., Agostinelli, M., Akbar, S., Bost, M., Bowonder, A., Chikarmane, V., Chouksey, S., Dasgupta, A., Fischer, K., Fu, Q., et al. (2014) · 2014 IEEE International Electron Devices Meeting · doi:10.1109/iedm.2014.7046976 · Cited by 543
Overview of Beyond-CMOS Devices and a Uniform Methodology for Their Benchmarking
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Self-citation
Cited by
Neuromemristive Circuits for Edge Computing: A Review
Krestinskaya, O., James, A. P., & Chua, L. O. (2020) · IEEE Transactions on Neural Networks and Learning Systems · doi:10.1109/tnnls.2019.2899262 · Cited by 319
Yin, S., Sun, X., Yu, S., & Seo, J.-S. (2020) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2020.3015178 · Cited by 171
“Although SRAM technology followed CMOS scaling well [12], SRAM density (∼150 F(2) per bitcell) and on-chip SRAM capacity (a few MB) are insufficient to hold a large number of DNN parameters (even with binary precision), leakage current is”
BackgroundWinograd convolution: a perspective from fault tolerance
Xue, X., Huang, H., Liu, C., Luo, T., Zhang, L., & Wang, Y. (2022) · Proceedings of the 59th ACM/IEEE Design Automation Conference · doi:10.1145/3489517.3530531 · Cited by 10
Metadata
- Authors
- Bohr, M. T., & Young, I. A.
- Venue
- IEEE Micro
- Published
- 2017-11
- Volume
- 37
- Issue
- 6
- Pages
- 20-29
- ISSN
- 0272-1732 (ISSN-L)
- OpenAlex
- W2769815858
- Cited by
- 336
- References
- 8
- FWCI
- 9.40
- Type
- journal article
- Language
- en
- Open access
- closed
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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