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Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's
Abstract
The charge coupling between the front and back gates of thin-film silicon-on-insulator (SOI: e.g,, recrystallized Si on SiO2) MOSFET's is analyzed, and closed-form expressions for the threshold voltage under all possible steady-state conditions are derived. The expressions clearly show the dependence of the linear-region channel conductance on the back-gate bias and on the device parameters, including those of the back silicon-insulator interface. The analysis is supported by current-voltage measurements of laser-recrystallized SOI MOSFET's. The results suggest how the back-gate bias may be used to optimize the performance of the SOI MOSFET in particular applications.
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Research works printed but not linked: 15
- 10.1016/0038-1101(82)90065-X · doi:10.1016/0038-1101(82)90065-x
- lam, 0, private communication
- lim, 0, unpublished work
- wai, 1982, device fabrication in {100} silicon-on-oxide produced by a scanning cw-laser-induced lateral seeding technique, IEEE Transactions on Electron Devices, 29, 389, 10.1109/T-ED.1982.20713 · doi:10.1109/t-ed.1982.20713
- 10.1016/0038-1101(82)90148-4 · DOI
- fossum, 1983, Effects of grain boundaries on channel conduction in thin-film SOI MOSFET's, SPIE Tech Symp, 385
- gibbons, 1980, one-gate-wide cmos inverter on laser-recrystallized polysilicon, IEEE Electron Device Letters, 1, 117, 10.1109/EDL.1980.25252 · doi:10.1109/edl.1980.25252
- lam, 1982, VLSI Electronics Microstructure Science, 4
- sano, 1980, a two-dimensional analysis for mosfet's fabricated on buried sio2layer, IEEE Transactions on Electron Devices, 27, 2043, 10.1109/T-ED.1980.20147 · doi:10.1109/t-ed.1980.20147
- 10.1016/0038-1101(80)90020-9 · doi:10.1016/0038-1101(80)90020-9
- sano, 1982, a buried channel/surface channel cmos ic isolated by an implanted silicon dioxide layer, IEEE Transactions on Electron Devices, 29, 459, 10.1109/T-ED.1982.20723 · doi:10.1109/t-ed.1982.20723
- barth, 1980, Dielectric isolation technology for bipolar and MOS integrated circuits
- 10.1063/1.92603 · doi:10.1063/1.92603
- lam, 1980, characteristics of mosfets fabricated in laser-recrystallized polysilicon islands with a retaining wall structure on an insulating substrate, IEEE Electron Device Letters, 1, 206, 10.1109/EDL.1980.25290 · doi:10.1109/edl.1980.25290
- sze, 1981, Physics of Semiconductor Devices
Cited by
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Kuhn, K. J., Giles, M. D., Becher, D., Kolar, P., Kornfeld, A., Kotlyar, R., Ma, S. T., Maheshwari, A., & Mudanai, S. (2011) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2011.2121913 · Cited by 373
Ultimately thin double-gate SOI MOSFETs
Ernst, T., Cristoloveanu, S., Ghibaudo, G., Ouisse, T., Horiguchi, S., Ono, Y., Takahashi, Y., & Murase, K. (2003) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2003.811371 · Cited by 245
Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects
Eminente, S., Cristoloveanu, S., Clerc, R., Ohata, A., & Ghibaudo, G. (2007) · Solid-State Electronics · doi:10.1016/j.sse.2007.01.016 · Cited by 139
Jang, H.-J., & Cho, W.-J. (2014) · Scientific Reports · doi:10.1038/srep05284 · Cited by 103
Metadata
- Authors
- Lim, H.-K., & Fossum, J. G.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 1983-10
- Volume
- 30
- Issue
- 10
- Pages
- 1244-1251
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W2119143252
- Cited by
- 695
- References
- 0
- FWCI
- 8.89
- Type
- journal article
- Language
- en
- Open access
- closed
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- Lim, H.-K., & Fossum, J. G. (1983). Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's. IEEE Transactions on Electron Devices. https://doi.org/10.1109/t-ed.1983.21282
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