The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Low-Temperature Sintered Nanoscale Silver as a Novel Semiconductor Device-Metallized Substrate Interconnect Material
Abstract
A nanoscale silver paste containing 30-nm silver particles that can be sintered at 280degC was made for interconnecting semiconductor devices. Sintering of the paste produced a microstructure containing micrometer-size porosity and a relative density of around 80%. Electrical and thermal conductivities of around 2.6times105(Omegamiddotcm)-1and 2.4W/K-cm, respectively, were obtained, which are much higher than those of the solder alloys that are currently used for die attachment and/or flip-chip interconnection of power semiconductor devices. The sintered porous silver had an apparent elastic modulus of about 9GPa, which is substantially lower than that of bulk silver, as well as most solder materials. The lower elastic modulus of the porous silver may be beneficial in achieving a more reliable joint between the device and substrate because of increased compliance that can better accommodate stress arising from thermal expansion mismatch
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Citations
Cites
Flash Method of Determining Thermal Diffusivity, Heat Capacity, and Thermal Conductivity
Parker, W. J., Jenkins, R. J., Butler, C. P., & Abbott, G. L. (1961) · Journal of Applied Physics · doi:10.1063/1.1728417 · Cited by 3,978 · cited 1×
“determined by the Archimedes method, differential scanning calorimetry (DSC), and laser flash method [17], [18] (ASTM method E1461-01), respectively.”
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Cited by
Die Attach Materials for High Temperature Applications: A Review
Manikam, V. R., & Cheong, K. Y. (2011) · IEEE Transactions on Components, Packaging and Manufacturing Technology · doi:10.1109/tcpmt.2010.2100432 · Cited by 478
High-Temperature Operation of SiC Power Devices by Low-Temperature Sintered Silver Die-Attachment
Bai, J. G., Yin, J., Zhang, Z., Lu, G.-Q., & van Wyk, J. D. (2007) · IEEE Transactions on Advanced Packaging · doi:10.1109/tadvp.2007.898628 · Cited by 177
Self-citationTransient Thermal Performance of IGBT Power Modules Attached by Low-Temperature Sintered Nanosilver
Chen, G., Han, D., Mei, Y.-H., Cao, X., Wang, T., Chen, X., & Lu, G.-Q. (2012) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2011.2173573 · Cited by 71
Self-citationReview of Die-Attach Materials for SiC High-Temperature Packaging
Hou, F., Sun, Z., Su, M., Fan, J., You, X., Li, J., Wang, Q., Cao, L., & Zhang, G. (2024) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2024.3417529 · Cited by 52
Metadata
- Authors
- Bai, J. G., Zhang, Z. Z., Calata, J. N., & Lu, G.-Q.
- Venue
- IEEE Transactions on Components and Packaging Technologies
- Published
- 2006-09
- Volume
- 29
- Issue
- 3
- Pages
- 589-593
- ISSN
- 1521-3331 (ISSN-L)
- OpenAlex
- W2102914914
- Cited by
- 375
- References
- 1
- FWCI
- 10.46
- Type
- journal article
- Language
- en
- Open access
- closed
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- The paper
- Bai, J. G., Zhang, Z. Z., Calata, J. N., & Lu, G.-Q. (2006). Low-Temperature Sintered Nanoscale Silver as a Novel Semiconductor Device-Metallized Substrate Interconnect Material. IEEE Transactions on Components and Packaging Technologies. https://doi.org/10.1109/tcapt.2005.853167
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