The DOI matches its Crossref record; 8 of the 8 references it cites were found in a registry or an index.
Low-Temperature Sintered Nanoscale Silver as a Novel Semiconductor Device-Metallized Substrate Interconnect Material
Abstract
A nanoscale silver paste containing 30-nm silver particles that can be sintered at 280degC was made for interconnecting semiconductor devices. Sintering of the paste produced a microstructure containing micrometer-size porosity and a relative density of around 80%. Electrical and thermal conductivities of around 2.6times105(Omegamiddotcm)-1and 2.4W/K-cm, respectively, were obtained, which are much higher than those of the solder alloys that are currently used for die attachment and/or flip-chip interconnection of power semiconductor devices. The sintered porous silver had an apparent elastic modulus of about 9GPa, which is substantially lower than that of bulk silver, as well as most solder materials. The lower elastic modulus of the porous silver may be beneficial in achieving a more reliable joint between the device and substrate because of increased compliance that can better accommodate stress arising from thermal expansion mismatch
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Cites
Flash Method of Determining Thermal Diffusivity, Heat Capacity, and Thermal Conductivity
Parker, W. J., Jenkins, R. J., Butler, C. P., & Abbott, G. L. (1961) · Journal of Applied Physics · doi:10.1063/1.1728417 · Cited by 3,978 · cited 1×
“determined by the Archimedes method, differential scanning calorimetry (DSC), and laser flash method [17], [18] (ASTM method E1461-01), respectively.”
MethodHigh-temperature electronics - a role for wide bandgap semiconductors?
Neudeck, P. G., Okojie, R. S., & Chen, L.-Y. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021571 · Cited by 1,050
SiC power-switching devices-the second electronics revolution?
Cooper, J. A., & Agarwal, A. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021561 · Cited by 394
Zhang, Z., & Lu, G.-Q. (2002) · IEEE Transactions on Electronics Packaging Manufacturing · doi:10.1109/tepm.2002.807719 · Cited by 221
Self-citationSilver-indium joints produced at low temperature for high temperature devices
Chuang, R. W., & Lee, C. C. (2002) · IEEE Transactions on Components and Packaging Technologies · doi:10.1109/tcapt.2002.801113 · Cited by 124
SiC devices for advanced power and high-temperature applications
Wondrak, W., Held, R., Niemann, E., & Schmid, U. (2001) · IEEE Transactions on Industrial Electronics · doi:10.1109/41.915409 · Cited by 124
Endriz, J. G., Vakili, M. A., Browder, G. S., DeVito, M. A., Haden, J. M., Harnagel, G. L., Plano, W. E., Sakamoto, M., WELCH, D. F., Willing, S., et al. (1992) · IEEE Journal of Quantum Electronics · doi:10.1109/3.135214 · Cited by 110
Hasselman, D. P. H., & Donaldson, K. Y. (1990) · International Journal of Thermophysics · doi:10.1007/bf00500847 · Cited by 41
Cited by
Die Attach Materials for High Temperature Applications: A Review
Manikam, V. R., & Cheong, K. Y. (2011) · IEEE Transactions on Components, Packaging and Manufacturing Technology · doi:10.1109/tcpmt.2010.2100432 · Cited by 478
Survey of High-Temperature Reliability of Power Electronics Packaging Components
Khazaka, R., Mendizabal, L., Henry, D., & Hanna, R. (2015) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2014.2357836 · Cited by 386
A Review on Die Attach Materials for SiC-Based High-Temperature Power Devices
Chin, H. S., Cheong, K. Y., & Ismail, A. B. (2010) · Metallurgical and Materials Transactions B · doi:10.1007/s11663-010-9365-5 · Cited by 337
Are Sintered Silver Joints Ready for Use as Interconnect Material in Microelectronic Packaging?
Siow, K. S. (2014) · Journal of Electronic Materials · doi:10.1007/s11664-013-2967-3 · Cited by 317
High-Temperature Operation of SiC Power Devices by Low-Temperature Sintered Silver Die-Attachment
Bai, J. G., Yin, J., Zhang, Z., Lu, G.-Q., & van Wyk, J. D. (2007) · IEEE Transactions on Advanced Packaging · doi:10.1109/tadvp.2007.898628 · Cited by 177
Self-citation
Metadata
- Authors
- Bai, J. G., Zhang, Z. Z., Calata, J. N., & Lu, G.-Q.
- Venue
- IEEE Transactions on Components and Packaging Technologies
- Published
- 2006-09
- Volume
- 29
- Issue
- 3
- Pages
- 589-593
- ISSN
- 1521-3331 (ISSN-L)
- OpenAlex
- W2102914914
- Cited by
- 375
- References
- 8
- FWCI
- 10.46
- Type
- journal article
- Language
- en
- Open access
- closed
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
