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Three Fingerprints of Memristor
Abstract
This paper illustrates that for a device to be a memristor it should exhibit three characteristic fingerprints: 1) When driven by a bipolar periodic signal the device must exhibit a “pinched hysteresis loop” in the voltage-current plane, assuming the response is periodic. 2) Starting from some critical frequency, the hysteresis lobe area should decrease monotonically as the excitation frequency increases, and 3) the pinched hysteresis loop should shrink to a single-valued function when the frequency tends to infinity. Examples of memristors exhibiting these three fingerprints, along with non-memristors exhibiting only a subset of these fingerprints are also presented. In addition, two different types of pinched hysteresis loops; the transversal (self-crossing) and the non-transversal (tangential) loops exhibited by memristors are also discussed with its identification criterion.
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“Numerous examples of pinched hysteresis loops of memristors can be found in [3], [13], [22].”
From Everything You Wish to Know About Memristors But Are Afraid to Ask (2015) · cites this paper as [13]
Citations
Cites
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Chua, L. (1971) · IEEE Transactions on Circuit Theory · doi:10.1109/tct.1971.1083337 · Cited by 10,268
Self-citationMemristive devices and systems
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Self-citationResistance switching memories are memristors
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Self-citationMemory effects in complex materials and nanoscale systems
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“For the examples presented in [13] it was noted that non-transversal loops occurred when and are even functions of , where , but this was not a necessary condition as transversal pinched hysteresis loops were observed in unipolar resistance switching devices where and were even functions of .”
BackgroundHODGKIN–HUXLEY AXON IS MADE OF MEMRISTORS
CHUA, L., SBITNEV, V., & KIM, H. (2012) · International Journal of Bifurcation and Chaos · doi:10.1142/s021812741230011x · Cited by 319
Self-citationNonlinear circuit foundations for nanodevices, part I: the four-element torus
Chua, L. O. (2003) · Proceedings of the IEEE · doi:10.1109/jproc.2003.818319 · Cited by 263
Self-citationPinched hysteretic loops of ideal memristors, memcapacitors and meminductors must be ‘self-crossing’
Biolek, D., Biolek, Z., & Biolkova, V. (2011) · Electronics Letters · doi:10.1049/el.2011.2913 · Cited by 145
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Items 101–200 of 541
A Generic Voltage-Controlled Discrete Memristor Model and its Application in Chaotic MapPreprint
Zhong, H.-Y., Li, G.-D., & Xu, X.-L. (2022) · Social Science Research Network · doi:10.2139/ssrn.4088197 · Cited by 42
Memristive Non-Volatile Memory Based on Graphene Materials
Shen, Z., Zhao, C., Qi, Y., Mitrović, I. Z., Yang, L., Wen, J., Huang, Y., Li, P., & Zhao, C. (2020) · Micromachines · doi:10.3390/mi11040341 · Cited by 49
“To be more precise, the definition of a memristor is related to not only the flux as a magnetic magnitude but also the mathematical magnitude corresponding to the time-integral of the voltage across the device [101,102,104,106].”
BackgroundSun, J., & Shen, Y. (2015) · IEEE Transactions on Cybernetics · doi:10.1109/tcyb.2014.2350977 · Cited by 42
“In this paper, quasi-ideal memory systems must be memory systems and have the three fingerprints [48] of a memristor.”
InfluentialA Memristor Emulation in 180-nm CMOS Process for Spiking Signal Generation and Chaos Application
Kumar, P., Ranjan, R., & Kang, S. (2024) · IEEE Transactions on Circuits and Systems Part 1: Regular Papers · doi:10.1109/tcsi.2023.3348695 · Cited by 40
“The ideal memristor can be either charge-controlled or flux-controlled as described by Adhikari et al. in [34].”
MethodElectrical Nonlinearity Emulation Technique for Current-Controlled Memristive Devices
Alharbi, A. G., Fouda, M., Khalifa, Z. J., & Chowdhury, M. (2017) · IEEE Access · doi:10.1109/access.2017.2695402 · Cited by 40
“Many of these emulators do not exhibit or follow the three characteristic fingerprints of a memristor, which are discussed in [39].”
BackgroundMannan, Z. I., Choi, H., Rajamani, V., Kim, H., & Chua, L. O. (2017) · International Journal of Bifurcation and Chaos · doi:10.1142/s0218127417300117 · Cited by 50
“The algorithm for choosing x(0) such that the response has no transient component is given in [Adhikari et al., 2013].”
MethodSelf-citationA New Circuit for Emulating Memristors Using Inductive Coupling
Yu, D., Zheng, C.-Y., Iu, H., Fernando, T., & Chua, L. (2017) · IEEE Access · doi:10.1109/access.2017.2649573 · Cited by 40
“These dynamic phenomena are in good agreement with the unique fingerprints necessarily required for identifying a device asMR [49], [50].”
ResultSelf-citationReliable Modeling of Ideal Generic Memristors via State-Space Transformation
Biolek, D., Biolková, V., Biolek, Z., & Kolka, Z. (2015) · Radioengineering · doi:10.13164/re.2015.0393 · Cited by 40
“The analysis of such cases given in [41] reveals the cause of the malfunction of the numerical model: at a certain time instant, due to numerical errors which are generated via a co-action of the rounding errors and the method of modeling the integrator according to Fig.”
MethodGas Discharge Lamps Are Volatile Memristors
Lin, D., Hui, S. R. R., & Chua, L. (2014) · IEEE Transactions on Circuits and Systems Part 1: Regular Papers · doi:10.1109/tcsi.2014.2304659 · Cited by 39
“The generalized discharge lamp model equations are now used to check their three fingerprints of memristor as specified in [17].”
BackgroundMethodSelf-citationBioinspired ion-shuttling memristor with both neuromorphic functions and ion selectivity
Xie, B., Xiong, T., Guo, G., Pan, C., Ma, W., & Yu, P. (2025) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.2417040122 · Cited by 37
“As the scan rate increases from 5 to 250 mV/s, the area of the hysteresis loop decreases, satisfying the fingerprint of memristors ( 32 ).”
Infinitely many hidden attractors in a new fractional-order chaotic system based on a fracmemristor
Muñoz-Pacheco, J. (2019) · The European Physical Journal Special Topics · doi:10.1140/epjst/e2019-900035-y · Cited by 38
Desai, T. R., Dongale, T. D., Patil, S. R., Tiwari, A. P., Pawar, P. K., Kamat, R. K., & Kim, T. G. (2021) · Journal of Materials Research and Technology · doi:10.1016/j.jmrt.2021.01.108 · Cited by 53
Conducting mechanisms of forming-free TiW/Cu2O/Cu memristive devices
Yan, P.-C., Li, Y., Hui, Y., Zhong, S. J., Zhou, Y., Xu, L., Liu, N., Qian, H., Sun, H., & Miao, X. (2015) · Applied Physics Letters · doi:10.1063/1.4928979 · Cited by 35
An analytical model of memristors in plants
Markin, V. S., Volkov, A. G., & Chua, L. O. (2014) · Plant Signaling & Behavior · doi:10.4161/15592316.2014.972887 · Cited by 43
Self-citationOscillator Made of Only One Memristor and One Battery
Sah, M. P., Mannan, Z. I., Kim, H., & Chua, L. (2015) · International Journal of Bifurcation and Chaos · doi:10.1142/s0218127415300104 · Cited by 37
Self-citationA Novel Universal Interface for Constructing Memory Elements for Circuit Applications
Zheng, C., Yu, D., Iu, H. H., Fernando, T. L., Sun, T., Eshraghian, J. K., & Guo, H. (2019) · IEEE Transactions on Circuits and Systems I Regular Papers · doi:10.1109/tcsi.2019.2938094 · Cited by 45
“In this section, all experimental results are in good agreement with simulation results in section V, demonstrating that mem-elements built based on the universal interface can be realized in experiments and perform well with the ability to mimic fundamental fingerprints of mem-elements and exhibit their dynamics acco…”
ResultDynamical effects of memristive load on peak current mode buck-boost switching converter
Bao, B., Zhang, X., Bao, H., Wu, P., Wu, Z., & Chen, M. (2019) · Chaos, Solitons & Fractals · doi:10.1016/j.chaos.2019.03.003 · Cited by 36
Research progress and applications of memristor emulator circuits
Lin, R., Shi, G., Qiao, F., Wang, C., & Wu, S. (2023) · Microelectronics Journal · doi:10.1016/j.mejo.2023.105702 · Cited by 35
Coexisting Attractors and Multistability in a Simple Memristive Wien-Bridge Chaotic Circuit
Song, Y., Yuan, F., & Li, Y.-X. (2019) · Entropy · doi:10.3390/e21070678 · Cited by 35
“Therefore, the proposed memristor satisfies the characteristic fingerprints of memristors [2].”
BackgroundCircuit Implementation of Nano-Scale TiO2 Memristor Using Only Metal-Oxide-Semiconductor Transistors
Gul, F. (2019) · IEEE Electron Device Letters · doi:10.1109/led.2019.2899889 · Cited by 35
“Memristors can be characterized by their pinched hysteresis loops which serve as diagnostic markers [30].”
BackgroundAntimonotonicity, Crisis and Multiple Attractors in a Simple Memristive Circuit
Volos, C., Akgul, A., Pham, V., & Baptista, M. (2018) · J. Circuits Syst. Comput. · doi:10.1142/s0218126618500263 · Cited by 35
“[28] the proposed generalized memristor exhibits the three characteristic fingerprints for identifying a memristor.[36] Due to its simplicity, its ease of realization and the absence of ground restrictions the specific circuitry realization of a memristor is an”
BackgroundMemristor initial-boosted extreme multistability in the novel dual-memristor hyperchaotic maps
Zhang, S.-H., Zhang, H.-L., & Wang, C. (2023) · Chaos, Solitons & Fractals · doi:10.1016/j.chaos.2023.113885 · Cited by 34
Capacitive coupled non-zero I–V and type-II memristive properties of the NiFe2O4–TiO2 nanocomposite
Ahir, N. A., Takaloo, A., Nirmal, K., Kundale, S., Chougale, M. Y., Bae, J., Kim, D., & Dongale, T. (2021) · Materials Science in Semiconductor Processing · doi:10.1016/j.mssp.2020.105646 · Cited by 34
The Birth of a New Field: Memristive Sensors. A Review
Carrara, S. (2020) · IEEE Sensors Journal · doi:10.1109/jsen.2020.3043305 · Cited by 34
“And, in fact, current-to-voltage curves showing the three main features attributed to the memristive conductivity (fully pinched hysteresis loops, hysteresis lobes decreasing with the voltage-scan frequency, and hysteresis collapsing at high frequencies [25]) have been observed in nanoscale structures as fabricated wi…”
BackgroundWang, L., Wang, Z., Lin, J., Yang, J., Xie, L., Yi, M., Li, W., Ling, H., Ou, C., & Huang, W. (2016) · Scientific Reports · doi:10.1038/srep35273 · Cited by 34
A nanofluidic memristor based on ion concentration polarization.
Bu, Y., Ahmed, Z., & Yobas, L. (2019) · In Analysis · doi:10.1039/c9an01561b · Cited by 33
Yuan, Y., Yu, F., Tan, B., Huang, Y., Yao, W., Cai, S., & Lin, H. (2025) · Chaos An Interdisciplinary Journal of Nonlinear Science · doi:10.1063/5.0238893 · Cited by 42
Wlaźlak, E., Marzec, M. M., Zawal, P., & Szacilowski, K. T. (2019) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.9b01841 · Cited by 32
A MOS-DTMOS Implementation of Floating Memristor Emulator for High-Frequency Applications
R., A. Y., Raj, N., & Trivedi, G. (2023) · IEEE Transactions on Very Large Scale Integration (vlsi) Systems · doi:10.1109/tvlsi.2022.3227201 · Cited by 31
“The key principle mechanism of memristor emulation is to exhibit three important fingerprints [38], viz.”
BackgroundGoren, N., Das, T. K., Brown, N., Gilead, S., Yochelis, S., Gazit, E., Naaman, R., & Paltiel, Y. (2021) · Nano Letters · doi:10.1021/acs.nanolett.1c01865 · Cited by 43
“41 This frequency dependence is presented in Figure 3b.”
Analysis of a 4-D Hyperchaotic Fractional-Order Memristive System with Hidden Attractors
Volos, C., Pham, V., Zambrano-Serrano, E., Muñoz-Pacheco, J., Vaidyanathan, S., & Tlelo-Cuautle, E. (2017) · Studies in computational intelligence · doi:10.1007/978-3-319-51724-7_9 · Cited by 31
Comparative analysis of memristor models and memories design
Singh, J., & Raj, B. (2018) · Journal of Semiconductors · doi:10.1088/1674-4926/39/7/074006 · Cited by 30
Generalised mathematical model of memristor
Sun, J., Yao, L.-N., Zhang, X., Wang, Y.-F., & Cui, G.-Z. (2016) · IET Circuits Devices Syst. · doi:10.1049/iet-cds.2014.0381 · Cited by 30
A novel OTA-based circuit model corroborated by an experimental semiconductor memristor
Gul, F., & Babacan, Y. (2018) · Microelectronic Engineering · doi:10.1016/j.mee.2018.03.012 · Cited by 29
Tuning the analog and digital resistive switching properties of TiO2 by nanocompositing Al-doped ZnO
Patil, A. P., Nirmal, K. A., Mali, S. S., Hong, C. K., Kim, T. G., Patil, P. S., & Dongale, T. D. (2020) · Materials Science in Semiconductor Processing · doi:10.1016/j.mssp.2020.105110 · Cited by 34
Pu, Y.-F. (2016) · IEEE Access · doi:10.1109/access.2016.2585818 · Cited by 29
“The periodic table of all twoterminal circuit elements is presented in Figure 1 [51]–[58].”
BackgroundMethodResistive switching of reactive sputtered TiO2 based memristor in crossbar geometry
Efeoǧlu, H., Güllülü, S., & Karacali, T. (2015) · Applied Surface Science · doi:10.1016/j.apsusc.2015.03.088 · Cited by 29
Robust Simulation of a TaO Memristor Model
Ascoli, A., Tetzlaff, R., & Chua, L. O. (2015) · Radioengineering · doi:10.13164/re.2015.0384 · Cited by 36
“Williams [4], uncovered the emergence of fingerprints [5] of memristive behavior [6] in nature, while studying the switching property of a double-layer nano-scale film based on Titanium dioxide and sandwiched between two metallic contacts [7].”
BackgroundSelf-citationYao, W., Gao, K., Wang, Y., Lin, H., Wu, H., Xu, C., & Zhang, X. (2025) · Neural Networks · doi:10.1016/j.neunet.2025.107502 · Cited by 29
A Dream that has Come True: Chaos from a Nonlinear Circuit with a Real Memristor
Volos, C., Pham, V., Nistazakis, H., & Stouboulos, I. (2020) · International Journal of Bifurcation and Chaos in Applied Sciences and Engineering · doi:10.1142/s0218127420300360 · Cited by 28
Halogen-containing semiconductors: From artificial photosynthesis to unconventional computing
Klejna, S., Mazur, T., Wlaźlak, E., Zawal, P., Soo, H. S., & Szacilowski, K. T. (2020) · Coordination Chemistry Reviews · doi:10.1016/j.ccr.2020.213316 · Cited by 33
Realization of the meminductor.
Han, J., Song, C., Gao, S., Wang, Y.-Y., Chen, C., & Pan, F. (2014) · ACS Nano · doi:10.1021/nn502655u · Cited by 28
Spatiotemporal Chaos in a Sine Map Lattice With Discrete Memristor Coupling
He, S.-B., Yan, B., Wu, X.-M., Wang, H.-H., Wang, M.-J., & Iu, H. H. (2024) · IEEE Transactions on Circuits and Systems Part 1: Regular Papers · doi:10.1109/tcsi.2023.3347411 · Cited by 27
“C URRENTLY, as a new class of generalized memristor, the discrete memristor has been proposed mathematically and materially [1], [2], because it satisfies the three finger prints mentioned by Chua [3].”
BackgroundZhang, S.-H., Wang, C., Zhang, H.-L., & Lin, H.-R. (2023) · Chaos · doi:10.1063/5.0160751 · Cited by 27
Zhang, S., Zhang, H., & Wang, C. (2023) · Nonlinear Dynamics · doi:10.1007/s11071-023-08652-y · Cited by 34
“For the above purpose, the tremendous ideal discrete memristors are proposed [20, 21], which show complex nonlinear characteristics and are also consistent with the three essential feature fingerprints of the memristor [22].”
BackgroundMemristive FHN spiking neuron model and brain-inspired threshold logic computing
Fang, X., Duan, S.-K., & Wang, L.-D. (2022) · Neurocomputing · doi:10.1016/j.neucom.2022.08.056 · Cited by 27
A tristable locally-active memristor and its complex dynamics
Ying, J.-J., Liang, Y., Wang, J., Dong, Y.-J., Wang, G., & Gu, M.-Y. (2021) · Chaos, Solitons & Fractals · doi:10.1016/j.chaos.2021.111038 · Cited by 27
Coexisting multiscroll hyperchaotic attractors generated from a novel memristive jerk system
Xia, X., Zeng, Y.-C., & Li, Z. (2018) · Pramana (Bangalore) · doi:10.1007/s12043-018-1657-3 · Cited by 27
Memristors: Memory elements in potato tubers
Volkov, A., Nyasani, E. K., Blockmon, A. L., & Volkova, M. I. (2015) · Plant Signalling & Behavior · doi:10.1080/15592324.2015.1071750 · Cited by 27
Resistorless Floating/Grounded Memristor Emulator Model With Electronic Tunability
Sagar, Ranjan, R., & Kang, S. (2023) · IEEE Transactions on Circuits and Systems - II - Express Briefs · doi:10.1109/tcsii.2023.3242301 · Cited by 26
“The Lissajous figures in I-V plane are hysteretic (pinched) that varies with the excitation frequency of the input signal [4].”
BackgroundA novel memristor-based dynamical system with multi-wing attractors and symmetric periodic bursting.
Chang, H., Li, Y.-X., & Chen, G. (2020) · Chaos · doi:10.1063/1.5129557 · Cited by 26
The First Radios Were Made Using Memristors!
Gandhi, G., Aggarwal, V., & Chua, L. O. (2013) · IEEE Circuits and Systems Magazine · doi:10.1109/mcas.2013.2256255 · Cited by 26
Self-citationThe Memory-Conservation Theory of Memristance
Gale, E. (2011) · 2014 UKSim-AMSS 16th International Conference on Computer Modelling and Simulation · doi:10.1109/uksim.2014.57 · Cited by 26
“A memristor is identified by its pinched hysteresis loop in V -I space [1] and frequency dependence [2].”
BackgroundMemristive LIF Spiking Neuron Model and Its Application in Morse Code
Fang, X., Liu, D.-R., Duan, S.-K., & Wang, L.-D. (2022) · Frontiers in Neuroscience · doi:10.3389/fnins.2022.853010 · Cited by 25
“The memristor performs the feature of pure resistance (Adhikari et al., 2013).”
BackgroundFour quadrant analog multiplier based memristor emulator using single active element
Sharma, V., Parveen, T., & Ansari, M. S. (2021) · AEU - International Journal of Electronics and Communications · doi:10.1016/j.aeue.2020.153575 · Cited by 25
Molina-Reyes, J., & Hernández-Martínez, L. (2017) · Complex · doi:10.1155/2017/8263904 · Cited by 25
Electronically Tunable Flux-Controlled Resistorless Memristor Emulator
Sagar, Raj, N., Verma, V., & Ranjan, R. (2022) · IEEE Canadian Journal of Electrical and Computer Engineering · doi:10.1109/icjece.2022.3182711 · Cited by 25
“3182711 Memristor has been characterized using three basic fingerprint features [3].”
MethodFiring activities in a second-order memristor-based Hindmarsh-Rose neuron
Li, Y., & Jiang, F. (2024) · Chinese Journal of Physics · doi:10.1016/j.cjph.2024.04.002 · Cited by 27
Neuromorphic behaviors in a neuron circuit based on current-controlled Chua Corsage Memristor
Li, Z., & Chen, K. (2023) · Chaos Solitons & Fractals · doi:10.1016/j.chaos.2023.114017 · Cited by 27
Resistive Tunable Memristor Emulator Model and its Application
Sharma, P. K., Prasad, S. S. S., Tasneem, S., Priyadarshini, B., & Ranjan, R. K. (2022) · AEU - International Journal of Electronics and Communications · doi:10.1016/j.aeue.2022.154500 · Cited by 24
Third-Order Memristive Morris–Lecar Model of Barnacle Muscle Fiber
Rajamani, V., Sah, M. P., Mannan, Z. I., Kim, H., & Chua, L. O. (2017) · International Journal of Bifurcation and Chaos · doi:10.1142/s0218127417300154 · Cited by 28
“4 that the lobe area of each of the individual pinched hysteresis loop shrinks as the frequency increases [Adhikari et al., 2013; Chua, 2014; Sah et al., 2015; Mannan et al., 2016; Rajamani et al., 2016].”
BackgroundSelf-citationNew DTMOS Based High Frequency Memristor Emulator and Its Nonlinear Applications
Srivastava, P., Sharma, R. K., Gupta, R. K., Kaçar, F., & Ranjan, R. (2024) · IEEE Access · doi:10.1109/access.2023.3344311 · Cited by 24
Aqueous chemimemristor based on proton-permeable graphene membranes
Wang, Y., Seki, T., Gkoupidenis, P., Chen, Y., Nagata, Y., & Bonn, M. (2024) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.2314347121 · Cited by 27
“Markedly, the G − V g curve displays hysteretic changes and a self - crossing point at around −0.8 V, which indicates that the CaF 2 - supported graphene/water system displays memristive behavior (58, 59).”
BackgroundInfluentialWang, Q., Hu, C.-Y., Tian, Z., Wu, X.-M., Sang, H.-W., & Cui, Z. (2023) · Results in Physics · doi:10.1016/j.rinp.2023.107201 · Cited by 23
Transient and steady coexisting attractors in a new memristor-based 4-D chaotic circuit
Cao, H., & Wang, F. (2019) · AEU - International Journal of Electronics and Communications · doi:10.1016/j.aeue.2019.07.002 · Cited by 25
A compact memristor emulator for novel IC applications: Its design and experimental validation
Sagar, Verma, J. S., Joshi, M., Ranjan, R., & Kang, S.-M. (2024) · Chaos, Solitons & Fractals · doi:10.1016/j.chaos.2024.114824 · Cited by 22
Multiple Pinch-Off Points in Memristive Equations: Analysis and Experiments
Hamed, E. M., Fouda, M., & Radwan, A. G. (2019) · IEEE Transactions on Circuits and Systems Part 1: Regular Papers · doi:10.1109/tcsi.2019.2912821 · Cited by 22
“There are three main characteristics to the memristor [41]:”
BackgroundFu, Q.-H., Cai, J.-Y., Zhong, S.-M., & Yu, Y.-B. (2018) · Neurocomputing · doi:10.1016/j.neucom.2017.09.014 · Cited by 22
Vourkas, I., & Sirakoulis, G. (2014) · Microelectronics Journal · doi:10.1016/j.mejo.2014.08.004 · Cited by 22
“It satisfies the desired memristive fingerprints [35] and, compared with other SPICE implementations it involves significantly low-complexity operation under an unlimited set of frequencies.”
BackgroundEmergent spiking in non-ideal memristor networks
Gale, E., Costello, B. D. L. D. L., & Adamatzky, A. (2012) · Microelectronics Journal · doi:10.1016/j.mejo.2014.06.008 · Cited by 22
Zhang, S., Zhang, H., Wang, C., & Lin, H. (2024) · Chaos Solitons & Fractals · doi:10.1016/j.chaos.2024.114459 · Cited by 21
A Multistable Discrete Memristor and Its Application to Discrete-Time FitzHugh–Nagumo Model
Shatnawi, M., Khennaoui, A.-A., Ouannas, A., Grassi, G., Radogna, A., Bataihah, A., & Batiha, I. (2023) · Electronics · doi:10.3390/electronics12132929 · Cited by 21
High Frequency Response of Non-Volatile Memristors
Messaris, I., Ascoli, A., Demirkol, A. S., & Tetzlaff, R. (2023) · IEEE Transactions on Circuits and Systems Part 1: Regular Papers · doi:10.1109/tcsi.2022.3219368 · Cited by 21
“value x̄s, under an AC periodic input of sufficiently-high frequency [8].”
BackgroundExact Analysis and Physical Realization of the 6‐Lobe Chua Corsage Memristor
Mannan, Z. I., Yang, C., Adhikari, S. P., & Kim, H. (2018) · Complexity · doi:10.1155/2018/8405978 · Cited by 22
“The frequency-dependent pinched hysteresis loops of a device, when driven by any periodic input current or voltage source with a zero DC component, are a signature of a memristor or memristive system [13].”
BackgroundSelf-citationThreshold flux-controlled memristor model and its equivalent circuit implementation
Wu, H., Bao, B., & Chen, M. (2014) · Chinese Physics B · doi:10.1088/1674-1056/23/11/118401 · Cited by 27
How Can the Hysteresis Loop of the Ideal Memristor Be Pinched?
Biolek, Z., & Biolek, D. (2014) · IEEE Transactions on Circuits and Systems - II - Express Briefs · doi:10.1109/tcsii.2014.2327303 · Cited by 21
“According to the type of pinching, the PHLs are of type I (self-crossing) and type II (not self-crossing) [4], denoted in [6] as transversal and nontransversal.”
BackgroundXu, Q., Wang, K., Feng, C.-T., Fan, W.-W., & Wang, N. (2024) · Chaos, Solitons & Fractals · doi:10.1016/j.chaos.2024.115646 · Cited by 20
Alqurashi, M., Asif, Q., Chu, Y.-M., Rashid, S., & Elagan, S. K. (2023) · Results in Physics · doi:10.1016/j.rinp.2023.106627 · Cited by 20
Njimah, O. M., Janarthanan, R., Telem, A. N. K., Kengne, J., & Rajagopal, K. (2022) · Chaos Solitons & Fractals · doi:10.1016/j.chaos.2022.112983 · Cited by 24
Two Modified Chaotic Maps Based on Discrete Memristor Model
Li, G.-D., Zhong, H.-Y., Xu, W.-X., & Xu, X.-L. (2022) · Symmetry · doi:10.3390/sym14040800 · Cited by 20
“Hence, the two discrete memristor models have the three fingerprints of the memristor in [30], which can be can be further studied.”
BackgroundBipolar resistive switching and memristive properties of sprayed deposited Bi2WO6 thin films
Patil, A. R., Dongale, T. D., Nirmale, S. S., Kamat, R. K., & Rajpure, K. Y. (2021) · Materials Today Communications · doi:10.1016/j.mtcomm.2021.102621 · Cited by 21
Exploring the Dynamics of Real-World Memristors on the Basis of Circuit Theoretic Model Predictions
Ascoli, A., Tetzlaff, R., & Menzal, S. (2018) · IEEE Circuits and Systems Magazine · doi:10.1109/mcas.2018.2821760 · Cited by 20
Memristors in the Venus flytrap
Volkov, A., Forde-Tuckett, V., Reedus, J., Mitchell, C. M., Volkova, M. I., Markin, V. S., & Chua, L. (2014) · Plant Signalling & Behavior · doi:10.4161/psb.29204 · Cited by 20
Self-citationZheng, H., Li, G., Xu, W., Zhong, H., & Xu, X. (2023) · Optik · doi:10.1016/j.ijleo.2023.170991 · Cited by 20
Fracmemristor Oscillator: Fractional-Order Memristive Chaotic Circuit
Pu, Y.-F., Yu, B., He, Q.-Y., & Yuan, X. (2022) · IEEE Transactions on Circuits and Systems Part 1: Regular Papers · doi:10.1109/tcsi.2022.3200211 · Cited by 19
“with one pinched point at the origin [14].”
BackgroundMaestro-Izquierdo, M., González, M. B., Campabadal, F., Suñé, J., & Miranda, E. (2021) · IEEE Electron Device Letters · doi:10.1109/led.2021.3063239 · Cited by 19
“ACCORDING to [1] and [2], a memristive device exhibits three major fingerprints: i) a pinched hysteresis loop in the current-voltage (I-V ) plane, ii) the decrease of the”
BackgroundChaos suppression for a Buck converter with the memristive load
Zhu, B., Fan, Q., Li, G., & Wang, D. (2021) · Analog Integrated Circuits and Signal Processing · doi:10.1007/s10470-021-01799-x · Cited by 21
Memristors: a Short Review on Fundamentals, Structures, Materials and Applications
Domaradzki, J., Wojcieszak, D., Kotwica, T., & Mańkowska, E. (2020) · International Journal of Electronics and Telecommunications · doi:10.24425/ijet.2020.131888 · Cited by 19
“Moreover, in order to be called a memristor, the device must fulfil three characteristic conditions [6,12]: device must show pinched hysteresis loop in the I-V plane for every bipolar excitation signal, hysteresis lobe area should decrease monotonically with an increasing in excitation frequency, hysteresis loop shoul…”
BackgroundMaruf, M. H., & Ali, S. I. (2019) · International Journal of Electronics · doi:10.1080/00207217.2019.1661021 · Cited by 22
Analysis and generation of chaos using compositely connected coupled memristors
Zheng, C., Iu, H. H., Fernando, T. L., Yu, D., Guo, H., & Eshraghian, J. K. (2018) · Chaos An Interdisciplinary Journal of Nonlinear Science · doi:10.1063/1.5023142 · Cited by 17
An Improved Memristive Diode Bridge‐Based Band Pass Filter Chaotic Circuit
Xu, Q., Zhang, Q., Wang, N., Wu, H., & Bao, B. (2017) · Mathematical Problems in Engineering · doi:10.1155/2017/2461964 · Cited by 19
“Thus, various kinds of physically implementable equivalent circuits which can manifest the three fingerprints of memristors [17] have attracted much attention [2, 6–18].”
BackgroundCyclic voltammetry of apple fruits: Memristors in vivo.
Volkov, A., Nyasani, E. K., Tuckett, C., Blockmon, A. L., Reedus, J., & Volkova, M. I. (2016) · Bioelectrochemistry · doi:10.1016/j.bioelechem.2016.07.001 · Cited by 19
Optimal Synchronization of a Memristive Chaotic Circuit
Kountchou, M., Louodop, P., Bowong, S., Fotsin, H., & Kurths, J. (2016) · International Journal of Bifurcation and Chaos in Applied Sciences and Engineering · doi:10.1142/s0218127416500930 · Cited by 19
“Thus, according to [Adhikari et al., 2013] the three main fingerprints of memristive system have been observed in the proposed memristive device (2).”
BackgroundMethodMemristive Model of the Barnacle Giant Muscle Fibers
Sah, M. P., Kim, H., Eroglu, A., & Chua, L. O. (2016) · International Journal of Bifurcation and Chaos · doi:10.1142/s0218127416300019 · Cited by 23
“However, the memrisitve fingerprints [Adhikari et al., 2013; Chua, 2015]2 of the calcium and potassium ions were not given an in-depth and comprehensive analysis.”
BackgroundSelf-citationMemristor emulator based on single CCII
Alharbi, A. G., Khalifa, Z. J., Fouda, M., & Chowdhury, M. (2015) · International Congress of Mathematicans · doi:10.1109/icm.2015.7438016 · Cited by 19
“Furthermore, some substantial fingerprints, also known as the signature of a memristor are required for any device to call it memristor [3].”
BackgroundMemristor and Inverse Memristor: Modeling, Implementation and Experiments
Fouda, M., Radwan, A. G., & Elwakil, A. (2017) · Studies in computational intelligence · doi:10.1007/978-3-319-51724-7_15 · Cited by 19
Dynamics and synchronization of fractional-order Rulkov neuron coupled with discrete fracmemristor
Tang, Z., Wang, H.-H., Zhu, W., & Sun, K. (2025) · Chaos, Solitons & Fractals · doi:10.1016/j.chaos.2025.116012 · Cited by 18
Kumar, P., Makhdoomi, B. S., Verma, J. S., Sonwani, S., Ranjan, R., & Ranjan, R. (2024) · AEU - International Journal of Electronics and Communications · doi:10.1016/j.aeue.2024.155624 · Cited by 18
Khan, N. A., Qureshi, M. A., Akbar, S., & Ara, A. (2022) · Physica Scripta · doi:10.1088/1402-4896/aca1e8 · Cited by 27
Kuate, P. D. K., Lai, Q., & Fotsin, H. B. (2019) · The European Physical Journal Special Topics · doi:10.1140/epjst/e2019-900032-5 · Cited by 27
Metadata
- Authors
- Adhikari, S. P., Sah, M. P., Kim, H., & Chua, L. O.
- Affiliations
- Jeonbuk National University (KR)
- University of California, Berkeley (US)
- Venue
- IEEE Transactions on Circuits and Systems I: Regular Papers
- Published
- 2013-11
- Volume
- 60
- Issue
- 11
- Pages
- 3008-3021
- ISSN
- 1549-8328 (ISSN-L)
- 1558-0806
- OpenAlex
- W2084914578
- Cited by
- 659
- References
- 0
- Citations by year
- 2026: 34 · 2025: 56 · 2024: 59 · 2023: 70 · 2022: 76 · 2021: 55 · 2020: 60 · 2019: 49 · 2018: 55 · 2017: 36 · 2016: 28 · 2015: 46 · 2014: 28 · 2013: 6
- FWCI
- 21.60
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Transactions on Circuits and Systems I Regular Papers (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Physics and Astronomy › Statistical and Nonlinear Physics › Chaos control and synchronization
- Keywords
- memristors, pinched hysteresis loop, hysteresis loop area, frequency dependence, current-voltage characteristics
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