The DOI matches its Crossref record; 8 of the 8 references it cites were found in a registry or an index.
Three Fingerprints of Memristor
Abstract
This paper illustrates that for a device to be a memristor it should exhibit three characteristic fingerprints: 1) When driven by a bipolar periodic signal the device must exhibit a “pinched hysteresis loop” in the voltage-current plane, assuming the response is periodic. 2) Starting from some critical frequency, the hysteresis lobe area should decrease monotonically as the excitation frequency increases, and 3) the pinched hysteresis loop should shrink to a single-valued function when the frequency tends to infinity. Examples of memristors exhibiting these three fingerprints, along with non-memristors exhibiting only a subset of these fingerprints are also presented. In addition, two different types of pinched hysteresis loops; the transversal (self-crossing) and the non-transversal (tangential) loops exhibited by memristors are also discussed with its identification criterion.
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“Numerous examples of pinched hysteresis loops of memristors can be found in [3], [13], [22].”
From Everything You Wish to Know About Memristors But Are Afraid to Ask (2015) · cites this paper as [13]
Citations
Cites
Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,828
Memristor—The Missing Circuit Element
Chua, L. (1971) · IEEE Transactions on Circuit Theory · doi:10.1109/tct.1971.1083337 · Cited by 10,268
Self-citationMemristive devices and systems
Chua, L. O., & Kang, S. M. (1976) · Proceedings of the IEEE · doi:10.1109/proc.1976.10092 · Cited by 2,604
Self-citationResistance switching memories are memristors
Chua, L. (2011) · Applied Physics A · doi:10.1007/s00339-011-6264-9 · Cited by 1,434
Self-citationMemory effects in complex materials and nanoscale systems
Pershin, Y. V., & Di Ventra, M. (2011) · Advances In Physics · doi:10.1080/00018732.2010.544961 · Cited by 823 · cited 1×
“For the examples presented in [13] it was noted that non-transversal loops occurred when and are even functions of , where , but this was not a necessary condition as transversal pinched hysteresis loops were observed in unipolar resistance switching devices where and were even functions of .”
BackgroundHODGKIN–HUXLEY AXON IS MADE OF MEMRISTORS
CHUA, L., SBITNEV, V., & KIM, H. (2012) · International Journal of Bifurcation and Chaos · doi:10.1142/s021812741230011x · Cited by 319
Self-citationNonlinear circuit foundations for nanodevices, part I: the four-element torus
Chua, L. O. (2003) · Proceedings of the IEEE · doi:10.1109/jproc.2003.818319 · Cited by 263
Self-citationPinched hysteretic loops of ideal memristors, memcapacitors and meminductors must be ‘self-crossing’
Biolek, D., Biolek, Z., & Biolkova, V. (2011) · Electronics Letters · doi:10.1049/el.2011.2913 · Cited by 145
Flagged first, then by citations
Research works printed but not linked: 12
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- chua, 1969, Introduction to Nonlinear Network Theory
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- kim, 2012, Pinched hysteresis loops is the fingerprint of memristive devices, arXiv 1202 2437v2
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Cited by
Sorted by citations
Items 501–541 of 541
A Matrix Coding Genetic Algorithm Based on Memristor for Image Edge Detection
Zhong, X., Yu, Y.-B., Zhou, C., Wang, X.-X., Feng, X., Zhou, Z., Shen, J.-R., Wang, J.-Y., & Han, X.-Y. (2023) · International Conference on Critical Infrastructure Protection · doi:10.1145/3638884.3638895
“The state of memristor depends on one or more internal state variables and can be modulated depending on the history of external stimulation [1, 6, 22], the characteristic of both memory and computation, make it well-behaved in signal processing [12].”
BackgroundExistence of Capacitive Effects in a Tungsten-based SDC Memristive System
Dalmış, C., Mutlu, R., & Karakulak, E. (2023) · Informacije midem · doi:10.33180/infmidem2023.301
“With the M-C-R s series circuit, the charging and discharging of the capacitor through the protection resistor and the memristor was investigated using an oscillator as a square wave voltage source and an oscilloscope.”
InfluentialA Novel Memristive Chaotic System with Hidden Attractors and a Line of Equilibria
Wang, Z., Sriram, S., Tian, H.-G., & Rajagopal, K. (2023) · Scientia Iranica. International Journal of Science and Technology · doi:10.24200/sci.2023.61440.7307
Turfanda, A., & Ünlü, H. (2023) · Journal of Applied Physics · doi:10.1063/5.0139576 · Cited by 2
An Adaptive Window Function based Memristor Model
Ananda, Y. R., Hajra, A., & Trivedi, G. (2023) · International Conference Radioelektronika · doi:10.1109/radioelektronika57919.2023.10109029
“3 and the lobe area of PHL starts shrinking when the frequency increases from 100 Hz to 10 kHz, which verifies the correctness of memristor behaviour [15] using a proposed window function.”
MethodRandom Number Generation With a Hybrid Conjugated Polymer Memristor
Foulger, S., Bandera, Y. P., Grant, B., & Pfleger, J. (2023) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2022.3228973
“curves as the dc voltage is tuned over a defined voltage interval [45].”
BackgroundImpact of steady state and impulse excitations on CuSO4 based memristor
Poornima, S. (2023) · Engineering Science and Technology, an International Journal · doi:10.1016/j.jestch.2022.101297
Dhama, D., & Saini, S. (2022) · Signal and Image Processing · doi:10.1109/iconsip49665.2022.10007492
“There is a need for the memristor emulators circuit that satisfies the following characteristics:(i)The “pinchedhysteresis loop” characteristic is considered to be the “signature” of the memristor which is pinched at the origin, (ii)As the frequency increases, the lobe area of the hysteresis curve goes on decreasing,…”
BackgroundParlar, İ., & Almalı, M. N. (2022) · Journal of electronic testing · doi:10.1007/s10836-022-05991-3
“Each stage of this proposed op-amp model is discussed in detail in the subsections [1, 3, 5, 8].”
MethodWang, Y., Zhong, Z., Jin, X., Peng, Y., & Luo, J. (2021) · Scientific Reports · doi:10.1038/s41598-021-00594-y
A Flux Controlled Memristor using 90nm Technology
Battula, D. T. K., & Salma, S. (2021) · Indian Journal of Signal Processing · doi:10.35940/ijsp.b1004.051221
Efeoǧlu, H. (2021) · Materials Today Proceedings · doi:10.1016/j.matpr.2021.03.286
Understanding the Input Signal Frequency Effects on the Resistive Window of MemristorsPreprint
Maestro-Izquierdo, M., González, M. B., Campabadal, F., Miranda, E., & Suñé, J. (2020) · doi:10.36227/techrxiv.13476744
“CCORDING to [1] and [2], a memristive device exhibits three major fingerprints: i) a pinched hysteresis loop in the current-voltage (I-V) plane, ii) the decrease of the hysteresis lobe area as the input signal frequency increases, and iii) the shrinking of the pinched hysteresis loop to a single-valued function when t…”
BackgroundGeneric and Practical Emulators for the Voltage-Controlled Memristor Models
Alharbi, A. G., & Chowdhury, M. (2020) · Memristor Emulator Circuits · doi:10.1007/978-3-030-51882-0_5
Memristive Model of Excitable CellsPreprint
Sah, M. P., & Budhathoki, R. K. (2020) · arXiv (Cornell University) · doi:10.48550/arxiv.2005.05789
Self-citationMemristor devices and memristor-based circuits
Yanambaka, V. P., Mohanty, S., Kougianos, E., & Ghai, D. (2020) · Institution of Engineering and Technology eBooks · doi:10.1049/pbcs049e_ch5
Study of Forming Process in Memristive Devices using Rectangular
Zegarmistrz, P. (2020) · doi:10.15199/48.2020.01.04
Wang, Y., Cao, S., Jin, X., Peng, Y., & Luo, J. (2020) · Semiconductor Science and Technology · doi:10.1088/1361-6641/abc2e8
Analysis of nonlinear passive pinched hysteresis generator circuits
Kiyama-Armendariz, R., & Abraham, I. (2019) · Midwest Symposium on Circuits and Systems · doi:10.1109/mwscas.2019.8885055
“The lobe size decreases as frequency increases; this is the second fingerprint of a memristor [13].”
BackgroundAnalytic analysis for effects of input initial phase on input-output dynamics of memristor
Hu, W., Wei, R.-S., & Lin, J.-B. (2019) · IEICE Electronics Express · doi:10.1587/elex.16.20190154
“According to the classical fingerprints of memristor [29], the PHL area, defined as the area enclosed by the Fig.”
MethodAn HAM-Based Analytic Modeling Methodology for Memristor Enabling Fast ConvergencePreprint
Hu, W., Du, Y., Luo, H., Chen, C., & Wei, R. (2018) · arXiv (Cornell University) · doi:10.48550/arxiv.1812.00317 · Cited by 2
“The above results indicate that the HAM-based model conforms to the classical fingerprints of the memristor [40].”
ResultMemristor Model Based on Generalized Boundary Condition
Sethi, S. (2017) · International Journal of Engineering Trends and Technology · doi:10.14445/22315381/ijett-v49p231
Similarity between the response of memristive and memcapacitive circuits subjected to ramped voltage
Kanygin, M., Katkov, M. V., & Pershin, Y. (2017) · Journal of Nanophotonics · doi:10.1117/1.jnp.11.032507
“The distinguishing general feature of memory circuit elements is the frequency-dependent pinched hysteresis loop in their input–output variables.(2,4,5) While the memristive systems(4,6) (memristors)(7) are the most studied type of memory circuit elements, a significant interest is also paid to memcapacitive systems(2…”
BackgroundCommon properties of dynamical models of electric arcs and memristors
Trzaska, Z. (2016) · Elektronika : konstrukcje, technologie, zastosowania · doi:10.15199/13.2016.12.9
Memrystor : brakujący element elektroniczny
Domaradzki, J., Kaczmarek, D., Wojcieszak, D., Mazur, M., Poniedziałek, A., & Kotwica, T. (2016) · Elektronika : konstrukcje, technologie, zastosowania · doi:10.15199/13.2016.7.3
Class of memristors from cascade of static nonlinear two ports with dynamic one-ports
Ascoli, A., Tetzlaff, R., & Corinto, F. (2015) · IEEE International Joint Conference on Neural Network · doi:10.1109/ijcnn.2015.7280305
Study on the memristive nature of dielectric barrier discharge
Luo, L., Dai, D., Han, Y.-X., Li, L.-C., & Shao, T. (2015) · International Conference on Plasma Science · doi:10.1109/plasma.2015.7179601
Generic meminductive characteristics of switched reluctance machines
Liang, Y., Chen, H., Liu, H.-J., & Shi, J.-T. (2015) · Chinese Physics B · doi:10.1088/1674-1056/24/6/068401
Dynamics of a Photochromic-Actuated Slot Microring Photonic Memristor
Bilodeau, S., Doris, E., & Prucnal, P. (2022) · IEEE Journal of Selected Topics in Quantum Electronics · doi:10.1109/jstqe.2022.3205340
“, hysteresis loops in the vin-vout plane), [35] outlines “fingerprints” of a system that can be used to determine whether or not a system is truly behaving as a memristor.”
BackgroundInfluentialMemristor − the fourth fundamental passive electronic component and its memory interpretation
Isah, A., Binczak, S., Tchakoutio, A., & Bilbault, J. (2022) · J3ea · doi:10.1051/j3ea/20222055
“Hence, the 3 so-called fingerprints of a memristor used to characterize memristive systems, as outlined in [3,4], are enumerated underneath.”
BackgroundA Novel Erbium-Doped Fiber Laser Chaotic Circuit Based on Memristor and Its Circuit Implementation
Wang, J.-Y., Li, H., Wang, Z.-S., & Mou, J. (2021) · IEEE Access · doi:10.1109/access.2021.3078163
“As the fourth passive element, memristor has the advantages of high speed, low power consumption, easy integration, and simple structure [27]–[29].”
BackgroundAlharbi, A. G., & Chowdhury, M. (2020) · Springer eBooks · doi:10.1007/978-3-030-51882-0_1
Emulator Circuits for the Flux-Controlled Memristive Devices
Alharbi, A. G., & Chowdhury, M. (2020) · Springer eBooks · doi:10.1007/978-3-030-51882-0_6
Generic and Practical Emulators for the Current-Controlled Memristor Models
Alharbi, A. G., & Chowdhury, M. (2020) · Springer eBooks · doi:10.1007/978-3-030-51882-0_3
The Memristor: Theory and Realization
Tahir, F. R., & Muneam, S. (2019) · SpringerBriefs in applied sciences and technology · doi:10.1007/978-3-030-11921-8_2
Rahma, F., & Muneam, S. (2019) · Memristive Nonlinear Electronic Circuits · doi:10.1007/978-3-030-11921-8_1
Hybrid perovskite characterization and device applications.
Fernando, K. (2018) · ThinkIR: The University of Louisville's Institutional Repository (University of Louisville) · doi:10.18297/etd/3017
“One of the three fingerprints [57]of being able to predict the ability of the film to act as a memristor is the frequency dependence.”
BackgroundInfluentialMathematical Modeling of Memristors
Oğuz, Y. (2018) · InTech eBooks · doi:10.5772/intechopen.73921
“When the frequency tends to infinity, the pinched hysteresis loop shrinks toward a single-valued function [6, 7].”
BackgroundNullor-Based Negative-Feedback Memristive Amplifiers: Symbolic-Oriented Modelling and Design
Sarmiento-Reyes, A., & Alarcon-Angulo, J. B. (2018) · Lecture notes in electrical engineering · doi:10.1007/978-3-319-75157-3_11
From Branly Coherer to Chua Memristor
Ginoux, J., & Cuff, T. (2018) · Springer eBooks · doi:10.1007/978-3-030-04483-1_1
Memristor Platforms for Pattern Recognition Memristor Theory, Systems and Applications
Secco, J. (2017) · doi:10.6092/polito/porto/2680573
“The circuit presented also exhibits the 3 fingerprints of memristor behaviour as described in [14, 103].”
Background
Metadata
- Authors
- Adhikari, S. P., Sah, M. P., Kim, H., & Chua, L. O.
- Affiliations
- Jeonbuk National University (KR)
- University of California, Berkeley (US)
- Venue
- IEEE Transactions on Circuits and Systems I: Regular Papers
- Published
- 2013-11
- Volume
- 60
- Issue
- 11
- Pages
- 3008-3021
- ISSN
- 1549-8328 (ISSN-L)
- 1558-0806
- OpenAlex
- W2084914578
- Cited by
- 659
- References
- 0
- Citations by year
- 2026: 34 · 2025: 56 · 2024: 59 · 2023: 70 · 2022: 76 · 2021: 55 · 2020: 60 · 2019: 49 · 2018: 55 · 2017: 36 · 2016: 28 · 2015: 46 · 2014: 28 · 2013: 6
- FWCI
- 21.60
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Transactions on Circuits and Systems I Regular Papers (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Physics and Astronomy › Statistical and Nonlinear Physics › Chaos control and synchronization
- Keywords
- memristors, pinched hysteresis loop, hysteresis loop area, frequency dependence, current-voltage characteristics
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