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Three Fingerprints of Memristor
Abstract
This paper illustrates that for a device to be a memristor it should exhibit three characteristic fingerprints: 1) When driven by a bipolar periodic signal the device must exhibit a “pinched hysteresis loop” in the voltage-current plane, assuming the response is periodic. 2) Starting from some critical frequency, the hysteresis lobe area should decrease monotonically as the excitation frequency increases, and 3) the pinched hysteresis loop should shrink to a single-valued function when the frequency tends to infinity. Examples of memristors exhibiting these three fingerprints, along with non-memristors exhibiting only a subset of these fingerprints are also presented. In addition, two different types of pinched hysteresis loops; the transversal (self-crossing) and the non-transversal (tangential) loops exhibited by memristors are also discussed with its identification criterion.
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“Numerous examples of pinched hysteresis loops of memristors can be found in [3], [13], [22].”
From Everything You Wish to Know About Memristors But Are Afraid to Ask (2015) · cites this paper as [13]
Citations
Cites
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Memristor—The Missing Circuit Element
Chua, L. (1971) · IEEE Transactions on Circuit Theory · doi:10.1109/tct.1971.1083337 · Cited by 10,268
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Self-citationResistance switching memories are memristors
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Self-citationMemory effects in complex materials and nanoscale systems
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“For the examples presented in [13] it was noted that non-transversal loops occurred when and are even functions of , where , but this was not a necessary condition as transversal pinched hysteresis loops were observed in unipolar resistance switching devices where and were even functions of .”
BackgroundHODGKIN–HUXLEY AXON IS MADE OF MEMRISTORS
CHUA, L., SBITNEV, V., & KIM, H. (2012) · International Journal of Bifurcation and Chaos · doi:10.1142/s021812741230011x · Cited by 319
Self-citationNonlinear circuit foundations for nanodevices, part I: the four-element torus
Chua, L. O. (2003) · Proceedings of the IEEE · doi:10.1109/jproc.2003.818319 · Cited by 263
Self-citationPinched hysteretic loops of ideal memristors, memcapacitors and meminductors must be ‘self-crossing’
Biolek, D., Biolek, Z., & Biolkova, V. (2011) · Electronics Letters · doi:10.1049/el.2011.2913 · Cited by 145
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Hidden dynamics in a fractional-order memristive Hindmarsh–Rose model
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Practical method to make a discrete memristor based on the aqueous solution of copper sulfate
Merrikh-Bayat, F., & Parvizi, M. (2016) · Applied Physics A · doi:10.1007/s00339-016-0132-6 · Cited by 2
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A compact floating 2T-1C memristor emulator circuit for RF and biomedical front-end circuits
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Flux-controlled memristor emulator for realizing adaptive intelligence
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Ion transport through reconfigurable nanoparticle-surfactant stabilized droplet interface bilayers
Wu, X., Xue, H., Fink, Z., Xia, Z., Sarma, N. A., Gan, X., Katsaras, J., Ercius, P., Rad, B., Helms, B. A., et al. (2026) · Proceedings of the National Academy of Sciences of the United States of America · doi:10.1073/pnas.2522349123 · Cited by 2
“4 D ) (34, 35).”
Dahiya, A., Rani, S., Kumar, S., & Prodromakis, T. (2025) · Frontiers in Nanotechnology · doi:10.3389/fnano.2025.1723433 · Cited by 2
Tamba, V. K., Tofou, J. T., Pham, V.-T., & Grassi, G. (2025) · Chaos, Solitons & Fractals · doi:10.1016/j.chaos.2025.117291 · Cited by 2
Jin, Y.-L., Xu, X., Gao, Y., & Liu, S.-L. (2025) · Solid-State Electronics · doi:10.1016/j.sse.2025.109129 · Cited by 2
Das, P., Pratyusha, N., Mandal, S., & Sanyal, M. (2024) · The European Physical Journal Special Topics · doi:10.1140/epjs/s11734-024-01342-9 · Cited by 2
“Despite the advancement in the development of type II memory devices through the utilization of nanomaterials [29] and their existence in physical systems [26], there remains a gap in the deployment and examination of type II nonlinear memory devices’ impact.”
The Memristor's with Microcontroller and Digital to Analog Converter Module MCP4725
Getvongsa, N., Norasan, A., Sonasang, S., & Summatta, C. (2024) · International Electrical Engineering Congress · doi:10.1109/ieecon60677.2024.10537910 · Cited by 2
“There are many models [2-9] of memristors and various emulators [10-13] have been created for use in both analog circuits [14-16] and digital [17-22].”
MethodMethodology for the implementation of Memristor models in FPGA
Torres-Arce, J., Sarmiento-Reyes, A., & Rangel-Magdaleno, J. D. J. (2023) · International Conference on Electrical Engineering, Computing Science and Automatic Control · doi:10.1109/cce60043.2023.10332901 · Cited by 2
“As reported in [17], the main fingerprint is related to the pinched hysteresis loop of the v − i curve in the memristor.”
BackgroundIon Intercalation Enabled Tunable Frequency Response in Lithium Niobite Memristors
Ghosh, A., Weidenbach, A. S., Zivasatienraj, B., McCrone, T. M., & Doolittle, W. (2023) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2022.3227498 · Cited by 2
“Memristive systems have been theorized to exhibit three characteristic fingerprints [17], including: 1) a “pinched hysteresis loop” in the voltage–current plane; 2) a hysteresis lobe area dependence on excitation frequency, such that the hysteresis lobe area decreases monotonically as the excitation frequency increase…”
BackgroundChen, B., Cheng, X., Bao, H., Yang, C., & Xu, Q. (2022) · The European Physical Journal Plus · doi:10.1140/epjp/s13360-022-03510-z · Cited by 2
“The properties of memristor are depicted by the constitutive relationship of electric charge and magnetic flux [3], and the properties of memcapacitor are described by the relationship of magnetic flux and integral of charge [4].”
BackgroundHow can ferroelectricity improve the performance of thin-layer memristors?
Szaciłowski, K. (2022) · International Semiconductor Conference · doi:10.1109/cas56377.2022.9934691 · Cited by 2
CMOS Memristor Hybrid Circuit based High Speed Low Power Multiplier Design
Mishra, A., & Nigam, S. (2022) · International Conference Electronic Systems, Signal Processing and Computing Technologies [ICESC-] · doi:10.1109/icesc54411.2022.9885382 · Cited by 2
“[1][2] As the resistance of the memristor changes with either the voltage polarity or applied current a memristor can also be termed as a resistor with memory.”
BackgroundInfluentialLow Power High Speed Full Adder Design Using CMOS Memristor Hybrid Circuits
Mishra, A., & Singh, K. (2022) · 2022 2nd International Conference on Intelligent Technologies (CONIT) · doi:10.1109/conit55038.2022.9848115 · Cited by 2
“[2] Chua also proposed the 3 fingerprints of memristor characterizing its unique features: When I-V characteristic of memristor for a sinusoidal input is plotted a hysteresis loop or the Lissajous figure is obtained and the current and voltage have the same value at origin.”
BackgroundInfluentialAddressing crosstalk in crossbar memory arrays with a resistive switching ZnO homojunction diode
Mainali, P., Bastatas, L. D., Echeverria, E. M., Wagle, P., Sankaran, P., & McIlroy, D. (2021) · Journal of Applied Physics · doi:10.1063/5.0050564 · Cited by 2
Analytic Modeling for RRAM Based on Multistage Homotopy Analysis Method
Hu, W., Luo, H., Chen, C.-D., & Wei, R.-S. (2020) · IEEE transactions on nanotechnology · doi:10.1109/tnano.2020.2972298 · Cited by 2
“From fingerprint theory of RRAM [56] and the description of the MuHAM modeling procedure in Section II, the type of the input signal directly affects the nonlinearity of state equation and thus indirectly affects the MuHAM solving of the state equation.”
MethodCharacterization and modelling of Ag/TiO2/ITO devices exhibiting bipolar memristive properties
Jiménez-León, J., Sarmiento-Reyes, A., Blas, C. A. D. L. C., & Gómez-Polo, C. (2017) · International Caribbean Conference on Devices, Circuits and Systems · doi:10.1109/iccdcs.2017.7959704 · Cited by 2
Equivalent realisation circuit for a class of non-ideal voltage-controlled memristors
Pan, S., Jiang, P., & Bao, B. (2015) · The Journal of Engineering · doi:10.1049/joe.2015.0051 · Cited by 2
Memristor state-space embedding
Dghais, W., Alves, L. N., Mendes, J., Rodriguez, J., & Pedro, J. (2015) · European Conference on Circuit Theory and Design · doi:10.1109/ecctd.2015.7300040 · Cited by 2
The Art and Science of Constructing a Memristor Model: Updated
Kumar, S., Gibson, G. A., Graves, C. E., Pickett, M. D., Strachan, J. P., & Williams, R. S. (2019) · Springer eBooks · doi:10.1007/978-3-319-76375-0_9 · Cited by 3
Bifurcation and Periodic Solutions in Memristive Hyperchaotic System
Zhong, X., Peng, M., Shahidehpour, M., & Guo, S. (2018) · IEEE Access · doi:10.1109/access.2018.2829207 · Cited by 3
“Owing to the nonlinearity of the memristor element, the memristor-based circuits are able to generate a chaotic signal with ease and reproduce the complicated and unpredictable behavior [1], [4], [6].”
BackgroundGraphical modelling of pinched hysteresis loops of memristors
Wang, X.-M., & Hui, S. (2017) · IET Science Measurement & Technology · doi:10.1049/iet-smt.2016.0210 · Cited by 2
“The three fingerprints of a memristor are summarized [20] as: 1) Pinched hysteresis loop at origin Page 1 of 21”
MethodLi, X., Zhang, Y.-B., Liu, S., & Sun, W.-G. (2026) · Chaos · doi:10.1063/5.0339271 · Cited by 1
Kalra, A., Pandey, N., & Rai, S. K. (2026) · Integr. · doi:10.1016/j.vlsi.2026.102740 · Cited by 1
A four MOSFETs based grounded memristor emulator
Kumar, N., Pandey, N., Kumar, M., & Kumar, M. (2026) · Analog Integrated Circuits and Signal Processing · doi:10.1007/s10470-026-02602-5 · Cited by 1
Bhardwaj, K., Nehal, A., Semenov, D., Šotner, R., & Majumdar, S. (2026) · Advanced Electronic Materials · doi:10.1002/aelm.202500873 · Cited by 1
Poreddy, A. K. R., Dixit, T., Rushendra, B., & Kokil, P. (2026) · Semiconductor Science and Technology · doi:10.1088/1361-6641/ae5ccb · Cited by 1
“The primary issues associated with the linear ion-drift models are lack of precision, distorted phase hysteresis loop (PHL), boundary effects, boundary lock, threshold limitations, and inflexibility [27–29].”
Duan, Z.-K., Yang, D., He, S.-B., Yu, X.-M., Tang, Z.-R., & Wu, Q. (2026) · Integr. · doi:10.1016/j.vlsi.2025.102601 · Cited by 1
A survey on analog memristor emulators and their applications
Shaheen, F., Azab, E., & Hassan, A. (2026) · AEU - International Journal of Electronics and Communications · doi:10.1016/j.aeue.2026.156223 · Cited by 1
Memristor loaded cross-coupled differential voltage sense amplifier design with improved performance
Musiiwa, P., Akashe, S., Upadhyay, G. M., & Sharma, S. (2025) · Scientific Reports · doi:10.1038/s41598-025-00056-9 · Cited by 1
“The device is a nano-device with flux-linkage that depends on the charge passing and has pinched hysteresis characteristics 37,38 , where voltage– current characteristics of the device depict a pinched loop 30 .”
Kumar, P., & Srivastava, M. (2025) · Analog Integrated Circuits and Signal Processing · doi:10.1007/s10470-025-02410-3 · Cited by 1
“Furthermore, the plotted v-i contour should experience a reduction in span as the operating signal frequency increases [ 5 ].”
Research on Memristor-Based Neural Networks
Ling, H. (2024) · Transactions on Computer Science and Intelligent Systems Research · doi:10.62051/0ra1w557 · Cited by 1
“Currently managed HP memristors [1-3].”
Chaotic dynamics in a class of generalized memristive maps.
Hussan, I., Zhao, M., & Zhang, X. (2024) · Chaos · doi:10.1063/5.0237251 · Cited by 1
Xu, L., Huang, C., Huang, G., & He, D.-Y. (2024) · Scientific Reports · doi:10.1038/s41598-024-75537-4 · Cited by 1
“17 and 18, it can be seen that compared to fractances and memristors, the dynamic behavior of FMS is more complex.”
BackgroundMemristor Modeling with Homeostatic Threshold Variation for Simulation and Application
Shi, X.-M., & Wang, Z.-L. (2023) · International Conference on Computing, Networking and Communications · doi:10.1109/icnc59488.2023.10462883 · Cited by 1
“In [3], Adhikari presented three characteristics that memristive device or system must satisfy, including pinched hysteresis loop, hysteresis lobe area decreasing as frequency increases and pinched hysteresis loop shrinking to a single-valued function respectively.”
BackgroundFinding Coexisting and Multi-Cavity Chaotic Attractors in Memristor-Based Hénon Map
Wu, Q., Wu, Y.-L., Meng, J., & Ma, P. (2023) · 2023 IEEE International Conference on Memristive Computing and Applications (ICMCA) · doi:10.1109/icmca59770.2023.10480997 · Cited by 1
“Simulation results confirm that the discrete memristor models exhibit the three distinct fingerprints of a memristor [33].”
BackgroundModeling and Nonlinear Characteristics Analysis of Fluorescent Lamp Driven by a Full-Bridge Inverter
Yang, J.-H., Wang, F.-Q., & Wang, X. (2023) · Energies · doi:10.3390/en16186622 · Cited by 1
“Here, according to the model parameters given in Ref [15], the approximate fitting is performed on equations a5T−0.”
BackgroundMethodInfluentialWang, L., Liu, B., Li, K., Zhu, G., & Zhang, L. (2023) · 2023 5th International Conference on Electronics and Communication, Network and Computer Technology (ECNCT) · doi:10.1109/ecnct59757.2023.10280985 · Cited by 1
A Novel Dynamic Memristor Window Function for High Frequency Applications
Ananda, Y. R., Das, S., & Trivedi, G. (2023) · IEEE International New Circuits and Systems Conference · doi:10.1109/newcas57931.2023.10198059 · Cited by 1
“These observations constitute vital fingerprints [13] of the memristor incorporating our proposed window function and validate its effectiveness.”
BackgroundRobust and potential applications of memristors
Mustaqueem, Z., Ansari, A. Q., & Akram, M. (2023) · 2023 International Conference on Power, Instrumentation, Energy and Control (PIECON) · doi:10.1109/piecon56912.2023.10085896 · Cited by 1
“Equation (1) explaining the behaviour of memristor with minimum and maximum resistances [8] are:”
BackgroundMethodInfluentialBhardwaj, K., & Srivastava, M. (2022) · Radioengineering · doi:10.13164/re.2022.0374 · Cited by 1
“The associated fingerprints of the PHL curve have been discussed in [10].”
BackgroundAn internally-controlled memristor-based amplitude shift keying modulator
Maxwell, C., Yu, D., & Leng, Y. (2021) · Circuit World · doi:10.1108/cw-06-2020-0104 · Cited by 1
A four-dimensional memristor chaotic system based on Colpitts oscillator
Li, S., Dong, E.-Z., & Zhang, Z. (2020) · ACM Cloud and Autonomic Computing Conference · doi:10.1109/cac51589.2020.9327361 · Cited by 1
A Novel Bipolar Photon-Controlled Generalized Memristor Based on Avalanche Photodiode
Hao, J., Jin, X., & Peng, B. (2020) · J. Circuits Syst. Comput. · doi:10.1142/s0218126621500900 · Cited by 1
A New Fractional Order Memristance Simulator Circuit Design
Taskiran, Z. G. C., & Taşkıran, M. (2019) · International Symposium on INnovations in Intelligent SysTems and Applications · doi:10.1109/inista.2019.8778386 · Cited by 1
Memristor Based on the Contact of Two Metal Balls
García-Paniagua, J. C., & Pérez-Alcázar, P. (2018) · IEEE Sensors Journal · doi:10.1109/jsen.2018.2864585 · Cited by 1
“Figures 13 and 14 show that the TBM fulfills the second and third fingerprints of the memristor [25], i.”
BackgroundInfluentialAn N-Shaped I-V Characteristic Circuit with a Mem-impedance Feature
Wey, T. A. (2018) · IEEE International Midwest Symposium on Circuits and Systems (MWSCAS) · doi:10.1109/mwscas.2018.8624066 · Cited by 1
“6 consistent with the fingerprints of a memory impedance [16].”
BackgroundOn N-Shaped I-V Characteristic Devices with Memristive Behavior
Wey, T. A. (2018) · IEEE International New Circuits and Systems Conference (NEWCAS) · doi:10.1109/newcas.2018.8585604 · Cited by 1
“As the sinusoidal frequency continues to increase, this response collapses to a positive differential conductance, consistent with the fingerprints of memristance [15].”
ResultA Clock-Tuned Digital Memristor Emulator
Weldon, T. P., Kehoe, P., & Steer, K. K. (2018) · International Symposium on Circuits and Systems · doi:10.1109/iscas.2018.8351025 · Cited by 1
“dent [18], it is advantageous to be able to tune a memristor such that desired characteristics (such as a particular desired v–i curve) may occur at some specific frequency for an application.”
BackgroundAnalytical Study on the Influence of Parasitic Elements in a Memristor
Chandía, K., Bologna, M., & Tellini, B. (2018) · Mathematical Problems in Engineering · doi:10.1155/2018/2640591 · Cited by 1
Exploring a Novel Methodology for DC Analysis in Memristive Circuits with Multiple Operating Points
Hernández-Mejía, C., Torres-Muñoz, D., & Vázquez-Leal, H. (2017) · Circuits, systems, and signal processing · doi:10.1007/s00034-017-0677-4 · Cited by 1
“The possible causes of overuse the transient domain to generate memristive models are: the principal fingerprints of the memristors [1] are displayed in the time domain, the absence of semi-symbolical expressions to represent the behavior of memristive systems and themisunderstanding of the DC response.”
BackgroundA novel memristor-based amplitude modulator
Hu, W., & Chen, C.-D. (2016) · International Conference on Computational Photography · doi:10.1109/iccps.2016.7751102 · Cited by 1
“One of the typical fingerprints of memristor is defined as follows [6]: the I–V hysteresis lobe area should decrease monotonically as the external excitation frequency increases, that is, when the frequency exceed critical point, the memristor will work as a linear resistor.”
BackgroundMemristive behaviour of high-impedance faults
Tisserand, E., Berviller, Y., & Humbert, J.-B. (2016) · Electronics Letters · doi:10.1049/el.2015.3738 · Cited by 1
Memristive fingerprints of electric arcsPreprint
Marszalek, W. (2015) · arXiv.org · doi:10.48550/arxiv.1601.01612 · Cited by 1
“That research has been significantly expanded in the last few years, see [16]-[23] and references therein.”
BackgroundA low-complexity circuit model of hysteresis
Biggio, M., Stellino, F., Parodi, M., & Storace, M. (2015) · International Symposium on Circuits and Systems · doi:10.1109/iscas.2015.7168886 · Cited by 1
“The hysteresis phenomenon is ubiquitous in science and technology [1], [2]; for instance, besides the classical fields of mechanics, magnetism, ferroelectric materials, it has been observed in memristive electronic circuits [3], biology [4], [5], economics [6], [7], and ecology [8], [9].”
BackgroundKhalique, A., Falco, G. D., Minutolo, P., Commodo, M., & D'Anna, A. (2026) · Materials Science in Semiconductor Processing · doi:10.1016/j.mssp.2025.110125 · Cited by 1
Singh, T., & Ramadan, M. (2021) · Reference Module in Materials Science and Materials Engineering · doi:10.1016/b978-0-12-815732-9.00148-0 · Cited by 1
Simple Current-Controlled Memristor Emulators
Alharbi, A. G., & Chowdhury, M. (2020) · Memristor Emulator Circuits · doi:10.1007/978-3-030-51882-0_4 · Cited by 1
The Effects of Radiation on Memristor-Based Electronic Spiking Neural Networks
Dahl, S. G. (2020) · doi:10.18122/td/1713/boisestate · Cited by 1
A Simple Oscillator Using Memristor
Sah, M. P., Rajamani, V., Mannan, Z. I., Eroglu, A., Kim, H., & Chua, L. O. (2017) · Studies in computational intelligence · doi:10.1007/978-3-319-51724-7_2 · Cited by 5
“4 that the pinched hysteresis loops shrink as the frequencies increase and tend to a straight line at 5 Hz (Adhikari et al. 2013; Mannan et al. 2016; Rajamani et al. 2016).”
BackgroundSelf-citationKengne, J., Leutcho, G. D., & Telem, A. N. K. (2018) · Analog Integrated Circuits and Signal Processing · doi:10.1007/s10470-018-1372-5 · Cited by 33
“Also, the generalized memristor shows the three signature fingerprints for identifying a memristor [3].”
BackgroundInfluentialAnalog Emulator of Genuinely Floating Memcapacitor with Piecewise-Linear Constitutive Relation
Biolek, D., Biolková, V., Kolka, Z., & Dobes, J. (2015) · Circuits, systems, and signal processing · doi:10.1007/s00034-015-0067-8
“When gradually increasing the repeating frequency, one can demonstrate the well-known fingerprint of the diminishing area of the loop [2,16].”
BackgroundA Family of Memristive-Transfer Functions of Negative-Feedback Nullor-Based Amplifiers
Hernández-Mejía, C., Sarmiento-Reyes, A., & Vázquez-Leal, H. (2015) · Circuits, systems, and signal processing · doi:10.1007/s00034-015-0013-9
“It possesses the main fingerprints of a passive memristor [2], such as pinched hysteresis loop, hysteresis lobe area and shrunken hysteresis loop.”
BackgroundThe memristive system behavior of a diac
Karakulak, E., & Mutlu, R. (2020) · Journal of Computational Electronics · doi:10.1007/s10825-020-01495-5
Holding State Performance Amelioration by Exploitation of NMOS Body Effect in 1T DRAM Cells
Musiiwa, P., & Akashe, S. (2017) · Wireless personal communications · doi:10.1007/s11277-017-5036-z
A family of unbiased wideband discrete memristor emulators
Cao, H.-B., Wang, R.-Z., Li, Y.-X., Guo, X., Jiao, S.-B., Kou, S.-C., & Zhang, X.-N. (2027) · AEU - International Journal of Electronics and Communications · doi:10.1016/j.aeue.2026.156645
Brain-region cooperative firing in multilayer memristive ring-star neural network
Luo, N.-H.-P.-W.-S.-F., Yang, X.-B., Tong, Y.-N., & Li, C.-L. (2026) · Chaos, Solitons & Fractals · doi:10.1016/j.chaos.2026.119365
Wang, T.-F., Yan, Z.-J., Tan, A., Chai, Y., Song, H.-T., & Zhu, R. (2026) · Physics Letters · doi:10.1016/j.physleta.2026.132134
Causality as an emergent property of biochemical learning: A theory of pre-cognitive inference
Vallverdú, J., Mougkogiannis, P., Szacilowski, K. T., Gunji, Y., Gentili, P. L., & Adamatzky, A. (2026) · Biosystems · doi:10.1016/j.biosystems.2026.105994
A memristive parameter-driven chaotic map: design, analysis, implementation, and PRNG application
Wang, Q., Liu, W.-J., Sang, H.-W., Wu, X.-M., Wang, P., & Tian, H.-G. (2026) · Physica Scripta · doi:10.1088/1402-4896/ae92dc
“All the above prove that the model satisfies the properties of a general ideal memristor [22].”
Zarqa, & Kumar, A. (2026) · Integration · doi:10.1016/j.vlsi.2026.102758
Feng, B., Liu, Z., Feng, J., & Chen, G. (2026) · Neural Networks · doi:10.1016/j.neunet.2026.109326 · Cited by 1
Exploring Mem-element Emulators: A Review
Gupta, R. K., Saxena, V., & Choudhry, M. (2026) · Memories - Materials, Devices, Circuits and Systems · doi:10.1016/j.memori.2026.100146
Huang, L., Zang, H., Fu, H., Liu, Y., Lei, T., & Wang, Z. Y. (2026) · Physica Scripta · doi:10.1088/1402-4896/ae7fbd
“According to the three essential characteristics of the memristor [42], it can be seen from figure 1 that the input voltage v m = Asin(2 π Ft ).”
Dong, P.-S., Wang, L., Zhang, D., Wang, J., & Liu, B. (2026) · Microsystem Technologies · doi:10.1007/s00542-026-06069-2
“Also, according to (Chua 1971 , Adhikari et al. 2013 ), the universal mathematical model of computing the mem-ristance value can be defined as follows: where R ( t ) is the resistance value at t time, R ON and R OFF represent the resistance values in the low-resistance (on) and high-resistance…”
Lu, Y.-M., Zhang, L., & Deng, Y. (2026) · Physica A: Statistical Mechanics and its Applications · doi:10.1016/j.physd.2026.135319
Suklabaidya, S., Singh, P., & Roy, B. (2026) · 2026 IEEE North-East India International Energy Conversion Conference and Exhibition (NE-IECCE) · doi:10.1109/ne-iecce69680.2026.11665952
“1 clearly illustrates the fundamental fingerprint properties of the newly designed memristive function [29].”
Dynamical analysis of r-Chialvo neuron map with cosine memristive
Kumar, A., & Chandramouli, V. (2026) · doi:10.48550/arxiv.2605.00442
“As discussed in [23], the PHLs are the v − i characteristic curves of the memristor, which depends on the different amplitudes and frequencies of the applied signal.”
Non-transversal Memristor Emulator: A Novel MOS-C Realization
Dwivedi, A., & Sharma, R. K. (2026) · 2026 9th International Conference on Trends in Electronics and Informatics (ICOEI) · doi:10.1109/icoei68323.2026.11541839
“3 (a), (b) [23].”
InfluentialErtekin, N., & Lei, W. (2026) · AEU - International Journal of Electronics and Communications · doi:10.1016/j.aeue.2025.156107
Dynamical Analysis of a Hyperchaotic Oscillator with Flux-Controlled Memristive Nonlinearity
Suklabaidya, S., Singh, P., & Roy, B. K. (2025) · International Conference on Intelligent Cloud Computing · doi:10.1109/icc69100.2025.11372252
Effects of Different Conductance Mechanisms and Temperature on Memristive Neural Networks
Ghadge, A., Kumar, A., & Bag, M. (2025) · Physica Status Solidi (a) · doi:10.1002/pssa.202500536
“This nonlinear behavior enables memristors to exhibit a distinctive pinched hysteresis loop in their current – voltage characteristics [37], a required property that distinguishes them from other circuit elements [38].”
Suklabaidya, S., Tariang, D., Singh, P., & Roy, B. (2025) · 2025 IEEE 4th International Conference on Smart Technologies for Power, Energy and Control (STPEC) · doi:10.1109/stpec66316.2025.11490925
“This loop always passes through the origin and changes shape with input frequency, which clearly shows that the device confirms its memristive nature [6].”
Modeling homosynaptic and heterosynaptic plasticity with a single neuromemristive synapse
Mannan, Z. I., Azam, S., Budhathoki, R. K., Alam, M. N., & Kim, H. (2025) · Journal of Advanced Research · doi:10.1016/j.jare.2025.10.031
Self-citationA Floating-Ground Logarithmic Mathematical Memristor Model and Its Emulator
Yuan, X., Li, T., Wang, C., Su, K., Li, Z., Guo, F., Zhu, K., & Xi, X. (2025) · 2025 International Conference on Advanced Semiconductor Devices and Integration Technology (ASDIT) · doi:10.1109/asdit66826.2025.11291036
“The equivalence of a circuit to a memristor is determined by whether its input port exhibits three fundamental memristor characteristics [8]: 1) Pinched Hysteresis Criterion: When driven by a bipolar periodic signal, the input port must exhibit a frequency-dependent pinched hysteresis loop in the…”
2-MOSFET Dynamic Threshold-Based Reversible & Bipolar Unbiased Inverse-Memristor Emulator
Srivastava, P., Kumar, P., & Ranjan, R. K. (2025) · International Conference on Modern Circuits and Systems Technologies · doi:10.1109/mocast65744.2025.11083917
“Various studies have explored and documented the behavior and properties of mem-ristors, as outlined in [2], [3].”
Xia, H., Bo, H., Kuang, J., Wang, J., & Jin, X.-L. (2025) · International Conference on Communications, Circuits and Systems · doi:10.1109/icccas65806.2025.11102511
“Its volt-ampere characteristic curve shrinks to a single-valued function over the origin, presenting externally as a linear resistor[7].”
Modified DDCCTA based Memristor Emulator circuit for Incremental and Decremental mode
Dutta, S., Mahato, L., Kumari, N., Kumari, K., Singh, A., & Kumar, H. (2025) · 2025 International Conference on Recent Advances in Electrical, Electronics, Ubiquitous Communication, and Computational Intelligence (RAEEUCCI) · doi:10.1109/raeeucci63961.2025.11048275
MODELOVANJE MEMRISTORA KORIŠĆENJEM TEORIJE HISTEREZISA
Bratic, S. (2025) · Zbornik radova Fakulteta tehničkih nauka u Novom Sadu · doi:10.24867/30be50bratic
“Primer 1 iz [2] i [3]: Termistor.”
Nonlinearity in Memristor Materials - A Review
Poornima, S., & Dutta, K. (2025) · Journal of Mines, Metals and Fuels · doi:10.18311/jmmf/2023/47974
“The value of memristance depends on the duty cycle, duration, amplitude, and frequency of the applied signal 8,9 .”
ZnO-Based Memristive Device for Temperature Sensing: Design, Modeling, and Performance Evaluation
Rathnakannan, K., & Kumar, C. S. A. (2024) · Journal of Electronics and Electrical Engineering · doi:10.37256/jeee.3220245473
“Furthermore, their non-volatile architecture facilitates efficient trade-off computing by reducing off-chip memory access times by 30–70% compared to traditional architectures, depending on workload and memory size [5, 6].”
BackgroundCircuit-based New Type-II Nonlinear Memristor for Neuromorphic Applications
Sanyal, M., Mandal, S., & Das, P. (2024) · 2024 12th International Conference on Internet of Everything, Microwave, Embedded, Communication and Networks (IEMECON) · doi:10.1109/iemecon62401.2024.10846011
“The ideal memristor, extended memristor, and universal memristor fall under type I while the type II memristive hysteresis loop can be achieved using a current-controlled discharge tube, thermistor, Tungsten filament lamp, Compact Fluorescent Lamp (CFL) [4], memcapacitive or meminductor models [6].”
Implementation of Floating Charged Memristor Emulator utilizing DVCCTA
Bhuwal, N., Majumder, M., & Gupta, D. (2024) · International Symposium on Circuits and Systems · doi:10.1109/iscas58744.2024.10558254
“This aligns with another distinctive feature outlined in [24].”
BackgroundSimulation and Analysis of Basic Characteristics of Several Memristor Mathematical Models
Yuan, X., Li, T., Li, Z., Su, K., Wang, C., Zou, X.-F., & Wang, Q. (2024) · 2024 9th International Conference on Electronic Technology and Information Science (ICETIS) · doi:10.1109/icetis61828.2024.10593720
“Memristor has the following three fingerprints [5]: 1) under the excitation of a bipolar periodic signal, the device exhibits a pinched hysteresis loop in the I-V plane; 2) hysteresis lobe area decreases as frequency increase; 3) pinched hysteresis loop shrinks to a single-valued function at…”
BackgroundExamination of Resistive Switching Energy of Some Nonlinear Dopant Drift Memristor Models
TAN, R. K., Mert, O., & MUTLU, R. (2024) · Informacije MIDEM - Journal of Microelectronics Electronic Components and Materials · doi:10.33180/infmidem2024.103 · Cited by 2
“A memristor model must have the three fingerprints of a memristor as explained in [57].”
Floating Type Memristor Emulator with Single DVCC Active Block for High Frequency Applications
Khobragade, M., Supugade, P., & Mech, B. C. (2023) · 2023 International Conference on Next Generation Electronics (NEleX) · doi:10.1109/nelex59773.2023.10421574
“Three main characteristics of memristor were proposed [6] which include (a) when input current vs input voltage is plotted in a current-voltage plane, a pinched hysteresis is observed (b) at higher frequencies the memristor will work as a linear resistor (c) the frequency is inversely proportional…”
Background
Metadata
- Authors
- Adhikari, S. P., Sah, M. P., Kim, H., & Chua, L. O.
- Affiliations
- Jeonbuk National University (KR)
- University of California, Berkeley (US)
- Venue
- IEEE Transactions on Circuits and Systems I: Regular Papers
- Published
- 2013-11
- Volume
- 60
- Issue
- 11
- Pages
- 3008-3021
- ISSN
- 1549-8328 (ISSN-L)
- 1558-0806
- OpenAlex
- W2084914578
- Cited by
- 659
- References
- 0
- Citations by year
- 2026: 34 · 2025: 56 · 2024: 59 · 2023: 70 · 2022: 76 · 2021: 55 · 2020: 60 · 2019: 49 · 2018: 55 · 2017: 36 · 2016: 28 · 2015: 46 · 2014: 28 · 2013: 6
- FWCI
- 21.60
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Transactions on Circuits and Systems I Regular Papers (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Physics and Astronomy › Statistical and Nonlinear Physics › Chaos control and synchronization
- Keywords
- memristors, pinched hysteresis loop, hysteresis loop area, frequency dependence, current-voltage characteristics
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