The DOI matches its Crossref record; 8 of the 8 references it cites were found in a registry or an index.
Three Fingerprints of Memristor
Abstract
This paper illustrates that for a device to be a memristor it should exhibit three characteristic fingerprints: 1) When driven by a bipolar periodic signal the device must exhibit a “pinched hysteresis loop” in the voltage-current plane, assuming the response is periodic. 2) Starting from some critical frequency, the hysteresis lobe area should decrease monotonically as the excitation frequency increases, and 3) the pinched hysteresis loop should shrink to a single-valued function when the frequency tends to infinity. Examples of memristors exhibiting these three fingerprints, along with non-memristors exhibiting only a subset of these fingerprints are also presented. In addition, two different types of pinched hysteresis loops; the transversal (self-crossing) and the non-transversal (tangential) loops exhibited by memristors are also discussed with its identification criterion.
Overview
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
In the citing paper
“Numerous examples of pinched hysteresis loops of memristors can be found in [3], [13], [22].”
From Everything You Wish to Know About Memristors But Are Afraid to Ask (2015) · cites this paper as [13]
Citations
Cites
Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,828
Memristor—The Missing Circuit Element
Chua, L. (1971) · IEEE Transactions on Circuit Theory · doi:10.1109/tct.1971.1083337 · Cited by 10,268
Self-citationMemristive devices and systems
Chua, L. O., & Kang, S. M. (1976) · Proceedings of the IEEE · doi:10.1109/proc.1976.10092 · Cited by 2,604
Self-citationResistance switching memories are memristors
Chua, L. (2011) · Applied Physics A · doi:10.1007/s00339-011-6264-9 · Cited by 1,434
Self-citationMemory effects in complex materials and nanoscale systems
Pershin, Y. V., & Di Ventra, M. (2011) · Advances In Physics · doi:10.1080/00018732.2010.544961 · Cited by 823 · cited 1×
“For the examples presented in [13] it was noted that non-transversal loops occurred when and are even functions of , where , but this was not a necessary condition as transversal pinched hysteresis loops were observed in unipolar resistance switching devices where and were even functions of .”
BackgroundHODGKIN–HUXLEY AXON IS MADE OF MEMRISTORS
CHUA, L., SBITNEV, V., & KIM, H. (2012) · International Journal of Bifurcation and Chaos · doi:10.1142/s021812741230011x · Cited by 319
Self-citationNonlinear circuit foundations for nanodevices, part I: the four-element torus
Chua, L. O. (2003) · Proceedings of the IEEE · doi:10.1109/jproc.2003.818319 · Cited by 263
Self-citationPinched hysteretic loops of ideal memristors, memcapacitors and meminductors must be ‘self-crossing’
Biolek, D., Biolek, Z., & Biolkova, V. (2011) · Electronics Letters · doi:10.1049/el.2011.2913 · Cited by 145
Flagged first, then by citations
Research works printed but not linked: 12
- 10.1109/TCSII.2012.2208670 · DOI
- 10.1049/el.2012.1480 · DOI · Paper page
- francis, 1948, Fundamentals of Discharge Tube Circuits
- chua, 1969, Introduction to Nonlinear Network Theory
- 10.1088/0143-0807/22/4/313 · DOI
- 10.1109/TPEL.2007.909313 · DOI
- mouttet, 2012, Memresistors and non-memristive zero crossing hysteresis curves, arXiv 1201 2626v3
- parker, 1998, Practical Numerical Algorithms for Chaotic Systems
- 10.1038/nmat3338 · DOI
- chua, 2009, Introduction to memristors, IEEE Expert Now Educational Course
- kim, 2012, Pinched hysteresis loops is the fingerprint of memristive devices, arXiv 1202 2437v2
- 10.1109/JPROC.2012.2190814 · DOI
Cited by
Sorted by citations
Items 201–300 of 541
Taskiran, Z. G. C., Ayten, U. E., & Sedef, H. (2018) · Circuits, systems, and signal processing · doi:10.1007/s00034-018-0856-y · Cited by 18
“In order to be called a circuit as a memristance simulator, the circuit should exhibit a pinched hysteresis loop in the voltage–current plane when driven by a bipolar periodic signal, the hysteresis lobe area should decrease monotonically as the excitation frequency increases and the pinched hysteresis loop should shr…”
Electrophysiology of pumpkin seeds: Memristors in vivo
Volkov, A., Nyasani, E. K., Tuckett, C., Greeman, E., & Markin, V. S. (2016) · Plant Signalling & Behavior · doi:10.1080/15592324.2016.1151600 · Cited by 18
Lin, H., Li, Z., Zhang, Y., Deng, X., Chen, X., & Min, G. (2026) · Chaos Solitons & Fractals · doi:10.1016/j.chaos.2026.117905 · Cited by 21
Zhang, J., Yang, L., Zuo, J., Wei, X., & Cheng, N. (2025) · Chaos, Solitons & Fractals · doi:10.1016/j.chaos.2025.116662 · Cited by 18
Huang, H., Dai, G., Wu, X.-H., Wu, Y., Wei, A., & Liu, Z. (2024) · Materials Science in Semiconductor Processing · doi:10.1016/j.mssp.2023.108073 · Cited by 17
Colpitts Chaotic Oscillator Coupling with a Generalized Memristor
Lu, L., Li, C.-D., Zhao, Z., Bao, B., & Xu, Q. (2015) · Mathematical Problems in Engineering · doi:10.1155/2015/249102 · Cited by 17
A feasible memristive Chua's circuit via bridging a generalized memristor
Xu, Q., Wang, N., Bao, B., Chen, M., & Li, C.-D. (2016) · Journal of Applied Analysis & Computation · doi:10.11948/2016076 · Cited by 17
“Unfortunately, due to technical handicaps in fabricating nano-scale devices, various kinds of memristive equivalent circuits which can manifest the three fingerprints of memristors [1] have attracted much attention [5].”
BackgroundMemristor: Models, Types, and Applications
Radwan, A. G., & Fouda, M. E. (2015) · Studies in systems, decision and control · doi:10.1007/978-3-319-17491-4_2 · Cited by 20
A novel second generation current conveyor (CCII)-based high frequency memristor model
Kumar, P., Kaushik, B. K., & Ranjan, R. (2023) · Microelectronic Engineering · doi:10.1016/j.mee.2023.111938 · Cited by 16
Spreading Operation Frequency Ranges of Memristor Emulators via a New Sine-Based Method
Cao, H., & Wang, F. (2021) · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · doi:10.1109/tvlsi.2021.3056472 · Cited by 21
“Hence, the improved memristor described by (25) can present essential characteristics used to identify memristor [3].”
BackgroundInfluentialRevisiting the memristor concept within basic circuit theory
Tellini, B., Bologna, M., Chandía, K., & Macucci, M. (2021) · International journal of circuit theory and applications · doi:10.1002/cta.3111 · Cited by 16
“The properties that they are expected to exhibit are: a) In [17] the authors report that the v − i relationship shows a pinched hysteresis loop for a periodic input signal or equivalently, as stated by Chua in [19], all memristive systems are characterized by the property that a zero output corresponds to a zero input…”
BackgroundMemristive operation mode of a site-controlled quantum dot floating gate transistor
Maier, P., Hartmann, F., Mauder, T., Emmerling, M., Schneider, C., Kamp, M., Hofling, S., & Worschech, L. (2015) · Applied Physics Letters · doi:10.1063/1.4921061 · Cited by 16
A Circuit Model of Hysteresis and Creep
Biggio, M., Oliveri, A., Stellino, F., Parodi, M., & Storace, M. (2015) · IEEE Transactions on Circuits and Systems - II - Express Briefs · doi:10.1109/tcsii.2014.2385412 · Cited by 16
“HYSTERESIS is an ubiquitous phenomenon in science and technology [1]–[5]; it has been observed in many seemingly unrelated scientific areas, including electronic circuits (for instance, it is one of the fingerprints of memristors [6] and is exploited in hyperchaotic circuits [7]), mechanics, magnetism, ferroelectric m…”
BackgroundA Compact Floating and Grounded Memristor model using Single Active Element
Prasad, S. S. S., Kumar, P., Raj, N., Sharma, P. K., Priyadarshini, B., Ranjan, R. K., & Prommee, P. (2022) · AEU - International Journal of Electronics and Communications · doi:10.1016/j.aeue.2022.154426 · Cited by 15
Dynamical Models of Electric Arcs and Memristors: The Common Properties
Marszalek, W., & Trzaska, Z. (2017) · IEEE Transactions on Plasma Science · doi:10.1109/tps.2016.2645879 · Cited by 15
“That research has been significantly expanded in the last few years (see [19]–[29] and references therein).”
BackgroundWan, Z., Pu, Y.-F., & Lai, Q. (2025) · Neural Networks · doi:10.1016/j.neunet.2025.107473 · Cited by 14
An overview memristor based hardware accelerators for deep neural network
Gökgöz, B., Gül, F., & Aydın, T. (2024) · Concurrency and Computation Practice and Experience · doi:10.1002/cpe.7997 · Cited by 19
“43,44 Chua’s current–voltage characteristic.”
Zhang, X., Wu, H.-N., Wang, J.-L., Liu, Z., & Li, R.-X. (2022) · Neurocomputing · doi:10.1016/j.neucom.2022.09.126 · Cited by 14
SPICE Simulation of RRAM-Based Cross-Point Arrays Using the Dynamic Memdiode Model
Aguirre, F. L., Pazos, S. M., Palumbo, F., Suñé, J., & Miranda, E. A. (2021) · Frontiers in Physics · doi:10.3389/fphy.2021.735021 · Cited by 16
“From the electrical viewpoint, the behavior of a memristive device has some major fi ngerprints [47,48]: i) a pinched hysteresis loop in the I-V characteristic, ii) the decrease of the hysteresis lobe area as the input signal frequency increases, and iii) the shrinking of the pinched hysteresis loop…”
BackgroundDynamic analysis and chaos control of the switched‐inductor boost converter with the memristive load
Zhang, J.-P., Yang, Y., & Wang, D.-Q. (2021) · International journal of circuit theory and applications · doi:10.1002/cta.3022 · Cited by 14
Design rules for carbazole derivatized n-alkyl methacrylate polymeric memristors
McFarlane, T. M., Zdyrko, B., Bandera, Y. P., Worley, D., Klep, O., Jurča, M., Tonkin, C., Foulger, S., Vilčáková, J., Saha, P., et al. (2018) · Journal of Materials Chemistry C · doi:10.1039/c7tc05001a · Cited by 14
Simple generic memristor emulator for voltage-controlled models
Alharbi, A. G., Fouda, M., Khalifa, Z. J., & Chowdhury, M. (2016) · Midwest Symposium on Circuits and Systems · doi:10.1109/mwscas.2016.7869947 · Cited by 14
“Our findings indicate that the proposed emulator circuit exhibits the fingerprints of a memristor as introduced in [3].”
A novel memristor emulator based only on an exponential amplifier and CCII+
Alharbi, A. G., Fouda, M., & Chowdhury, M. (2015) · International Conference on Electronics, Circuits, and Systems · doi:10.1109/icecs.2015.7440327 · Cited by 14
“5 demonstrates that the proposed circuit exhibits the fingerprints of the memristors, which were discussed in details in [14].”
BackgroundA new simple emulator circuit for current controlled memristor
Alharbi, A. G., Khalifa, Z. J., Fouda, M., & Chowdhury, M. (2015) · International Conference on Electronics, Circuits, and Systems · doi:10.1109/icecs.2015.7440305 · Cited by 14
“For a device to be considered as a memristor it must have three significant fingerprints [15].”
BackgroundIs spiking logic the route to memristor-based computers?
Gale, E., Costello, B. D. L., & Adamatzky, A. (2013) · IEEE International Conference on Electronics, Circuits and Systems (ICECS) · doi:10.1109/icecs.2013.6815413 · Cited by 13
Huang, Z., Li, Z., Wang, Q., Tan, W., & Wu, X. (2025) · Chaos Solitons & Fractals · doi:10.1016/j.chaos.2025.116674 · Cited by 11
Zhou, L., Chen, Q., Tan, F., & Wu, C. (2025) · Expert Systems with Applications · doi:10.1016/j.eswa.2025.129272 · Cited by 19
The Art and Science of Constructing a Memristor Model
Williams, R. S., & Pickett, M. D. (2014) · Memristors and Memristive Systems · doi:10.1007/978-1-4614-9068-5_3 · Cited by 13
Yang, J., Li, C.-B., Zhang, Q., Zhang, X., Wu, Z.-H., Zhong, H.-D., Liu, P.-Q., Liu, Z.-H., Tao, C.-Y., Huang, K., et al. (2024) · Chaos, Solitons & Fractals · doi:10.1016/j.chaos.2024.114832 · Cited by 13
A conservative system based on a triangular wave memristor and its application in image encryption
Du, C.-H., Liu, L.-C., Zhang, Z.-P., & Yu, S.-X. (2023) · Nonlinear dynamics · doi:10.1007/s11071-023-08653-x · Cited by 13
“These characteristics are consistent with the three fingerprints of the charge-controlled memristor [21].”
BackgroundResultPhysical evidence of meminductance in a passive, two-terminal circuit element
Dinavahi, A., Yamamoto, A., & Harris, H. R. (2023) · Scientific Reports · doi:10.1038/s41598-022-24914-y · Cited by 13
Broken symmetry and dynamics of a memristive diodes bridge-based Shinriki oscillator
Ramadoss, J., Kengne, J., Telem, A. N. K., & Rajagopal, K. (2021) · Physica A: Statistical Mechanics and its Applications · doi:10.1016/j.physa.2021.126562 · Cited by 13
Multistability and coexisting transient chaos in a simple memcapacitive system
Wang, F.-P., & Wang, F.-Q. (2020) · doi:10.1088/1674-1056/ab7e98 · Cited by 13
Initial State Dependent Nonsmooth Bifurcations in a Fractional-Order Memristive Circuit
Yu, Y., & Wang, Z.-H. (2018) · International Journal of Bifurcation and Chaos in Applied Sciences and Engineering · doi:10.1142/s0218127418500918 · Cited by 13
Window function for fractional-order HP Ti O 2 non-linear memristor model
Shi, M., Yu, Y., & Xu, Q. (2018) · IET Circuits Devices Syst. · doi:10.1049/iet-cds.2017.0414 · Cited by 13
Switching mechanism for TiO 2 memristor and quantitative analysis of exponential model parameters
Wang, X.-P., Chen, M., & Shen, Y. (2015) · Chinese Physics B · doi:10.1088/1674-1056/24/8/088401 · Cited by 13
Coherer is the elusive memristor
Gandhi, G., Aggarwal, V., & Chua, L. (2014) · International Symposium on Circuits and Systems · doi:10.1109/iscas.2014.6865617 · Cited by 13
Self-citationWang, E., Hu, B., & Guan, Z. (2025) · Chaos Solitons & Fractals · doi:10.1016/j.chaos.2025.116437 · Cited by 15
Heterogeneous Memristive Models Design and Its Application in Information Security
Zhong, S.-J. (2019) · Computers Materials & Continua · doi:10.32604/cmc.2019.05853 · Cited by 13
Vaidyanathan, S., Pham, V., & Volos, C. (2017) · Studies in computational intelligence · doi:10.1007/978-3-319-51724-7_5 · Cited by 13
Firing modes of a memristive complex-valued FHN neuron
Nie, H., Liu, J., Wang, D., Zhang, F., & Wang, W. (2025) · Chaos, Solitons & Fractals · doi:10.1016/j.chaos.2025.116372 · Cited by 12
Huang, Z., Li, Z., Wang, Q., Tan, W., & Wu, X. (2025) · Chinese Journal of Physics · doi:10.1016/j.cjph.2025.05.037 · Cited by 13
Diao, Y., Huang, S.-F., Huang, L., Xiong, X.-M., Yang, J., & Cai, S.-T. (2024) · Chaos, Solitons & Fractals · doi:10.1016/j.chaos.2024.115526 · Cited by 12
A Class of Discrete Memristor Chaotic Maps Based on the Internal Perturbation
Yihyis, W. A., He, S., Tang, Z., & Wang, H.-H. (2023) · Symmetry · doi:10.3390/sym15081574 · Cited by 12
“[4] proposed the three fingerprint features that guided the design of generalized memristors.”
BackgroundKhan, N. A., Qureshi, M. A., & Khan, N. A. (2023) · Partial Differential Equations in Applied Mathematics · doi:10.1016/j.padiff.2023.100505 · Cited by 12
Carbazole Derivatized n‐Alkyl Methacrylate Polymeric Memristors as Flexible Synaptic Substitutes
McFarlane, T. M., Bandera, Y. P., Grant, B., Zdyrko, B., Foulger, S., Vilčáková, J., Saha, P., & Pfleger, J. (2020) · Advanced Electronic Materials · doi:10.1002/aelm.202000042 · Cited by 12
Sadecki, J., & Marszalek, W. (2019) · Microelectronics Journal · doi:10.1016/j.mejo.2019.104636 · Cited by 12
Improvement of memristive properties in CuO films with a seed Cu layer
Cheng, T.-D., Zhang, H., Liu, N., Yu, P., Wu, G.-T., & Tang, X.-G. (2019) · Applied Physics Letters · doi:10.1063/1.5079876 · Cited by 12
About Fingerprints of Chua's Memristors
Biolek, D., & Biolek, Z. (2018) · IEEE Circuits and Systems Magazine · doi:10.1109/mcas.2018.2821759 · Cited by 12
“Note that the above situation constitutes in fact a violation of the fingerprints from [19].”
BackgroundInfluentialSynchronization of Chaotic Nonlinear Circuits via a Memristor
Volos, C., Kyprianidis, I., Stouboulos, I., Muñoz-Pacheco, J., & Pham, V. (2015) · Journal of Engineering Science and Technology Review · doi:10.25103/jestr.082.07 · Cited by 12
Jin, H., & Li, Z.-J. (2024) · Chaos, Solitons & Fractals · doi:10.1016/j.chaos.2024.115219 · Cited by 11
Two MOS Transistor Based Floating Memristor Circuit and its Application as Oscillator
Kumar, N., Kumar, M., Kumar, M., & Pandey, N. (2023) · AEU - International Journal of Electronics and Communications · doi:10.1016/j.aeue.2023.154916 · Cited by 11
Ren, L., Mou, J., Jahanshahi, H., Al-barakati, A., & Cao, Y.-H. (2023) · The European Physical Journal Plus · doi:10.1140/epjp/s13360-023-04379-2 · Cited by 11
Lin, Y., Liu, W., & Hang, C. (2023) · Chaos, Solitons & Fractals · doi:10.1016/j.chaos.2022.113006 · Cited by 11
Yan, W., Dong, W., Wang, P., Wang, Y., Xing, Y., & Ding, Q. (2022) · Entropy · doi:10.3390/e24070864 · Cited by 11
“In 2013, Adhikari and Biolek[4,5] proposed three fingerprints of memristor, that is, adding bipolar periodic signals, the device is a tight hysteresis loop passing through the origin on the plane, and its response is periodic.”
BackgroundOffset reduction on memristor emulator circuits
Sánchez-López, C., Carrasco-Aguilar, M. A., & Morales-Lopez, F. (2015) · International Conference on Electronics, Circuits, and Systems · doi:10.1109/icecs.2015.7440307 · Cited by 11
Sah, M. P., Adhikari, S., Kim, H., & Chua, L. (2014) · International Workshop on Cellular Neural Networks and Their Applications · doi:10.1109/cnna.2014.6888655 · Cited by 11
“Many different devices have since been identified as memristors and different applications have been proposed; memristor-based ultra-dense non-volatile memory and memristor-based artificial synapse being some of them.”
BackgroundSelf-citationThe First Man-Made Memristor: Circa 1801 [Scanning Our Past]
Lin, D., Chua, L., & Hui, S. (2015) · Proceedings of the IEEE · doi:10.1109/jproc.2014.2374754 · Cited by 11
Self-citationReconfigurable neuromorphic computing by a microdroplet
Ma, Y., Niu, Y., Pei, R.-C., Wang, W., Wei, B., & Xie, Y.-B. (2024) · Cell Reports Physical Science · doi:10.1016/j.xcrp.2024.102202 · Cited by 10
Tunable floating and grounded memristor emulator model
Prasad, S. S. S., Dutta, S., Choubey, C. K., Dubey, S. K., Priyadarshini, B., & Ranjan, R. (2023) · International Journal of Electronics · doi:10.1080/00207217.2023.2267218 · Cited by 10
“The memristor can be ‘charge controlled’ or ‘flux controlled’, depending on whether it remembers the amount of charge flowing through it or the time integral of its excitation voltage, respectively Adhikari et al. (2013).”
Mutlu, R., & Kumru, T. D. (2023) · Radioengineering · doi:10.13164/re.2023.0312 · Cited by 10
“A memristor model must have the three fingerprints of a memristor as explained in [53].”
MethodA unified modeling approach for characterization of fractional‐order memory elements
Oresanya, B. O., Si, G.-Q., Xu, X., Gong, J.-H., & Guo, Z. (2023) · International journal of circuit theory and applications · doi:10.1002/cta.3652 · Cited by 10
“And as deduced from Equation (8), the kλ1 does not contribute to Es at all; hence, Ed Es and ΔE j j<1 for the memelements especially at low ω; this would even be more profound if the memelement has higher orders of nonlinearities (r>1 in Equation (4)).”
BackgroundMethodInfluentialCao, H., Wang, F.-Q., & Liu, J.-J. (2022) · IEEE transactions on power electronics · doi:10.1109/tpel.2022.3194697 · Cited by 10
“As proven in [46], any two-terminal circuit can be regarded as a memristor emulator, if it can display a pinched hysteresis loop passing through the origin in the voltage versus current plane when is powered by a periodic ac voltage source or ac current source.”
BackgroundMethodModeling Memristor Radiation Interaction Events and the Effect on Neuromorphic Learning Circuits
Dahl, S. G., Ivans, R. C., & Cantley, K. D. (2018) · Proceedings of the International Conference on Neuromorphic Systems · doi:10.1145/3229884.3229885 · Cited by 10
“As per well-read papers on memristive devices by Chua et al. [12,13] and by Adhikari et al. [2] three characteristic fingerprints of memristor are: firstly, I-V curve should show pinched hysteresis loop, secondly, I-V curve hysteresis lobe area should decrease with increasing frequency and finally,…”
BackgroundEmulator Circuits and Resistive Switching Parameters of Memristor
Yesil, A., Gül, F., & Babacan, Y. (2018) · Memristor and Memristive Neural Networks · doi:10.5772/intechopen.71903 · Cited by 10
“The pinched hysteresis loops serve as a fingerprint in the characterization of memristors [11] as shown in Figure 7.”
BackgroundQiao, X., Liu, Z., Sun, J., Yan, X., Jia, X., Jiao, J., Liu, X., Ni, Y., Ding, X., Sun, J., et al. (2026) · Advanced Materials · doi:10.1002/adma.202517373 · Cited by 10
Two-memristor-based maps with infinitely many hyperchaotic attractors
Hussan, I., Zhao, M., & Zhang, X. (2025) · Chaos, Solitons & Fractals · doi:10.1016/j.chaos.2024.115904 · Cited by 9
High Frequency Response of Volatile Memristors
Messaris, I., Ascoli, A., Demirkol, A. S., Ntinas, V., Prousalis, D., & Tetzlaff, R. (2024) · Advanced Electronic Materials · doi:10.1002/aelm.202400172 · Cited by 9
“This behavior is a typical memristive fingerprint, as reported in [37].”
Yang, Z., Zhao, B., & Liu, D.-R. (2023) · IEEE Transactions on Neural Networks and Learning Systems · doi:10.1109/tnnls.2023.3270345 · Cited by 9
“From that time on, an increasing number of scholars have devoted their passion to investigating the characteristics of memristors [3], [4], [5] and memristor-based neural networks (MNNs) [6], [7].”
BackgroundRC-MHM: reservoir computing with a 2D memristive hyperchaotic map
Ren, J., Ji’e, M., Xu, S., Yan, D., Duan, S., & Wang, L. (2023) · The European Physical Journal Special Topics · doi:10.1140/epjs/s11734-023-00773-0 · Cited by 11
“Besides, the change in the initial value of the magnetic flux also more strongly illustrates the correctness of the new discrete memristor model [23].”
BackgroundBioderived materials for stimuli-responsive, adaptive, and neuromorphic systems: A perspective
Makhoul-Mansour, M. M., Maraj, J. J., & Sarles, S. A. (2022) · Journal of Composite Materials · doi:10.1177/00219983221135055 · Cited by 15
Köymen, I., Gokturk, P. A., Kocabas, C., & Süzer, Ş. (2019) · Faraday discussions · doi:10.1039/c8fd00129d · Cited by 9
Yang, N.-N., Xu, C., Wu, C.-J., Jia, R., & Liu, C. (2018) · Complex · doi:10.1155/2018/9467435 · Cited by 9
“In order to verify whether the proposed fractional-order generalized memristor satisfied the three fingerprints of a memristor [39], numerical simulations are carried out using MATLAB software.”
MethodAn improved memristor-CMOS XOR logic gate and a novel full adder
Wang, X., Yang, R., Chen, Q., & Zeng, Z. (2017) · International Conference on Advanced Computational Intelligence (ICACI) · doi:10.1109/icaci.2017.7974477 · Cited by 13
“One of the memristor characteristics is that its I-V plot has a pinched-hysteresis loop [4], which means the resistance of memristor will change when applying voltage.”
BackgroundA Novel Modeling Methodology for Memristive Systems Using Homotopy Perturbation Methods
Hernández-Mejía, C., Sarmiento-Reyes, A., & Vázquez-Leal, H. (2016) · Circuits, systems, and signal processing · doi:10.1007/s00034-016-0346-z · Cited by 9
“With the purpose of identifying elements or systems that behave like memristors or memristive systems, the concept of fingerprints has been introduced [2,5,6,19].”
BackgroundSeries and parallel circuit models containing memristors and inverse memristors
Fouda, M., Radwan, A. G., & Elwakil, A. (2015) · International Conference on Electronics, Circuits, and Systems · doi:10.1109/icecs.2015.7440306 · Cited by 9
“Under sinusoidally exciting i(t), the charge q(t) is inversely proportional to the frequency ω and hence the memristance decays with increasing frequency [5].”
BackgroundAdaptive Control and Synchronization of a Memristor-Based Shinriki’s System
Volos, C., Vaidyanathan, S., Pham, V., Nistazakis, H., Stouboulos, I., Kyprianidis, I., & Tombras, G. (2017) · Studies in computational intelligence · doi:10.1007/978-3-319-51724-7_10 · Cited by 9
Muthuswamy, B., Jevtić, J., Iu, H., Subramaniam, C. K., Ganesan, K., Sankaranarayanan, V., Sethupathi, K., Kim, H., Shah, M., & Chua, L. (2014) · International Symposium on Circuits and Systems · doi:10.1109/iscas.2014.6865179 · Cited by 9
Self-citationLiu, X., Hu, D., Liu, M., & Sun, H. (2025) · Chaos · doi:10.1063/5.0296052 · Cited by 8
Design of a Current-Mode OTA-Based Memristor Emulator for Neuromorphic Medical Application
Neifar, A., Barraj, I., Mestiri, H., & Masmoudi, M. (2025) · Micromachines · doi:10.3390/mi16080848 · Cited by 8
“Research indicates that optimal memristor operation depends on these control paradigms [26].”
Wei, Y., Wang, X., Zhao, T.-K., & Du, B.-X. (2025) · AEU - International Journal of Electronics and Communications · doi:10.1016/j.aeue.2025.155820 · Cited by 8
Almatroud, A., Grassi, G., Khennaoui, A.-A., Abbes, A., Ouannas, A., Alshammari, S., & Albosaily, S. (2024) · Alexandria Engineering Journal · doi:10.1016/j.aej.2024.02.061 · Cited by 8
Fu, S., Wang, X., Gu, H., Cao, X., & Yao, Z. (2023) · Frontiers of Physics · doi:10.3389/fphy.2023.1252568 · Cited by 8
Fully fixed-point integrated digital circuit design of discrete memristive systems
Zhao, Y., Ding, J.-F., He, S.-B., Wang, H.-H., & Sun, K. (2023) · AEU - International Journal of Electronics and Communications · doi:10.1016/j.aeue.2022.154522 · Cited by 8
Flexibly Photo-Regulated Brain-Inspired Functions in Flexible Neuromorphic Transistors
Wang, L., Zhang, T., Shen, J., Huang, J., Li, W., Shi, W. Y., Huang, W., & Yi, M. (2023) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.2c22754 · Cited by 10
A π-Type Memristor Synapse and Neuron With Structural Plasticity
Su, B., Cai, J., Wang, Z., Chu, J., & Zhang, Y.-Z. (2022) · Frontiers of Physics · doi:10.3389/fphy.2021.798971 · Cited by 8
“Since the hysteresis loop of the memristor will shrink into a singlevalued function when the external excitation frequency becomes larger [38], in order to maintain the state of the FIGURE9 | Influence of p on linearity.”
BackgroundExploiting multiple percolation in two-terminal memristor to achieve a multitude of resistive states
Foulger, S., Bandera, Y. P., Grant, B., Vilčáková, J., & Saha, P. (2021) · Journal of Materials Chemistry C · doi:10.1039/d1tc00987g · Cited by 8
Ladder Scaling Fracmemristor: A Second Emerging Circuit Structure of Fractional-Order Memristor
Pu, Y.-F., Yu, B., & Yuan, X. (2021) · IEEE design & test · doi:10.1109/mdat.2020.3013826 · Cited by 8
“The slope of this function called memristance r ( q ) is similar to variable resistance [1]–[3], given as Ladder Scaling Fracmemristor: A Second Emerging Circuit Structure of Fractional-Order Memristor”
BackgroundThe First Experimental Evidence of Chaos from a Nonlinear Circuit with a Real Memristor
VOLOS, C. K., Nistazakis, H. E., Pham, V., & Stouboulos, I. N. (2020) · International Conference on Modern Circuits and Systems Technologies · doi:10.1109/mocast49295.2020.9200269 · Cited by 10
“As it is experimentally verified the KNOWM device presents the three characteristic fingerprints for identifying a device as a memristor [41].”
MethodRiddled Attraction Basin and Multistability in Three-Element-Based Memristive Circuit
Xu, Q., Tan, X., Zhang, Y., Bao, H., Hu, Y., Bao, B., & Chen, M. (2020) · Complexity · doi:10.1155/2020/4624792 · Cited by 9
Experimental verification of volt-ampere characteristic curve for a memristor-based chaotic circuit
Xiong, L., Zhang, X., & Chen, Y. (2019) · Circuit world · doi:10.1108/cw-04-2019-0035 · Cited by 8
Memristor-based Systems: Nonlinearity, Dynamics and Applications
Pham, V., Volos, C., & Fortuna, L. (2019) · The European Physical Journal Special Topics · doi:10.1140/epjst/e2019-900152-7 · Cited by 8
Pinched Hysteresis Loop Characteristics of a Fractional-Order HP TiO2 memristor
Shi, M., & Hu, S.-L. (2017) · LSMS/ICSEE · doi:10.1007/978-981-10-6373-2_70 · Cited by 8
A Conservative Hyperchaotic Hyperjerk System Based on Memristive Device
Vaidyanathan, S. (2017) · Studies in computational intelligence · doi:10.1007/978-3-319-51724-7_16 · Cited by 8
Antimonotonicity, chaos and multiple attractors in a novel autonomous memristor-based jerk circuit
Kengne, J., Negou, A. N., & Tchiotsop, D. (2017) · Nonlinear Dynamics · doi:10.1007/s11071-017-3397-1 · Cited by 167
“Following the works of Bao and colleagues [14,16], the generalized memristor exhibits the three characteristic fingerprints for identifying a memristor [3].”
BackgroundInfluentialControlling neural activity by shunting channel current in a memristive FitzHugh-Nagumo circuit.
Wang, B.-C., Zhao, J.-R., Lei, Z., & Ma, J. (2026) · Chaos · doi:10.1063/5.0321416 · Cited by 7
El-Desoky, M., Harby, A. E., Hannora, A., & Ali, A. M. (2024) · Applied Physics A · doi:10.1007/s00339-024-07901-0 · Cited by 7
“The pinched hysteresis loop that distinguishes the memristor/memristive device from other circuit components is one of its distinctive characteristics [75].”
Hybrid synaptic structure for spiking neural network realization
Razmkhah, S., Karamuftuoglu, M. A., & Bozbey, A. (2023) · Superconductors Science and Technology · doi:10.1088/1361-6668/ad44e3 · Cited by 7
“In contrast, research groups and companies, including IBM and Intel, explore innovative devices like memristors to replicate the learning and path formation observed in biological brain synapses [8, 9].”
Lai, Q., & Guo, S. (2023) · Chaos · doi:10.1063/5.0153885 · Cited by 7
Emergence of chaotic hysteresis in a second-order non-autonomous chaotic circuit
Sivaganesh, G., Srinivasan, K., Fozin, T., & Pradeep, R. G. (2023) · Chaos, Solitons & Fractals · doi:10.1016/j.chaos.2023.113884 · Cited by 7
Metadata
- Authors
- Adhikari, S. P., Sah, M. P., Kim, H., & Chua, L. O.
- Affiliations
- Jeonbuk National University (KR)
- University of California, Berkeley (US)
- Venue
- IEEE Transactions on Circuits and Systems I: Regular Papers
- Published
- 2013-11
- Volume
- 60
- Issue
- 11
- Pages
- 3008-3021
- ISSN
- 1549-8328 (ISSN-L)
- 1558-0806
- OpenAlex
- W2084914578
- Cited by
- 659
- References
- 0
- Citations by year
- 2026: 34 · 2025: 56 · 2024: 59 · 2023: 70 · 2022: 76 · 2021: 55 · 2020: 60 · 2019: 49 · 2018: 55 · 2017: 36 · 2016: 28 · 2015: 46 · 2014: 28 · 2013: 6
- FWCI
- 21.60
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Transactions on Circuits and Systems I Regular Papers (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Physics and Astronomy › Statistical and Nonlinear Physics › Chaos control and synchronization
- Keywords
- memristors, pinched hysteresis loop, hysteresis loop area, frequency dependence, current-voltage characteristics
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
