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Thermomechanical Reliability of Low-Temperature Sintered Silver Die Attached SiC Power Device Assembly
Abstract
A thermomechanical reliability study was conducted on a low-temperature sintered silver die attached SiC power device assembly. The silver die attachment was formed by sintering nanoscale silver paste in air at 300 degC to form a strong bond between silver- or gold-coated direct-bond-copper substrates and silver-metallized SiC Schottky diodes. Using the 50% drop in the die-shear strength as the failure criterion, an accelerated thermal cycling experiment between 50 degC and 250 degC showed that the silver die attachment can survive more than 4000 cycles, indicating its high thermomechanical reliability at the interested temperature range. Established mainly by scanning electron microscopy/energy-dispersive spectroscopy, the drop of the die-shear strength during the thermal cycling was attributed to the pile-up of creeping dislocations to form microcavities at the grain boundaries of the sintered silver
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Cited by
Die Attach Materials for High Temperature Applications: A Review
Manikam, V. R., & Cheong, K. Y. (2011) · IEEE Transactions on Components, Packaging and Manufacturing Technology · doi:10.1109/tcpmt.2010.2100432 · Cited by 478
Joining of Silver Nanomaterials at Low Temperatures: Processes, Properties, and Applications
Peng, P., Hu, A., Gerlich, A. P., Zou, G., Liu, L., & Zhou, Y. N. (2015) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.5b02134 · Cited by 364
Are Sintered Silver Joints Ready for Use as Interconnect Material in Microelectronic Packaging?
Siow, K. S. (2014) · Journal of Electronic Materials · doi:10.1007/s11664-013-2967-3 · Cited by 317
High-Temperature Operation of SiC Power Devices by Low-Temperature Sintered Silver Die-Attachment
Bai, J. G., Yin, J., Zhang, Z., Lu, G.-Q., & van Wyk, J. D. (2007) · IEEE Transactions on Advanced Packaging · doi:10.1109/tadvp.2007.898628 · Cited by 177
Self-citationTransient Thermal Performance of IGBT Power Modules Attached by Low-Temperature Sintered Nanosilver
Chen, G., Han, D., Mei, Y.-H., Cao, X., Wang, T., Chen, X., & Lu, G.-Q. (2012) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2011.2173573 · Cited by 71
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Metadata
- Authors
- Bai, J. G., & Lu, G.-Q.
- Venue
- IEEE Transactions on Device and Materials Reliability
- Published
- 2006-09
- Volume
- 6
- Issue
- 3
- Pages
- 436-441
- ISSN
- 1530-4388 (ISSN-L)
- OpenAlex
- W2157615424
- Cited by
- 214
- References
- 0
- FWCI
- 4.72
- Type
- journal article
- Language
- en
- Open access
- closed
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- Bai, J. G., & Lu, G.-Q. (2006). Thermomechanical Reliability of Low-Temperature Sintered Silver Die Attached SiC Power Device Assembly. IEEE Transactions on Device and Materials Reliability. https://doi.org/10.1109/tdmr.2006.882196
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