The DOI matches its Crossref record; 16 of the 16 references it cites were found in a registry or an index.
Design and Performance Evaluation of Overcurrent Protection Schemes for Silicon Carbide (SiC) Power MOSFETs
Abstract
Overcurrent protection of silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) remains a challenge due to lack of practical knowledge. This paper presents three overcurrent protection methods to improve the reliability and overall cost of SiC MOSFET-based converters. First, a solid-state circuit breaker (SSCB) composed primarily by a Si IGBT and a commercial gate driver IC is connected in series with the dc bus to detect and clear overcurrent faults. Second, the desaturation technique using a sensing diode to detect the drain-source voltage under overcurrent faults is implemented as well. Third, a novel active overcurrent protection scheme through dynamic evaluation of fault current level is proposed. The design considerations and potential issues of the protection methods are described and analyzed in detail. A phase-leg configuration-based step-down converter is built to evaluate the performance of the protection schemes under various conditions, considering variation of fault type, decoupling capacitance, protection circuit parameters, etc. Finally, a comparison is made in terms of fault response time, temperature-dependent characteristics, and applications to help designers select a proper protection method.
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Biela, J., Schweizer, M., Waffler, S., & Kolar, J. W. (2011) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2010.2072896 · Cited by 892
Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated
Rabkowski, J., Peftitsis, D., & Nee, H. (2012) · IEEE Industrial Electronics Magazine · doi:10.1109/mie.2012.2193291 · Cited by 422
Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements
Lelis, A. J., Habersat, D., Green, R., Ogunniyi, A., Gurfinkel, M., Suehle, J., & Goldsman, N. (2008) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2008.926672 · Cited by 326
A discussion on IGBT short-circuit behavior and fault protection schemes
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Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments
Yu, L. C., Dunne, G. T., Matocha, K. S., Cheung, K. P., Suehle, J. S., & Sheng, K. (2010) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2010.2077295 · Cited by 227
Improving SiC JFET Switching Behavior Under Influence of Circuit Parasitics
Josifovic, I., Popovic-Gerber, J., & Ferreira, J. A. (2012) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2012.2185951 · Cited by 220
Zhang, H., & Tolbert, L. M. (2011) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2010.2048292 · Cited by 200
Self-citationInvestigation of Conducted EMI in SiC JFET Inverters Using Separated Heat Sinks
Gong, X., & Ferreira, J. A. (2013) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2013.2240636 · Cited by 133
Reliability of SiC MOS devices
Singh, R., & Hefner, A. R. (2004) · Solid-State Electronics · doi:10.1016/j.sse.2004.05.005 · Cited by 118
Short-circuit capability of 1200V SiC MOSFET and JFET for fault protection
Huang, X., Wang, G., Li, Y., Huang, A. Q., & Baliga, B. J. (2013) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec.2013.6520207 · Cited by 113
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Automotive Traction Inverters: Current Status and Future Trends
Reimers, J., Dorn-Gomba, L., Mak, C., & Emadi, A. (2019) · IEEE Transactions on Vehicular Technology · doi:10.1109/tvt.2019.2897899 · Cited by 375
Zhao, B., Song, Q., & Liu, W. (2015) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2014.2350459 · Cited by 143
Advances in Power Conversion and Drives for Shipboard Systems
Wang, F., Zhang, Z., Ericsen, T., Raju, R., Burgos, R., & Boroyevich, D. (2015) · Proceedings of the IEEE · doi:10.1109/jproc.2015.2495331 · Cited by 135
Self-citationZeng, Z., Zhang, X., & Li, X. (2019) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2900497 · Cited by 97
Metadata
- Authors
- Wang, Z., Shi, X., Xue, Y., Tolbert, L. M., Wang, F., & Blalock, B. J.
- Venue
- IEEE Transactions on Industrial Electronics
- Published
- 2014-10
- Volume
- 61
- Issue
- 10
- Pages
- 5570-5581
- ISSN
- 0278-0046 (ISSN-L)
- 1557-9948
- OpenAlex
- W1967738299
- Cited by
- 269
- References
- 16
- FWCI
- 9.37
- Type
- journal article
- Language
- en
- Open access
- closed
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- Wang, Z., Shi, X., Xue, Y., Tolbert, L. M., Wang, F., & Blalock, B. J. (2014). Design and Performance Evaluation of Overcurrent Protection Schemes for Silicon Carbide (SiC) Power MOSFETs. IEEE Transactions on Industrial Electronics. https://doi.org/10.1109/tie.2013.2297304
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