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Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka- and Q-Band LNAs
Abstract
We investigate the cryogenic stability of two-finger 100-nm gate-length InP HEMTs aimed for Ka- and Q-band ultra-low noise amplifiers (LNAs). InP HEMTs with unit gate widths ranging between 30 and 50 $\mu \text{m}$ exhibit unstable cryogenic behavior with jumps in drain current and discontinuous peaks in transconductance. We also find that shorter gate length enhances the cryogenic instability. We demonstrate that the instability of two-finger transistors can be suppressed by either adding a source air bridge, connecting the back end of gates, or increasing the gate resistance. A three-stage 24-40 GHz and a four-stage 28-52-GHz monolithic microwave-integrated circuit LNA using the stabilized InP HEMTs are presented. The Ka-band amplifier achieves a minimum noise temperature of 7 K at 25.6 GHz with an average noise temperature of 10.6 K at an ambient temperature of 5.5 K. The amplifier gain is 29 dB ± 0.6 dB. The Q-band amplifier exhibits minimum noise temperature of 6.7 K at 32.8 GHz with average noise temperature of 10 K at ambient temperature of 5.5 K. The amplifier gain is 34 dB ± 0.8 dB. To our knowledge, the Ka- and Q-band amplifiers demonstrate the lowest noise temperature reported so far for InP cryogenic LNAs.
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III-V direct band gap semiconductor devices like Ga-As based pHEMTs are one of the most preferred choices for developing cryogenic amplifiers.
“whereas III-V direct band gap semiconductor devices like Ga-As based pHEMTs are one of the most preferred choice for developing cryogenic amplifiers [12-28].”
From Development and Characterization of a Cryogenic Tuned Amplifier for Penning Trap Applications (2025) · cites this paper as [14]
Citations
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- Reck, Cryogenic performance of HEMT amplifiers at 340 GHz and 670 GHz, 1
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Metadata
- Authors
- Cha, E., Moschetti, G., Wadefalk, N., Nilsson, P.-A., Bevilacqua, S., Pourkabirian, A., Starski, P., & Grahn, J.
- Affiliations
- Chalmers University of Technology (SE)
- RISE Research Institutes of Sweden (SE)
- Venue
- IEEE Transactions on Microwave Theory and Techniques
- Published
- 2017-12
- Volume
- 65
- Issue
- 12
- Pages
- 5171-5180
- ISSN
- 0018-9480 (ISSN-L)
- 1557-9670
- OpenAlex
- W2767385708
- Cited by
- 33
- References
- 22
- Citations by year
- 2026: 3 · 2025: 4 · 2024: 2 · 2023: 3 · 2021: 8 · 2020: 6 · 2019: 5 · 2018: 2
- FWCI
- 1.48
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- IEEE Transactions on Microwave Theory and Techniques (publishedVersion)
- Chalmers Publication Library (Chalmers University of Technology) (submittedVersion)
- Chalmers Research (Chalmers University of Technology) (submittedVersion)
- Funders
- GigaHertz Centre in a joint project financed by the Swedish Governmental Agency of Innovation System (VINNOVA)
- Chalmers University of Technology
- Low Noise Factory
- Omnisys Instruments
- Wasa Millimeter Wave
- RISE Research Institute of Sweden
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Radio Frequency Integrated Circuit Design
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Superconducting and THz Device Technology
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Microwave Engineering and Waveguides
- Keywords
- InP HEMT, cryogenic stability, ultra-low-noise amplifier, Ka-band, Q-band, noise temperature, gate length, gate resistance, monolithic microwave integrated circuits, cryogenic operation
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