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Cited by 12Advancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesSilicon Carbide Semiconductor Technologies

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Operation of silicon-germanium heterojunction bipolar transistors with different structures at deep cryogenic temperature

Yu, Guofang, Liang, Renrong, Wang, Xiawa, Xu, Jun, Ren, Tian-Ling·2019·Science Bulletin
DOI 10.1016/j.scib.2019.03.005
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Abstract

In this work, the device performances of discrete and integrated SiGe heterojunction bipolar transistors (HBTs) with different device structures from 300 to 4.8 K were investigated. The turn-on voltages of base-emitter and base-collector junctions increased non-linearly with temperature cooled to 4.8 K. Energy bandgap engineering was taken into account for the analytical model of the turn-on voltage versus temperature. Incomplete ionization occurred in the base-collector junction because of the low doping concentration. The trap-assisted tunneling current in the forward base current was clearly observed below 20 K. The ideality factor and saturation current were shown to be temperature dependence. The ideality factor was much larger than 2 below 40 K, indicating that the current is not only contributed by drift, diffusion and recombination, but also by tunneling. The peak current gain of the discrete SiGe HBTs achieved the maximum value of 3,388 at 80 K, while that of the integrated was 546 at 140 K. The transconductance in logarithm was linearly dependent on reciprocal temperature above 50 K, but flattened below 50 K. Early effect was evidently observed below 77 K in the fixed base current output characteristics of the discrete SiGe HBTs, and it was not obvious for the integrated SiGe HBTs.

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References 65 · Cited by 12

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Metadata

Authors
Yu, G., Liang, R., Wang, X., Xu, J., & Ren, T.-L.
Affiliations
Beijing National Research Center for Information Science and Technology (CN)
Corresponding author
Liang, Renrong
ORCID
Venue
Science Bulletin
Publisher
Elsevier BV
Published
2019-04
Volume
64
Issue
7
Pages
469-477
ISSN
2095-9273 (ISSN-L)
DOI
10.1016/j.scib.2019.03.005
OpenAlex
W2922284174
Cited by
12
References
65
Citations by year
2026: 1 · 2025: 5 · 2024: 3 · 2023: 1 · 2022: 1 · 2020: 1
FWCI
0.18
Type
journal article
Language
en
Open access
closed
Licence
Locations
  • 中国科学通报：英文版 (publishedVersion)
  • PubMed (publishedVersion)
Funders
  • National Key Research and Development Program of China (2016YFA0200300, 2016YFA0200400, 2015CB352101)
  • Tsinghua University (2014Z01006)
  • Beijing Innovation Center for Future Chip
  • Natural Science Foundation of Beijing Municipality
  • Special Fund for Agro-scientific Research in the Public Interest (201303107)
  • Science, Technology and Innovation Commission of Shenzhen Municipality (JCYJ20150831192224146)
  • National Natural Science Foundation of China (61574083, 61434001)
  • National Major Science and Technology Projects of China (2016ZX02301001)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
Keywords
SiGe HBT, turn-on voltage, incomplete ionization, trap-assisted tunneling, ideality factor, saturation current, transconductance, early effects, base-collector junction

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