The DOI matches its Crossref record; 33 of the 38 references it cites were found in a registry or an index.
An MMIC Low-Noise Amplifier Design Technique
Abstract
In this paper we discuss the design of low-noise amplifiers (LNAs) for both cryogenic and room-temperature operation in general and take the stability and linearity of the amplifiers into special consideration. Oscillations that can occur within a multi-finger transistor are studied and verified with simulations and measurements. To overcome the stability problem related to the multi-finger transistor design approach a parallel two-finger unit transistor monolithic microwave integrated circuit LNA design technique, which enables the design of wideband and high-linearity LNAs with very stable, predictable, and repeatable operation, is proposed. The feasibility of the proposed design technique is proved by demonstrating a three-stage LNA packaged in a WR10 waveguide housing and fabricated using a 35-nm InP HEMT technology that achieves more than a 20-dB gain from 75 to 116 GHz and 26–33-K noise temperature from 85 to 116 GHz when cryogenically cooled to 27 K.
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III-V direct band gap semiconductor devices like Ga-As based pHEMTs are one of the most preferred choices for developing cryogenic amplifiers.
“whereas III-V direct band gap semiconductor devices like Ga-As based pHEMTs are one of the most preferred choice for developing cryogenic amplifiers [12-28].”
From Development and Characterization of a Cryogenic Tuned Amplifier for Penning Trap Applications (2025) · cites this paper as [12]
Citations
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Self-citationA WR4 Amplifier Module Chain With an 87 K Noise Temperature at 228 GHz
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Self-citationCryogenic performance of HEMT amplifiers at 340GHz and 670GHz
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Self-citationAn MMIC low-noise amplifier design technique
Varonen, M., Reeves, R. A., Kangaslahti, P., Samoska, L. A., Cleary, K., Akgiray, A. H., Gawande, R., Fung, A., Gaier, T., Weinreb, S., et al. (2015) · IEEE MTT-S International Microwave Symposium digest · doi:10.1109/mwsym.2015.7166997 · Cited by 10
Self-citationCryogenic probing of mm-wave MMIC LNAs for large focal-plane arrays in radio-astronomy
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Self-citationLow Frequency Dispersion in InP HEMTs
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- reck, 2014, Cryogenic performance of HEMT amplifiers at 340 GHz and 670 GHz, IEEE MTT-S Int Microw Symp Dig, 1
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State‐of‐the‐art Cryogenic Low‐noise Amplifier
Professor of Radio Frequency and Microwave Techniques, P. O. M. S., Poddar, C. S. A. K., & Rudolph, C. O. R. F. A. M. T. M. (2026) · doi:10.1002/9781394162031.app04
Metadata
- Authors
- Varonen, M., Reeves, R., Kangaslahti, P., Samoska, L., Kooi, J. W., Cleary, K., Gawande, R. S., Akgiray, A., Fung, A., Gaier, T., Weinreb, S., Readhead, A. C. S., Lawrence, C., Sarkozy, S., & Lai, R.
- Affiliations
- California Institute of Technology (US)
- Northrop Grumman (United States) (US)
- ORCID
- Venue
- IEEE Transactions on Microwave Theory and Techniques
- Published
- 2016
- Pages
- 1-10
- ISSN
- 0018-9480 (ISSN-L)
- 1557-9670
- OpenAlex
- W2288940781
- Cited by
- 44
- References
- 38
- Citations by year
- 2026: 2 · 2025: 3 · 2024: 8 · 2023: 2 · 2022: 1 · 2021: 5 · 2020: 1 · 2019: 5 · 2018: 3 · 2017: 11 · 2016: 3
- FWCI
- 3.38
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- IEEE Transactions on Microwave Theory and Techniques (publishedVersion)
- CaltechAUTHORS (California Institute of Technology) (submittedVersion)
- eResearch@Ozyegin (submittedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Radio Frequency Integrated Circuit Design
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Microwave Engineering and Waveguides
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Analog and Mixed-Signal Circuit Design
- Keywords
- low noise amplifier, MMIC, multi-finger transistors, oscillations, amplifier stability, linearity, wideband amplifier, InP HEMT, cryogenic operation, noise temperature, millimeter-wave amplifier
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