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Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs
Abstract
An essential ruggedness of power devices is the capability of safely withstanding the surge energy. The surge ruggedness of the GaN high-electron-mobility transistor (HEMT), a power transistor with no or minimal avalanche capability, has not been fully understood. This article unveils the comprehensive physics associated with the surge-energy withstand process and the failure mechanisms of p-gate GaN HEMTs. Two commercial p-gate GaN HEMTs with Ohmic- and Schottky-type gate contacts are studied. Two circuits are developed to study the device surge ruggedness: an unclamped inductive switching circuit is first used to identify the withstand dynamics and failure mechanisms, and a clamped inductive switching circuit with a controllable parasitic inductance is then designed to mimic the surge energy in converter-like switching events. The p-gate GaN HEMT is found to withstand the surge energy through a resonant energy transfer between the device capacitance and the load/parasitic inductance rather than a resistive energy dissipation as occurred in the avalanche. If the device resonant voltage goes below zero, the device reversely turns on and the inductor is discharged. The device failure occurs at the transient of peak resonant voltage and is limited by the device overvoltage capability rather than the surge energy, dV/dt, or overvoltage duration. Almost no energy is dissipated in the resonant withstand process and the device failure is dominated by an electric field rather than a thermal runaway. These results provide critical understandings on the ruggedness of GaN HEMTs and important references for their qualifications and applications.
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“For Si and SiC transistors, instead, devices surge energy is generally related to avalanche energy [47].”
From Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives (2024) · cites this paper as [47]
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Metadata
- Authors
- Zhang, R., Kozak, J. P., Xiao, M., Liu, J., & Zhang, Y.
- Affiliations
- Virginia Tech (US)
- Venue
- IEEE Transactions on Power Electronics
- Published
- 2020-12
- Volume
- 35
- Issue
- 12
- Pages
- 13409-13419
- ISSN
- 0885-8993 (ISSN-L)
- 1941-0107
- OpenAlex
- W3024406559
- Cited by
- 148
- References
- 22
- Citations by year
- 2026: 16 · 2025: 28 · 2024: 22 · 2023: 31 · 2022: 16 · 2021: 29 · 2020: 6
- FWCI
- 20.12
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Transactions on Power Electronics (publishedVersion)
- The HKU Scholars Hub (University of Hong Kong) (submittedVersion)
- OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (submittedVersion)
- Funders
- Power America Institute, Department of Energy
- Virginia Polytechnic Institute and State University
- Topics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Electromagnetic Compatibility and Noise Suppression
- Keywords
- resonance energy transfer, parasitic inductance, device failure mechanisms
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