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Online Thermal Resistance and Reliability Characteristic Monitoring of Power Modules With Ag Sinter Joining and Pb, Pb-Free Solders During Power Cycling Test by SiC TEG Chip
Abstract
Despite the rapid progression of silicon carbide (SiC) power devices, the thermal characteristic evaluation during power cycling at high temperature (>200 °C) is an issue. In this article, a fast and miniaturized evaluation system with online thermal characteristic measurement function was introduced by an n-doped 4H SiC thermal engineering group (TEG) chip. Online thermal resistance measurement of a power module structure by Ag sinter joining with micron/submicron Ag particles paste in low temperature, low pressure, and cooling system by a thermal interface material bonding was performed. High-temperature reliability was systemically investigated by power cycling tests by switching on/off the power source which is connected to the SiC-TEG chip by Au wires. The total thermal resistance of the power module from the SiC-TEG chip to the cooling system increased from 0.5 to 0.53 K/W with the enhanced power source, and remained almost same after 20 000 power cycling at a swing temperature ΔTj of 150 °C. Furthermore, the SiC-TEG power module structure with the die attached with Pb and Pb-free solders, alongwith the same power source as sinter Ag paste was also measured. The Ag sinter joint possesses the lowest thermal resistance and highest high temperature reliability during power cycling compared with Pb and Pb-free die-attach materials.
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Traditional Sn-based solders are constrained by relatively low melting points and intermetallic compound formation, motivating high-reliability alternatives.
“Traditional Sn-based solders are constrained by relatively low melting points and intermetallic compound (IMC) formation [30], motivating highreliability alternatives [31].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [31]
Silver-sintered joints provide excellent electrical and thermal conductivity and high-temperature stability but face electromigration and cost challenges.
“Silver-sintered joints provide excellent electrical/thermal conductivity and high-temperature stability but face electromigration (EM) and cost challenges [2,30-35].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [31]
Copper-sintered joints offer comparable performance with improved electromigration resistance, though oxidation control and process windows remain nontrivial.
“Copper-sintered joints offer comparable performance with improved EM resistance, though oxidation control and process windows remain nontrivial [1-3,31,36-38].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [31]
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Interfacial bonding mechanisms of sintered Cu nanoparticles on different metallization surfaces
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Understanding Inherent Implication of Thermal Resistance in Double-Side Cooling Module
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Online Condition Monitoring Methodology for Power Electronics Package Reliability Assessment
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Performance limits of high voltage press-pack SiC IGBT and SiC MOSFET devices
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Self-citationTransient liquid phase bonding method of SnIn for high-temperature packaging
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Influence of Ag particle shape on mechanical and thermal properties of TIM joints
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Sintered Silver-Based Direct-Cooled IGBTs With High Output Power and Thermal Reliability
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Self-citationTransient Liquid Phase Bonding with Sn-Ag-Co Composite Solder for High-Temperature Applications
Kim, B., Cheon, G.-Y., Ko, Y.-H., & Sohn, Y. (2024) · Electronics · doi:10.3390/electronics13112173 · Cited by 4
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Self-citationPressureless Direct Bonding of Au Metallized Substrate with Si Chips by Micro-Ag Particles
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Oxidation-free silver porous sheet bonding onto a bare copper substrate in air
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Self-citationVerification method of the thermal interface resistance by using silicon bare-die
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Reliability of Sintered Cu Joint on Cu Substrate with or without Ag Metallization
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A Thin-film Reconfigurable SiC Thermal Test Chip for Reliability Monitoring in Harsh Environments
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Calibration and Thermal Characterization of Multi-Chip SiC Power Modules: Challenges and Approaches
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Prognostic Monitoring of Power QFN Packages With Silver Sintered Die-Attach Materials
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Review of Power Ultrasonic Micro-nano Joining Technology for Electronic Manufacturing
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Self-citation
Metadata
- Authors
- Kim, D., Nagao, S., Chen, C., Wakasugi, N., Yamamoto, Y., Suetake, A., Takemasa, T., Sugahara, T., & Suganuma, K.
- Affiliations
- The Institute of Scientific and Industrial Research, The University of Osaka (JP)
- Yamato Scientific Co., Ltd. (Japan) (JP)
- Tokuyama (Japan) (JP)
- ORCID
- Venue
- IEEE Transactions on Power Electronics
- Published
- 2021-05
- Volume
- 36
- Issue
- 5
- Pages
- 4977-4990
- ISSN
- 0885-8993 (ISSN-L)
- 1941-0107
- OpenAlex
- W3093584293
- Cited by
- 87
- References
- 82
- Citations by year
- 2026: 13 · 2025: 9 · 2024: 26 · 2023: 18 · 2022: 15 · 2021: 6
- FWCI
- 3.35
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Transactions on Power Electronics (publishedVersion)
- Funders
- Standardization for Energy Conservation
- International Standardization of Thermal Property Measurements for Next Generation Power Electronics
- JST Advanced Low Carbon Technology Research and Development Program
- Development of a high frequency GaN power module package technology (JPMJAL1610, JPNP14004)
- New Energy and Industrial Technology Development Organization
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Electronic Packaging and Soldering Technologies
- Physical Sciences › Materials Science › Materials Chemistry › Thermal properties of materials
- Keywords
- silicon carbide power modules, thermal resistance measurement, lead-free solder, die attach, power cycling reliability, high-temperature reliability, thermal interface materials, 4H-SiC
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