The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Active Gate Driver for Dynamic Current Balancing of Parallel-Connected SiC MOSFETs
Abstract
In high-power applications, parallel connection of discrete silicon carbide (SiC)mosfets is necessary to increase the current rating. However, the unbalanced dynamic current during switching transient may cause unequal power loss and thermal distribution, which is a great challenge in parallel applications. In this article, a dynamic current balancing method based on a new active gate driver (AGD) is proposed to improve the current sharing. The principle of the AGD is based ondi/dtfeedback control and voltage controlled current source to adjust gate drive current of SiCmosfets. Therefore, the switching trajectory of the paralleled devices can be changed to achieve current balance. In addition, by using master-slave control strategy, the proposed AGD can be easily used for multiple paralleled devices. The double pulse tests are conducted to verify the effectiveness of the proposed AGD. For two paralleled devices, the turn-onand turn-offswitching energy imbalances are reduced from 13.4% and 56.0% (12.1% and 52.9%) to 8.8% and 15.3% (8.0% and 8.8%) by the current source (current sink) circuit. For six paralleled devices, the degrees of turn-onand turn-offswitching energy imbalances can be reduced from 21.8% and 16.1% to 11.8% and 7.8% by the proposed AGD.
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“For active methods, they are based on switching behavior regulation and therefore can only suppress the transient imbalance current.”
From An Effective Current Balancing Method for Inverters With Paralleled Silicon Carbide Power Modules (2023) · cites this paper as [23]
Citations
Cites
Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs
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Cited by
An Effective Current Balancing Method for Inverters With Paralleled Silicon Carbide Power Modules
Lin, N., Zhao, Y., & Mantooth, H. A. (2023) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2023.3306750 · Cited by 13
Metadata
- Authors
- He, Y., Wang, X., Shao, S., & Zhang, J.
- Venue
- IEEE Transactions on Power Electronics
- Published
- 2023-05
- Volume
- 38
- Issue
- 5
- Pages
- 6116-6127
- ISSN
- 0885-8993
- 1941-0107
- Cited by
- 59
- References
- 1
- Licence
- Funders
- Key-Area Research and Development Program of Guangdong Province (2021B0101310004)
- Eaton Corporation
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