The DOI matches its Crossref record.
Soft x-ray reduction lithography using multilayer mirrors
Abstract
A soft x-ray lithograpy using multilayer mirrors for demagnifying optics and a reflecting mask has been designed and studied experimentally. In this system, a wavelength of 45–130 Å has been selected based on the optical characteristics, the exposed depth of the resist film, and the reflectivity of the multilayer mirror. To obtain a replication pattern resolution of 0.2 μm, the numerical aperture required is estimated to be greater than 0.0125 or 0.0325 for a wavelength of 50 or 130 Å, respectively. These values show that the multilayer optics using two mirrors can be realized to replicate a 0.2 μm pattern. The experiments were performed on the SR beamline BL-1 of the KEK-PF storage ring. The Schwarzschild demagnifying optics with a ring field were designed and fabricated. Demagnified exposure patterns of less than 0.5 μm have been obtained using a reflecting mask. The feasibility of the soft x-ray reduction method using multilayer mirrors has been confirmed. Furthermore, new telecentric optics are proposed to realize a practical reduction lithography system.
Overview
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
Citations
Cited by
Sorted by citations
Items 101–200 of 271
Endo, H., Inaba, T., Pahlovy, S. A., et al. (2009) · Microelectronic Engineering · doi:10.1016/j.mee.2009.11.124 · Cited by 10
Komuro, Y., Kawana, D., Hirayama, T., et al. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.036506 · Cited by 9
Enomoto, S., & Kozawa, T. (2018) · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · doi:10.1116/1.5023061 · Cited by 9
Ohnishi, R., Watanabe, T., Fukushima, Y., et al. (2009) · Japanese Journal of Applied Physics · doi:10.1143/jjap.48.06fa08 · Cited by 9
Self-citationEUV Resist Chemical Reaction Analysis using SR
Watanabe, T., Emura, K., Shiono, D., et al. (2013) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.26.635 · Cited by 9
Self-citationYamamoto, M., HOTTA, Y., & Sato, M. (2003) · Thin Solid Films · doi:10.1016/s0040-6090(03)00287-6 · Cited by 9
Experimental Results Obtained using Extreme Ultraviolet Laboratory Tool at New SUBARU
Kinoshita, H., & Watanabe, T. (2000) · Japanese Journal of Applied Physics · doi:10.1143/jjap.39.6771 · Cited by 9
Self-citationRing-Field Extreme Ultraviolet Exposure System Using Aspherical Mirrors
Murakami, K., Oshino, T., Kinoshita, H., et al. (1998) · Japanese Journal of Applied Physics · doi:10.1143/jjap.37.6750 · Cited by 9
Self-citationOptimization of Photoacid Generator in Photoacid Generation-Bonded Resist
Fukushima, Y., Watanabe, T., Ohnishi, R., et al. (2008) · Japanese Journal of Applied Physics · doi:10.1143/jjap.47.6293 · Cited by 8
Self-citationCurrent status and prospect for EUV lithography
Watanabe, T. (2017) · International Conference on Integrated Circuits, Design, and Verification (ICDV) · doi:10.1109/icdv.2017.8188625 · Cited by 8
Resist Outgassing Characteristics in Extreme Ultraviolet Lithography
Watanabe, T., Hamamoto, K., Kinoshita, H., et al. (2004) · Japanese Journal of Applied Physics · doi:10.1143/jjap.43.3713 · Cited by 8
Self-citationDifferential equation design of finite-conjugate reflective systems
Wang, C., & Shealy, D. L. (1993) · Applied Optics · doi:10.1364/ao.32.001179 · Cited by 8
Kozawa, T., Santillan, J. J., & Itani, T. (2016) · Japanese Journal of Applied Physics · doi:10.7567/jjap.55.096501 · Cited by 8
Development of the Transmittance Measurement for EUV Resist by Direct-Resist Coating on a Photodiode
Mamezaki, D., Watanabe, M., Harada, T., & Watanabe, T. (2016) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.29.749 · Cited by 7
Yasuda, M., Koyama, M., Fukunari, K., et al. (2019) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.32.339 · Cited by 7
Research Activities of Extreme Ultraviolet Lithography at the University of Hyogo
Watanabe, T., & Harada, T. (2019) · Synchrotron Radiation News · doi:10.1080/08940886.2019.1634435 · Cited by 7
Development of EUV Resists in University of Hyogo
Watanabe, T., & Kinoshita, H. (2007) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.20.373 · Cited by 7
Self-citationSoft X-ray projection imaging with multilayer reflection masks
Ito, M., Oizumi, H., Soga, T., et al. (1995) · Microelectronic Engineering · doi:10.1016/0167-9317(94)00108-7 · Cited by 7
New Concept for the Development of High-Performance X-ray Lithography
Chkhalo, N. I. (2024) · Russian Microelectronics · doi:10.1134/s1063739724600511 · Cited by 6
“Research in the field of EUV lithography at a wavelength of λ = 13.5 nm began in the 1980s [8].”
InfluentialOzatay, O., Mather, P. G., Thiele, J.-U., et al. (2010) · Elsevier eBooks · doi:10.1016/b978-0-12-374396-1.00142-2 · Cited by 6
PAG Study of PAG Bonded Resist for EUV and EB Lithography
Fukushima, Y., Watanab, T., Ohnishi, R., et al. (2008) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.21.465 · Cited by 6
Self-citationKozawa, T. (2014) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.016503 · Cited by 6
Fukushima, Y., Watanabe, T., Ohnishi, R., et al. (2007) · Japanese Journal of Applied Physics · doi:10.1143/jjap.46.6198 · Cited by 6
Self-citationKozawa, T., Santillan, J. J., & Itani, T. (2016) · Japanese Journal of Applied Physics · doi:10.7567/jjap.56.016501 · Cited by 6
Harada, T., & Watanabe, T. (2018) · International Conference on Extreme Ultraviolet Lithography · doi:10.1117/12.2502009 · Cited by 6
Normal-Incidence X-Ray Microscope for Carbon Kα Radiation with 0.5 µm Resolution
Murakami, K., Oshino, T., Nakamura, H., et al. (1992) · Japanese Journal of Applied Physics · doi:10.1143/jjap.31.l1500 · Cited by 6
Design and analysis of aspherical multilayer imaging x-ray microscope
Shealy, D. L., Jiang, W., & Hoover, R. B. (1991) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.23185 · Cited by 6
Soft-x-ray projection imaging with a 1:1 ring-field optic
MacDowell, A. A., Bjorkholm, J. E., Early, K., et al. (1993) · Applied Optics · doi:10.1364/ao.32.007072 · Cited by 6
Reactive ion etching of multilayer mirrors for X-ray projection lithography masks
Malek, C. K., Ladan, F. R., Carre, M., et al. (1991) · Microelectronic Engineering · doi:10.1016/0167-9317(91)90094-t · Cited by 6
Optical Design for Soft X-Ray Projection Lithography
Watanabe, Y. X., Suzuki, M., Mochizuki, N., et al. (1991) · Japanese Journal of Applied Physics · doi:10.1143/jjap.30.3053 · Cited by 6
Design and analysis of soft x-ray imaging microscopes
Shealy, D. L., Wang, C., Jiang, W., et al. (1992) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.51229 · Cited by 6
Emerging trends in fluorescent nanodiamond quantum sensing
Hui, Y. Y., Le, T., Yang, T., Chen, J., & Chang, H. (2024) · Nano Futures · doi:10.1088/2399-1984/ad9975 · Cited by 6
Accurate measurement of EUV multilayer period thicknesses by in situ automatic ellipsometry
Tsuru, T., Tsutou, T., Hatano, T., et al. (2005) · Journal of Electron Spectroscopy and Related Phenomena · doi:10.1016/j.elspec.2005.01.087 · Cited by 5
Satō, T., Yamakawa, M., Ochiai, Y., et al. (2014) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2045654 · Cited by 5
Fujiwara, K., Pahlovy, S. A., & Miyamoto, I. (2011) · Microelectronic Engineering · doi:10.1016/j.mee.2011.02.021 · Cited by 5
Reduction Imaging at 4.5 nm with Schwarzschild Optics
Nagata, H., Ohtani, M., Murakami, K., et al. (1994) · Japanese Journal of Applied Physics · doi:10.1143/jjap.33.l1192 · Cited by 5
Outgassing Analysis in EUV Resist
Hada, H., Watanabe, T., Kinoshita, H., et al. (2005) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.18.475 · Cited by 5
Self-citationX-ray imaging at the diffraction limit
Raab, E. L., Tennant, D. M., Waskiewicz, W. K., et al. (1991) · Journal of the Optical Society of America A · doi:10.1364/josaa.8.001614 · Cited by 5
Kozawa, T., Santillan, J. J., & Itani, T. (2017) · Japanese Journal of Applied Physics · doi:10.7567/jjap.56.066501 · Cited by 5
Mitigation of Low Outgassing and Small Line Edge Roughness for EUVL Resist
Watanabe, T., Kinoshita, H., Hamamoto, K., et al. (2004) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.17.361 · Cited by 5
Self-citationEUV Lithography: Today and Tomorrow
Banine, V. (2013) · doi:10.1002/9781118678107.ch9 · Cited by 5
Halogenated Metal‐Organic Clusters for High‐Resolution Extreme Ultraviolet Lithography Resists †
Li, J., Zhu, Z., Ma, T., Li, W., Luo, K., Gu, Y.-Q., Zhao, J., Li, F., & Tu, M. (2025) · Chinese Journal of Chemistry · doi:10.1002/cjoc.70264 · Cited by 4
Yanqiu, 李. L., Yanbei, 南. N., Yuqing, 陈. C., et al. (2023) · Acta Optica Sinica · doi:10.3788/aos230739 · Cited by 4
Laser-Plasma Extreme Ultraviolet Source Incorporating a Cryogenic Xe Target
Amano, S. (2011) · InTech eBooks · doi:10.5772/22403 · Cited by 4
“EUV lithography (EUVL) was first demonstrated by Kinoshita et al. in 1984 at NTT, Japan (Kinoshita et al., 1989).”
MethodLucas, K. D., Postnikov, S. V., Henderson, C., et al. (2003) · Elsevier eBooks · doi:10.1016/b978-044451494-3/50003-2 · Cited by 4
Xe capillary target for laser-plasma extreme ultraviolet source
Inoue, T., Okino, H., Nica, P.-E., et al. (2007) · Review of Scientific Instruments · doi:10.1063/1.2800768 · Cited by 4
Morikawa, K., Kamijo, K., Morijiri, K., et al. (2011) · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · doi:10.1016/j.nimb.2011.01.049 · Cited by 4
Kozawa, T., Santillan, J. J., & Itani, T. (2016) · Japanese Journal of Applied Physics · doi:10.7567/jjap.55.116501 · Cited by 4
In-situContamination Thickness Measurement by Novel Resist Evaluation System at NewSUBARU
Matsuda, N., Watanabe, T., Harada, T., et al. (2011) · Japanese Journal of Applied Physics · doi:10.7567/jjap.50.06gb02 · Cited by 4
Self-citationOn the Prospects of Lithography in the Region of Wavelengths Shorter than 13.5 nm
Чхало, Н. И., Durov, K. V., Nechay, A. N., et al. (2023) · Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques · doi:10.1134/s1027451023070078 · Cited by 4
Fullerene Nanocomposite Resists for Nanolithography
Ishii, T., & Shigehara, K. (2009) · Springer eBooks · doi:10.1007/978-0-387-30428-1_9 · Cited by 4
Niibe, M., Watanabe, T., Nii, H., et al. (2000) · Japanese Journal of Applied Physics · doi:10.1143/jjap.39.6815 · Cited by 4
Self-citationLaser–plasma–source debris-related investigations: an aspect of the ENEA micro-exposure tool
Bollanti, S., Lazzaro, P. D., Flora, F., et al. (2009) · Applied Physics B · doi:10.1007/s00340-009-3583-z · Cited by 4
Fabrication of polymer dot pattern containing fluorescent molecules by laser photopolymerization
Oishi, T., Goto, M., Kasahara, A., et al. (2004) · Applied Physics A · doi:10.1007/s00339-004-2833-5 · Cited by 4
Photoresist Shrinkage Caused by Single-Line Scan of Electron Beam
Ohashi, T., & Tanaka, J. (2012) · Japanese Journal of Applied Physics · doi:10.1143/jjap.51.06fb10 · Cited by 4
In-situ Contamination Thickness Measurement by Novel Resist Evaluation System at NewSUBARU
Matsuda, N., Watanabe, T., Harada, T., et al. (2011) · Japanese Journal of Applied Physics · doi:10.1143/jjap.50.06gb02 · Cited by 4
Self-citationExtreme Ultraviolet Resist Development at the University of Hyogo
Watanabe, T., Fukushima, Y., Shiotani, H., et al. (2007) · Japanese Journal of Applied Physics · doi:10.1143/jjap.46.6118 · Cited by 4
Self-citationYoshifuji, M., Niihara, S., Harada, T., et al. (2019) · Japanese Journal of Applied Physics · doi:10.7567/1347-4065/ab049f · Cited by 4
Yamaguchi, T., Ikuta, H., Yanagi, Y., et al. (2007) · Physica C Superconductivity · doi:10.1016/j.physc.2007.04.310 · Cited by 4
Progress in the development of extreme ultraviolet lithography exposure systems
Stulen, R. H. (1999) · Microelectronic Engineering · doi:10.1016/s0167-9317(99)00007-6 · Cited by 4
High Resolution Soft-X-Ray Projection Imaging
Wood, O. R., Bjorkholm, J. E., Bokor, J., et al. (1991) · doi:10.1364/sxray.1991.wb1 · Cited by 4
Kozawa, T., Santillan, J. J., & Itani, T. (2015) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.28.669 · Cited by 3
Nakahara, T., Watanabe, T., Kinoshita, H., et al. (2009) · Japanese Journal of Applied Physics · doi:10.1143/jjap.48.06fc10 · Cited by 3
Self-citationRecent Activities on Extreme Ultraviolet Lithography in NewSUBARU
Kinoshita, H., Watanabe, T., Harada, T., et al. (2013) · Japanese Journal of Applied Physics · doi:10.7567/jjap.52.06ga01 · Cited by 3
Self-citationAmano, T., & Abe, T. (2015) · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · doi:10.1116/1.4931934 · Cited by 3
Kozawa, T., & Yoshitake, S. (2017) · Japanese Journal of Applied Physics · doi:10.7567/jjap.56.076501 · Cited by 3
Toida, T., Suzuki, A., Uchiyama, N., et al. (2015) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2085470 · Cited by 3
Evaluation of Mo-Based Multilayer EUV Mirrors
Takenaka, H., Kawamura, T., Ishii, Y., et al. (1994) · doi:10.1364/eul.1994.ec.26 · Cited by 3
Self-citationSub-50 nm focusing of a 405 nm laser by hemispherical silicon nanolens
Wang, Z., & Zhang, W. (2020) · Journal of the Optical Society of America B · doi:10.1364/josab.408866 · Cited by 3
“Today, commercial successes have been achieved with EUV lithography [2-6], but the cost of EUV based FAB is still prohibitively high.”
BackgroundCurrent Status and Prospect of Extreme Ultraviolet Lithography
Watanabe, T., & Kinoshita, H. (2008) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.21.777 · Cited by 3
Self-citationKozawa, T. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.056502 · Cited by 3
Structural changes of silicon dioxide films caused by synchrotron irradiation
Park, Y.-B., Rhee, S., Imaizumi, Y., et al. (1996) · Journal of Applied Physics · doi:10.1063/1.362861 · Cited by 3
Transmission Grating Fabrication for Replicating Resist Patterns of 20 nm and Below
Yamaguchi, Y., Fukushima, Y., Harada, T., et al. (2011) · Japanese Journal of Applied Physics · doi:10.1143/jjap.50.06gb10 · Cited by 3
Self-citationWurm, S. (2012) · doi:10.1109/vlsi-tsa.2012.6210110 · Cited by 3
Kozawa, T., Santillan, J. J., & Itani, T. (2016) · Japanese Journal of Applied Physics · doi:10.7567/jjap.55.076501 · Cited by 3
Kozawa, T., Watanabe, K., Matsuoka, K., et al. (2017) · Japanese Journal of Applied Physics · doi:10.7567/jjap.56.086502 · Cited by 3
Kozawa, T., Santillan, J. J., & Itani, T. (2017) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.30.197 · Cited by 3
Niihara, S., Mamezaki, D., Watanabe, M., et al. (2017) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.30.87 · Cited by 3
Modeling multilayer coating profiles with defects on EUV collector with grating
Sun, S., Jin, C., Yu, B., et al. (2019) · Optical Engineering · doi:10.1117/1.oe.58.10.107102 · Cited by 3
“EQ-TARGET;temp:intralink-;e005;63;525ys 1⁄4 R sinðθÞ þ r sin φ; (5)”
Ozatay, O., Hauet, T., Braganca, P. M., et al. (2016) · Elsevier eBooks · doi:10.1016/b978-0-12-803581-8.10098-0 · Cited by 3
CURRENT ISSUES AND FUTURE PROSPECTS OF LITHOGRAPHY
Okazaki, S. (2006) · International Journal of High Speed Electronics and Systems · doi:10.1142/s0129156406003709 · Cited by 3
Extreme Ultraviolet Lithography Development in the United States
Wood, O. R. (2006) · Japanese Journal of Applied Physics · doi:10.1143/jjap.45.5349 · Cited by 3
Ion beam machining of Si layer deposited on Zerodur® substrate
Kurashima, Y., Tajima, T., Miyamoto, I., et al. (2008) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.2907779 · Cited by 3
Reduction imaging with soft x rays for projection lithography
MacDowell, A. A., Bjorkholm, J. E., Bokor, J., et al. (1992) · Review of Scientific Instruments · doi:10.1063/1.1142648 · Cited by 3
Inoue, T., Amano, S., Miyamoto, S., et al. (2006) · The Review of Laser Engineering · doi:10.2184/lsj.34.570 · Cited by 3
Gupta, T. K. (2009) · Springer eBooks · doi:10.1007/978-1-4419-0076-0_4 · Cited by 3
Soft-X-ray Projection Lithography Experiments using Schwarzschild Imaging Optics
Tichenor, D. A., Kubiak, G. D., Malinowski, M., et al. (1992) · doi:10.1364/sxray.1992.wa1 · Cited by 3
Effective EUV Resist Outgassing Barrier Using a Novel Top Coat Material
Wang, X., Pawlowski, G., Okayasu, T., et al. (2015) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.28.111 · Cited by 2
Self-citationCurrent Status and Development Activities on EUV Lithography
Okazaki, S. (2004) · The Review of Laser Engineering · doi:10.2184/lsj.32.744 · Cited by 2
The Molded Mask Method: The Origin of Nanoimprint Lithography
Fujimori, S. (2016) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.29.849 · Cited by 2
Photoresist Shrinkage Caused by Single-Line Scan of Electron Beam
Ohashi, T., & Tanaka, J. (2012) · Japanese Journal of Applied Physics · doi:10.7567/jjap.51.06fb10 · Cited by 2
Application of Reactive Ion Etching to the Fabrication of Microstructure on Mo/Si Multilayer
Le, Z., Dreeskornfeld, L., Rahn, S., et al. (1999) · Chinese Physics Letters · doi:10.1088/0256-307x/16/9/016 · Cited by 2
Iwata, T., Fujiwara, K., Pahlovy, S. A., et al. (2009) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.3253616 · Cited by 2
Kamijo, K., Uozumi, R., Moriziri, K., et al. (2009) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.3258154 · Cited by 2
Aerial image improvements on the Intel MET
Caudillo, R., Younkin, T. R., Putna, S., et al. (2010) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.849142 · Cited by 2
Soft x-ray optics for synchrotron radiation
Namioka, T., Koike, M., Kinoshita, H., et al. (1995) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.215581 · Cited by 2
Self-citationMorijiri, K., Endo, H., Morikaawa, K., et al. (2011) · Microelectronic Engineering · doi:10.1016/j.mee.2011.01.011 · Cited by 2
EUVL Research Activity at Center for EUV Lithography
Watanabe, T., & Harada, T. (2016) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.29.737 · Cited by 2
Z-Pinch Discharge Plasma Based EUV Sources
KATSUKI, S., Sakugawa, T., Namihira, T., et al. (2005) · プラズマ・核融合学会誌 · doi:10.1585/jspf.81.231 · Cited by 2
Challenges in Development of Sub-10 nm Resist Materials
Kozawa, T., Santillan, J. J., & Itani, T. (2016) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.29.717 · Cited by 2
Metadata
- Authors
- Kinoshita, H., Kurihara, K., Ishii, Y., & Torii, Y.
- Affiliations
- NTT (Japan) (JP)
- ORCID
- Kurihara, K.
- Venue
- Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
- Publisher
- American Vacuum Society
- Published
- 1989-11-01
- Volume
- 7
- Issue
- 6
- Pages
- 1648-1651
- ISSN
- 0734-211X (ISSN-L)
- 2327-9877
- OpenAlex
- W1999734163
- Cited by
- 270
- References
- 0
- Citations by year
- 2026: 1 · 2025: 5 · 2024: 9 · 2023: 5 · 2022: 1 · 2021: 2 · 2020: 2 · 2019: 6 · 2018: 5 · 2017: 12 · 2016: 13 · 2015: 15 · 2014: 14 · 2013: 10 · 2012: 4
- FWCI
- 10.39
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Particle Accelerators and Free-Electron Lasers
- Keywords
- soft X-ray lithography, multilayer mirrors, telecentric optics, numerical aperture, pattern resolution, synchrotron radiation
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review