Evaluation of Lines and Spaces printing and general understanding of imaging with dark field low-n mask

Abstract

BackgroundOne of the ways to push down resolution limits in extreme ultraviolet (EUV) lithography is to use alternative masks. New types of absorbers are being broadly investigated for current 0.33 NA as well as for high NA of 0.55.AimWe study the imaging performance of a low-n/low-k absorber (ABS) dark field (DF) mask for lines and spaces (LS) printing at 0.33 NA.ApproachExperimentally and via simulations, we investigate the use of low-n DF masks for a metal direct print application and compare low-n mask performance with Ta-based ABS masks.ResultsCompared to a Ta-based ABS mask used nowadays, the low-n DF mask brings contrast gain for dense LS. Also, for low-n masks, we observe large best focus (BF) shifts for isolated features with respect to dense features and change of bias. Hence, strong mask critical dimensions (CD) control is needed. We demonstrate how adding assist features can align BF through pitch. In addition, placing subresolution assist features (SRAFs) significantly enhances exposure latitude for semi/iso and iso-LS and improves the overlapping process window for selected cases.ConclusionsThese investigations show that low-n DF masks can enhance the imaging of LS through pitch if SRAFs are used and a good mask CD control is achieved. Our work further adds fundamental understanding to advantages observed for a metal direct print application of alternative ABS masks for the current and future EUV tools.