EUV lithography optics for sub-9nm resolution
Abstract
EUV lithography for resolution below 9 nm requires the numerical aperture of the projection optics to be significantly larger than 0.45. A configuration of 4x magnification, full field size and 6’’ reticle is not feasible anymore. The increased chief ray angle and higher NA at reticle lead to non-acceptable shadowing effects, which can only be controlled by increasing the magnification, hence reducing the system productivity. We demonstrate that the best compromise in imaging, productivity and field split is a so-called anamorphic magnification and a half field of 26 x 16.5 mm². We discuss the optical solutions for anamorphic high-NA lithography.
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Next-generation EUV scanners with an NA of 0.55 (high-NA) will be used for research and development in 2024-2025 and in high-volume manufacturing in 2025-2026.
“the next generation of EUV scanners with an NA of 0.55, referred to as high-NA systems, will be used for research and development in 2024-2025 and in HVM in 2025-2026 35-37 .”
From Extreme ultraviolet lithography (2024) · cites this paper as [35]
Modern EUV scanners used in high-volume manufacturing have an NA of 0.33.
“Modern EUV scanners used in HVM have an NA of 0.33”
From Extreme ultraviolet lithography (2024) · cites this paper as [35]
Cites
Interactions of 3D mask effects and NA in EUV lithography
Neumann, J. T., Gräupner, P., Kaiser, W. M., et al. (2012) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2009117 · Cited by 34 · see citing works
Self-citationKearney, P. A., Wood, O. R., Hendrickx, E., et al. (2014) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2048397 · Cited by 15 · see citing works
Multilayer optics with spectral purity layers for the EUV wavelength range
Louis, E., van de Kruijs, R. W. E., Yakshin, A., et al. (2006) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.675132 · Cited by 5 · see citing works
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Extreme ultraviolet lithography
Kazazis, D., Santaclara, J. G., van Schoot, J., Mochi, I., & Ekinci, Y. (2024) · Nature Reviews Methods Primers · doi:10.1038/s43586-024-00361-z · Cited by 149 · see citing works
Self-citationHigh-numerical aperture extreme ultraviolet scanner for 8-nm lithography and beyond
van Schoot, J., van Setten, E., Rispens, G., Troost, K. Z., Kneer, B., Migura, S., Neumann, J. T., & Kaiser, W. (2017) · Journal of Micro/Nanopatterning, Materials, and Metrology · doi:10.1117/1.jmm.16.4.041010 · Cited by 57 · see citing works
Self-citationExposure Tool Development Toward Advanced EUV Lithography: A Journey of 40 Years Driving Moore’s Law
Schoot, J. V. (2024) · IEEE Electron Devices Magazine · doi:10.1109/med.2023.3337129 · Cited by 25 · see citing works
- Authors
- Kneer, B., Migura, S., Kaiser, W., Neumann, J. T., & van Schoot, J.
- ORCID
- Kaiser, Winfried
- Venue
- SPIE Proceedings
- Publisher
- SPIE
- Published
- 2015-03-16
- Volume
- 9422
- Pages
- 94221G
- ISSN
- 0277-786X (ISSN-L)
- OpenAlex
- W2011236388
- Cited by
- 69
- References
- 3
- Citations by year
- 2026: 1 · 2025: 5 · 2024: 9 · 2023: 4 · 2022: 2 · 2021: 4 · 2020: 2 · 2019: 4 · 2018: 4 · 2017: 9 · 2016: 11 · 2015: 14
- FWCI
- 15.69
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (publishedVersion)
- Funders
- Bundesministerium für Bildung und Forschung
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Engineering › Biomedical Engineering › Advanced optical system design
- Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
- Keywords
- EUV lithography, high numerical aperture, projection optics, shadowing, magnification, reticle
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