High-numerical aperture extreme ultraviolet scanner for 8-nm lithography and beyond
Abstract
Current extreme ultraviolet (EUV) projection lithography systems exploit a projection lens with a numerical aperture (NA) of 0.33. It is expected that these will be used in mass production in the 2018/2019 timeframe. By then, the most difficult layers at the 7-nm logic and the mid-10-nm DRAM nodes will be exposed. These systems are a more economical alternative to multiple-exposure by 193 argon fluoride immersion scanners. To enable cost-effective shrink by EUV lithography down to 8-nm half pitch, a considerably larger NA is needed. As a result of the increased NA, the incidence angles of the light rays at the mask increase significantly. Consequently, the shadowing and the variation of the multilayer reflectivity deteriorate the aerial image contrast to unacceptably low values at the current 4× magnification. The only solution to reduce the angular range at the mask is to increase the magnification. Simulations show that the magnification has to be doubled to 8× to overcome the shadowing effects. Assuming that the mask infrastructure will not change the mask form factor, this would inevitably lead to a field size that is a quarter of the field size of the current 0.33-NA step and scan systems and reduce the throughput (TPT) of the high-NA scanner to a value below 100 wafers per hour unless additional measures are taken. This paper presents an anamorphic step and scan system capable of printing fields that are half the field size of the current full field. The anamorphic system has the potential to achieve a TPT in excess of 150 wafers per hour by increasing the transmission of the optics, as well as increasing the acceleration of the wafer stage and mask stage. This makes it an economically viable lithography solution.
Integrity signals
Registry
Cites
Statistics
Claims the paper makes
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
Modern EUV scanners used in high-volume manufacturing have an NA of 0.33.
“Modern EUV scanners used in HVM have an NA of 0.33”
From Extreme ultraviolet lithography (2024) · cites this paper as [36]
Next-generation EUV scanners with an NA of 0.55 (high-NA) will be used for research and development in 2024-2025 and in high-volume manufacturing in 2025-2026.
“the next generation of EUV scanners with an NA of 0.55, referred to as high-NA systems, will be used for research and development in 2024-2025 and in HVM in 2025-2026 35-37 .”
From Extreme ultraviolet lithography (2024) · cites this paper as [36]
Cites
Beiträge zur Theorie des Mikroskops und der mikroskopischen Wahrnehmung
Abbe, E. (1873) · Archiv für Mikroskopische Anatomie · doi:10.1007/bf02956173 · Cited by 2,747 · see citing works
Soft x-ray reduction lithography using multilayer mirrors
Kinoshita, H., Kurihara, K., Ishii, Y., & Torii, Y. (1989) · Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena · doi:10.1116/1.584507 · Cited by 270 · cited 2× · see citing works
“3 Further reduction to wavelengths close to 10 nm has been proposed by Kinoshita.4 At the same k1, a so-called EUV scanner with λ ¼ 13.5 nm and NA 0.335,6 has a 3.5× resolution advantage over an immersion scanner with λ ¼ 193 nm and NA 1.35.”
MethodInfluentialResist blur and line edge roughness
Gallatin, G. M. (2005) · Optical Microlithography XVIII · doi:10.1117/12.607233 · Cited by 251 · see citing works
Enabling sub-10nm node lithography: presenting the NXE:3400B EUV scanner
van de Kerkhof, M. A., Jasper, H., Levasier, L., et al. (2017) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2258025 · Cited by 87 · see citing works
Overlay and edge placement control strategies for the 7nm node using EUV and ArF lithography
Mulkens, J., Hanna, M., Wei, H., Vaenkatesan, V., Megens, H. J. L., & Slotboom, D. (2015) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2085761 · Cited by 71 · see citing works
EUV lithography optics for sub-9nm resolution
Kneer, B., Migura, S., Kaiser, W., Neumann, J. T., & van Schoot, J. (2015) · SPIE Proceedings · doi:10.1117/12.2175488 · Cited by 69 · see citing works
Self-citationImprovements in resist performance towards EUV HVM
Yildirim, O., Buitrago, E., Hoefnagels, R., Meeuwissen, M., Wuister, S., Rispens, G., van Oosten, A., Derks, P., Finders, J., Vockenhuber, M., et al. (2017) · SPIE Proceedings · doi:10.1117/12.2257415 · Cited by 69 · see citing works
Self-citationEUV progress toward HVM readiness
Turkot, B. A., Carson, S. L., Lio, A., et al. (2016) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2225014 · Cited by 65 · see citing works
EUV lithography scanner for sub-8nm resolution
van Schoot, J., Schenau, K. V. I., Valentin, C., et al. (2015) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2087502 · Cited by 61 · see citing works
EUV lithography: NXE platform performance overview
Peeters, R., Lok, S., Mallman, J., et al. (2014) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2046909 · Cited by 50 · see citing works
Patterning control strategies for minimum edge placement error in logic devices
Mulkens, J., Hanna, M., Slachter, B., et al. (2017) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2260155 · Cited by 49 · see citing works
Photoresists in extreme ultraviolet lithography (EUVL)
Simone, D. D., Vesters, Y., & Vandenberghe, G. (2017) · Advanced Optical Technologies · doi:10.1515/aot-2017-0021 · Cited by 49 · see citing works
EUV simulation extension study for mask shadowing effect and its correction
Kang, H., Hansen, S., van Schoot, J., et al. (2008) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.772487 · Cited by 44 · see citing works
Finders, J. M., Dusa, M. V., Vleeming, B., Hepp, B., Maenhoudt, M., Cheng, S., & Vandeweyer, T. (2009) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.3079349 · Cited by 43 · see citing works
Finders, J., de Winter, L., & Last, T. (2016) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.jmm.15.2.021408 · Cited by 42 · see citing works
Lin, B. J. (1986) · SPIE Proceedings · doi:10.1117/12.963701 · Cited by 40 · see citing works
Interactions of 3D mask effects and NA in EUV lithography
Neumann, J. T., Gräupner, P., Kaiser, W. M., et al. (2012) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2009117 · Cited by 34 · see citing works
Self-citationContrast optimization for 0.33NA EUV lithography
Finders, J., Wuister, S. F., Last, T., et al. (2016) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2220036 · Cited by 31 · see citing works
Mask effects for high-NA EUV: impact of NA, chief-ray-angle, and reduction ratio
Neumann, J. T., Gräupner, P., Kaiser, W. M., et al. (2013) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2011455 · Cited by 30 · see citing works
Self-citationImpact of wavefront errors on low k1 processes at extremely high NA
Graeupner, P., Garreis, R. B., Goehnermeier, A., et al. (2003) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.482694 · Cited by 29 · see citing works
Mask error factor: causes and implications for process latitude
van Schoot, J. B., Finders, J., Schenau, K. V. I., et al. (1999) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.354338 · Cited by 28 · see citing works
Optics for ASML's NXE:3300B platform
Lowisch, M., Kuerz, P., Conradi, O., Wittich, G., Seitz, W., & Kaiser, W. M. (2013) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2012158 · Cited by 28 · see citing works
Self-citationImaging performance of EUV lithography optics configuration for sub-9nm resolution
Neumann, J. T., Rösch, M., Gräupner, P., et al. (2015) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2175658 · Cited by 24 · see citing works
Self-citationPerformance of a 1.35NA ArF immersion lithography system for 40-nm applications
de Klerk, J., Wagner, C., Droste, R., et al. (2007) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.712094 · Cited by 24 · see citing works
Development and performance of EUV pellicles
Brouns, D. (2017) · Advanced Optical Technologies · doi:10.1515/aot-2017-0023 · Cited by 24 · see citing works
EUV High-NA scanner and mask optimization for sub 8 nm resolution
van Schoot, J., Schenau, K. V. I., Bottiglieri, G., et al. (2015) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2202258 · Cited by 20 · see citing works
Extending 1.35 NA immersion lithography down to 1x nm production nodes
Bouchoms, I., Leenders, M., Kuit, J.-J., et al. (2012) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.915807 · Cited by 16 · see citing works
Combined overlay, focus and CD metrology for leading edge lithography
Ebert, M., Cramer, H., Tel, W., et al. (2011) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.881428 · Cited by 16 · see citing works
Understanding the litho-impact of phase due to 3D mask effects when using off-axis illumination
de Winter, L., Last, T., Davydova, N. V., et al. (2015) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2195469 · Cited by 15 · see citing works
Kearney, P. A., Wood, O. R., Hendrickx, E., et al. (2014) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2048397 · Cited by 15 · see citing works
Design technology co-optimization for a robust 10nm Metal1 solution for logic design and SRAM
Vandewalle, B., Chava, B., Sakhare, S., et al. (2014) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2048079 · Cited by 14 · see citing works
EUV high-NA scanner and mask optimization for sub-8nm resolution
van Schoot, J., Schenau, K. V. I., Bottiglieri, G., et al. (2016) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2220150 · Cited by 12 · see citing works
Last, T., de Winter, L., van Adrichem, P. J. M., et al. (2016) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.jmm.15.4.043508 · Cited by 11 · see citing works
EUV mask defectivity – a process of increasing control toward HVM
Jonckheere, R. (2017) · Advanced Optical Technologies · doi:10.1515/aot-2017-0017 · Cited by 10 · see citing works
Resist process applications to improve EUV patterning
Petrillo, K. E., Cho, K., Friz, A. M., et al. (2013) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2011566 · Cited by 8 · see citing works
Last, T., Wang, Z., van Adrichem, P. J. M., et al. (2016) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2240862 · Cited by 8 · see citing works
Toward sub-20nm pitch Fin patterning and integration with DSA
Sayan, Ş., Marzook, T., Chan, B. T., Vandenbroeck, N., Singh, A., Laidler, D. W., Sánchez, E. A., Leray, P. J., Delgadillo, P. R., Gronheid, R., et al. (2016) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2220120 · Cited by 7 · see citing works
Trench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP)
Feurprier, Y., Lutker-Lee, K., Rastogi, V., et al. (2015) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2086519 · Cited by 7 · see citing works
Xu, K., Souriau, L., Hellin, D., et al. (2013) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.jmm.12.4.041302 · Cited by 6 · see citing works
Technological innovations for a sustainable business model in the semiconductor industry
Levinson, H. (2014) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2060976 · Cited by 5 · see citing works
The lithographer's dilemma: shrinking without breaking the bank
Levinson, H. (2013) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2030193 · Cited by 4 · see citing works
Industrialization of a Laser Produced Plasma EUV Light Source for Lithography
Fomenkov, I. V., Schafgans, A. A., Rokitski, S. I., et al. (2017) · Conference on Lasers and Electro-Optics · doi:10.1364/cleo_at.2017.atu4c.4 · Cited by 3 · see citing works
Optimizing Numerical Aperture and Partial Coherence
Mack, C. A. (1996) · Cited by 2 · see citing works
Flagged first, then by citations
Cited by
Sorted by citations
Extreme ultraviolet lithography
Kazazis, D., Santaclara, J. G., van Schoot, J., Mochi, I., & Ekinci, Y. (2024) · Nature Reviews Methods Primers · doi:10.1038/s43586-024-00361-z · Cited by 149 · see citing works
Self-citationExposure Tool Development Toward Advanced EUV Lithography: A Journey of 40 Years Driving Moore’s Law
Schoot, J. V. (2024) · IEEE Electron Devices Magazine · doi:10.1109/med.2023.3337129 · Cited by 25 · see citing works
- Authors
- van Schoot, J., van Setten, E., Rispens, G., Troost, K. Z., Kneer, B., Migura, S., Neumann, J. T., & Kaiser, W.
- Affiliations
- ASML Netherlands B.V.
- ASML (Netherlands) (NL)
- Carl Zeiss (Germany) (DE)
- Venue
- Journal of Micro/Nanopatterning, Materials, and Metrology
- Publisher
- SPIE-Intl Soc Optical Eng
- Published
- 2017-10-30
- Volume
- 16
- Issue
- 04
- Pages
- 1-16
- ISSN
- 2708-8340 (ISSN-L)
- OpenAlex
- W2766524046
- Cited by
- 57
- References
- 43
- Citations by year
- 2026: 2 · 2025: 5 · 2024: 15 · 2023: 7 · 2022: 11 · 2021: 1 · 2020: 2 · 2019: 8 · 2018: 5 · 2017: 1
- FWCI
- 1.82
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Journal of Micro/Nanopatterning Materials and Metrology (publishedVersion)
- Funders
- Electronic Component Systems for European Leadership Undertaking (662338)
- SeNaTe (662338, ECSEL152002, 16ESE0036K)
- Electronic Component Systems for European Leadership Joint Undertaking (662338)
- Electronic Component Systems for European Leadership (662338)
- ETIK (16N12256K)
- E450LMDAP (ENIA142001, 16ES0255K, 621280)
- TAKE5 (ECSL162004, 16ESE0072K, 692522)
- TAKEMI5 (ECSL172001, 737479)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Engineering › Biomedical Engineering › Advanced optical system design
- Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
- Keywords
- EUV lithography, high numerical aperture, aerial image contrast, shadowing, multilayer reflectivity, magnification, throughput, field size reduction
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
