Cited by 11Advancements in Photolithography TechniquesIndustrial Vision Systems and Defect DetectionAdvanced optical system design

The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.

Lithographic stochastics: beyond 3σ

Bristol, Robert L., Krysak, Marie E.·2017·SPIE Proceedings

Abstract

As lithography tools continue their progress in both NA and wavelength in pursuit of Moore’s law, we have reached the point where the number of features printed in a single pass can now easily surpass 1 trillion. Statistically, then, one should not be surprised to see some members of such a population exhibit fluctuations as great as 7σ. But what do these fluctuations look like? We consider the problem in terms of variations in the effective local resist sensitivity caused by feature-to-feature differences in absorbed photons and resist component counts. We model such variations as a normal distribution, rather than the CDs themselves. As the CD vs. Dose curve is generally nonlinear over large ranges, the normal distribution of the local effective sensitivity then maps to a non-normal distribution in CD. For the case of individual vias printed near the resolution limit, this results in many more such undersized or completely closed vias than one would expect from a normal distribution of the CDs. We show examples of this behavior from both EUV exposures in the fab, and ebeam exposures in the lab. For the latter, results from a simple resist with a somewhat low quencher loading produce approximately the CD variation one would expect by modeling the quencher as distributed normally in the resist.

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Crossref · 10.1117/12.2264046

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7 of 7 references verified0 citation errors · 0 not checkable

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Research works printed but not linked: 2

  1. Lane, David M, Introduction to Statistics Chp 7, Online edition, http://onlinestatbook.com/Online_Statistics_Education.pdf
  2. M. Born and E. Wolf, Principles of Optics (Pergamon Press, New York, 1965)

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Metadata

Authors
Bristol, R. L., & Krysak, M. E.
Affiliations
Intel (United States) (US)
Venue
SPIE Proceedings
Publisher
SPIE
Published
2017-03-24
Volume
10143
Pages
101430Z
ISSN
0277-786X (ISSN-L)
OpenAlex
W2600924476
Cited by
11
References
7
Citations by year
2024: 2 · 2022: 1 · 2019: 3 · 2018: 5
FWCI
3.10
Type
conference paper
Language
en
Open access
closed
Locations
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
  • Physical Sciences › Engineering › Industrial and Manufacturing Engineering › Industrial Vision Systems and Defect Detection
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Advanced optical system design
Keywords
EUV lithography, electron beam lithography, Moore's law

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