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Stochastic printing failures in extreme ultraviolet lithography
Abstract
Stochastic effects in lithography are known to be the cause of critical dimension (CD) variability, quantified, e.g., by linewidth roughness or local CD uniformity, but—when the CDs are small—they can also lead to printing failures, and hence have a significant impact on yield. We will focus on these printing failures and review three important topics in this relatively new field. First, we will look at how these failures can be detected and show how either CD-SEM, e-beam inspection, and optical defect inspection can play a useful role. Next, we consider the important question of how the stochastic failure probability (which we quantify by a metric we call “Not OK,” abbreviated NOK) depends on the lithography- and process-settings, a question that is of obvious importance when looking for conditions that will minimize the failure probability and hence maximize the yield. Finally, we will discuss to what extent we can fit experimentally observed failure probabilities, to empirical models. Such models can play a vital role in future OPC-verification flows, where screening full mask layouts for “stochastic hot spots” is expected to become a mandatory step.
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Exposure defects can arise from mask particles or defects, resist and underlayer impurities, or local random stochastic defects that need proper characterization.
“Such defects can arise either from mask particles or defects, resist and underlayer impurities, or local random defects that are stochastic and need proper characterization 84 .”
From Extreme ultraviolet lithography (2024) · cites this paper as [84]
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Kamei, Y., Sano, Y., Yamauchi, T., Kawakami, S., Tadokoro, M., Enomoto, M., Muramatsu, M., Nafus, K., Sonoda, A., Demand, M., et al. (2019) · Extreme Ultraviolet (EUV) Lithography · doi:10.1117/12.2514930
Kamohara, I., Welling, U., Klostermann, U. K., & Demmerle, W. (2021) · IEICE Transactions on Electronics · doi:10.1587/transele.2021ecp5010
Highly spatial-resolved chemical metrology on latent resist imagesPreprint
van Es, M. H., Tamer, M. S., Bloem, E., Fillinger, L., van Zeijl, E., Maturová, K., van der Donck, J. C. J., Willekers, R. W., & Maas, D. J. (2022) · Research Square · doi:10.21203/rs.3.rs-1238936/v1
Highly spatially resolved chemical metrology on latent resist imagesPreprint
van Es, M. H., Tamer, M. S., Bloem, E., Fillinger, L., van Zeijl, E., Maturová, K., van der Donck, J. C. J., Willekers, R. W., & Maas, D. J. (2022) · Research Square · doi:10.21203/rs.3.rs-1238936/v2
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Sugimori, T., Ogawa, R., Takekoshi, H., Hartley, J. G., Pinckeny, D. J., Ando, A., Ishii, K., Noda, C., & Kikuiri, N. (2021) · Photomask and next-generation lithography mask technology. Conference · doi:10.1117/12.2598235
Transparent windows in a layered medium with mosaic layers.Windows distribution by area
Brodskii, R. Y. (2024) · Physica A Statistical Mechanics and its Applications · doi:10.1016/j.physa.2024.129651
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Naab, B. D., Park, J. K., Aqad, E., Cen, Y., Coley, S. M., Cui, L., Hoelzel, C., Lee, C. B., Behnke, J., Rena, R., et al. (2024) · Advances in Patterning Materials and Processes · doi:10.1117/12.3010493
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Janes, D. W., & Innocent‐Dolor, J. (2025) · SPIE Novel Patterning Technologies · doi:10.1117/12.3052802
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Maeng, K.-S., Chung, N.-Y., Kim, S., Choa, H., Lim, Y.-J., Jang, H.-R., Kim, I., Park, J., Fan, Y., Cao, P., et al. (2025) · Metrology, Inspection, and Process Control XXXVI · doi:10.1117/12.3050663
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Wang, J., & Kozawa, T. (2025) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.38.349
Improving pattern fidelity for DSA line/space structures at 24nm pitch
Innocent‐Dolor, J., & Janes, D. W. (2026) · SPIE Novel Patterning Technologies · doi:10.1117/12.3091001
Metadata
- Authors
- De Bisschop, P.
- Affiliations
- IMEC
- ORCID
- De Bisschop, Peter
- Venue
- Journal of Micro/Nanopatterning, Materials, and Metrology
- Publisher
- SPIE-Intl Soc Optical Eng
- Published
- 2018-09-25
- Volume
- 17
- Issue
- 04
- Pages
- 1-23
- ISSN
- 2708-8340 (ISSN-L)
- OpenAlex
- W2892656911
- Cited by
- 75
- References
- 36
- Citations by year
- 2026: 2 · 2025: 9 · 2024: 11 · 2023: 4 · 2022: 11 · 2021: 11 · 2020: 3 · 2019: 22 · 2018: 2
- FWCI
- 3.64
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Journal of Micro/Nanopatterning Materials and Metrology (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Engineering › Industrial and Manufacturing Engineering › Industrial Vision Systems and Defect Detection
- Physical Sciences › Materials Science › Surfaces, Coatings and Films › Nanofabrication and Lithography Techniques
- Keywords
- EUV lithography, failure probability, yield, defect detection, CD-SEM, electron beam inspection, optical proximity correction
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