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Resolution, LER, and sensitivity limitations of photoresists
Open accessAbstract
Recent experimental results and modeling both indicate that whereas it is possible to optimize a photoresist and process to achieve separately a desired resolution or line edge roughness or sensitivity, it will be difficult if not impossible to achieve all three simultaneously using current standard chemically amplified photoresists and processes. This tradeoff among Resolution, Line Edge Roughness (LER) and Sensitivity is termed the RLS tradeoff. Here we review the progress to date of a SEMATECH-funded program to develop an experimentally verified model of the relationship among resolution, LER and sensitivity and use it to determine approaches for "breaking" the RLS tradeoff.
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There is a well-documented resolution-line edge/width roughness-sensitivity trade-off, wherein simultaneously optimizing the three performance parameters is a challenge.
“This is the well -documented resolution -line edge/width roughnesssensitivity trade -off 90 , wherein simultaneously optimizing the three performance parameters is a challenge.”
From Extreme ultraviolet lithography (2024) · cites this paper as [90]
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Metadata
- Authors
- Gallatin, G. M., Naulleau, P., Niakoula, D., Brainard, R., Hassanein, E., Matyi, R., Thackeray, J., Spear, K., & Dean, K.
- Affiliations
- Lawrence Berkeley National Laboratory (US)
- University at Albany, State University of New York (US)
- ROHM (JP)
- Venue
- SPIE Proceedings
- Publisher
- SPIE
- Published
- 2008-03-14
- Volume
- 6921
- Pages
- 69211E
- ISSN
- 0277-786X (ISSN-L)
- OpenAlex
- W2083672051
- Cited by
- 54
- References
- 0
- Citations by year
- 2026: 5 · 2025: 2 · 2024: 2 · 2021: 1 · 2019: 3 · 2018: 2 · 2017: 3 · 2016: 2 · 2015: 4 · 2014: 3 · 2013: 2 · 2012: 2
- FWCI
- 10.90
- Type
- conference paper
- Language
- en
- Open access
- green
- www.escholarship.org
- Locations
- Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (publishedVersion)
- eScholarship (California Digital Library) (submittedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Advanced optical system design
- Physical Sciences › Materials Science › Materials Chemistry › Block Copolymer Self-Assembly
- Keywords
- photoresist, resolution, line edge roughness, sensitivity, chemically amplified resists, lithography, SEMATECH
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